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通过对聚乙烯醇(PVA)/季铵化羟乙基乙氧基纤维素(QHECE)共混膜进行聚乙二醇(PEG)聚塑化改性, 采用物理-化学交联联用法制备了PVA/QHECE/PEG碱性阴离子交换复合膜. 通过交流(AC)阻抗、 傅里叶变换红外光谱(FTIR)、 扫描电子显微镜(SEM)、 热重分析(TGA)、 气相色谱(GC)和拉伸实验等手段考察了不同PEG添加量对膜的离子电导率、 分子结构、 微观形貌、 热稳定性、 力学强度、 甲醇渗透率和耐碱稳定性等性能. 结果表明, PEG的加入(除最小比例外)提高了膜的离子电导率和力学强度并使其柔韧性增大. 同时, 膜的热稳定性比未添加PEG时提高了40℃. 将PVA/QHECE/PEG膜在80℃, 6 mol/L KOH浓碱溶液中浸渍处理264 h, 膜的电导率从1.06×10-3 S/cm提高到3.88×10-3 S/cm, 而膜的外观和力学强度及含水率未发生明显变化, 表明该膜具有很好的耐碱化学稳定性. 此外, 以3 mol/L甲醇溶液为测试目标, 膜的甲醇渗透率<10-7 cm2/s, 仅为商业用Nafion®膜的1/20~1/40. 相似文献
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第二类变型Bessel函数Kn(z)在自变量趋于无穷时就是指数变小的,使用多项式逼近的方法求解往往误差很大.采用指数变换和J.P.Boyd的有理Chebyshev多项式计算第二类变型Bessel函数,得到了令人满意的在较大范围内有效的解. 相似文献
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采用溶胶-凝胶法在还原气氛下制备了Sr2MgSi2O7∶Eu2+,xBi3+(x=0,0.02,0.04,0.06,0.08,0.1)荧光粉,并用XRD、TG-DTA及激发与发射谱仪对样品的结构及发光性能进行了表征.结果发现:单掺杂Bi3+的Sr2MgSi2O7样品的发射光谱所用的材料的激发光谱为一主峰为286 nm的宽带谱,这是由于激发态时Bi3+的3p1→1S0电子能级跃迁而造成的;单掺杂Eu2+的Sr2MgSi2O7样品的发射光谱所用的材料的激发光谱为一主峰为358 nm的宽带谱,这是典型的Eu2+的4f65d3→4f7跃迁而引起的.当Bi3+离子掺杂到Sr2MgSi2O7∶Eu2样品的摩尔分数为0.04时,样品的发射强度是未掺杂Bi3离子样品的1.9倍. 相似文献
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本文基于计算流体力学软件FLUENT采用大涡模拟方法(LES)及Smagorinsky-lilly亚格子模型,对空冷岛扁平管外翅片空间的流动与换热特性进行了三维瞬态湍流数值模拟。计算结果表明大涡模拟方法能较好地模拟空冷岛扁平管外翅片空间的瞬态流动特性,能够捕获更多的流场细节信息。可得出流场中温度、压力、涡量等各参数的瞬态变化特性以及翅片空间尾流区瞬态三维涡的发展演化过程,更好地预测多尺度湍流。为进一步揭示扁平管温度场和流场的协同关系以及大型空冷系统多尺度输运规律和非线性尺度效应机理打下基础。 相似文献
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Chunhua An 《中国物理 B》2021,30(8):88503-088503
Layered ReS2 with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS2 are still very limited. Here, we studied the anisotropic photoresponse of layered ReS2 phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS2 transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS2 interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS2 transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light. 相似文献
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