磁场对有机电致发光的影响

制备了常规有机发光二极管ITO/NPD/Alq₃/LiF/Al，测量了该器件发光的磁场效应.发现尽管在1T范围内的磁场对发光层Alq₃的光致发光没有影响，但磁场作用下器件的电致发光(MEL)却呈现出明显的磁效应，且MEL与器件的偏压有很强的依赖关系：在小偏压时，随着磁场的增加MEL是单调递增，且在大小约为40kA/m的磁场下达到饱和，之后即使磁场增大到约1T 的情况下也没有变化；但当偏压变大时，MEL则呈现先增加，在40kA/m处达到峰值后却又减弱，而且偏压越大该MEL的减弱则越明显.对所观察到的实验结果进行了定形解释，即三线态激子相互淬灭产生单线态激子和三线态激子与器件中的非平衡载流子相互作用是此效应的物理机理. 关键词： 有机发光 磁场效应 激子淬灭     

LiF插层对有机发光二极管磁场效应的调控

制备了有LiF插层的有机发光二极管,以八羟基喹啉铝（Alq₃）作为电子传输层,N, N′-二苯基-N, N′-二(1-萘基)-1,1′-联苯-4,4′-二胺（NPB）作为空穴传输层.通过改变Alq₃与NPB间LiF插层的厚度,研究了不同温度下器件的光电特性及电致发光的磁场效应.测量结果表明:LiF插层可以影响器件内部载流子的输运和激发态的形成.较厚的插层阻碍了空穴的传输,使器件的电流效率变低.但实验中发现, 关键词： LiF插层结构 磁场效应 三重态激子     

基于Alq3的有机发光二极管的磁电导效应

制备了结构为 ITO/CuPc/NPB/Alq₃/LiF/Al 的有机发光二极管,并在300,260,220和180 K 四个温度测量了器件在恒压偏置下注入电流的磁场效应(磁电导效应).在注入电流从双极电流过渡到单极电流的过程中,随电流减小,器件的磁电导呈现先上升后下降的变化趋势.当温度降低,磁电导的值下降.但在任何测量条件下,器件的磁电导始终为正,没有出现如文献报道的磁电导从正到负的变化.实验结果表明,有机发光二极管中正负磁电导现象的产生,并非仅取决于注入电流是单极电流还是双极电流,它还与有机材料、器件结构等密切相关.利用受磁场调控的“电子-空穴对”机理与“双极化子”模型,分别解释了器件双极电流和单极电流的正磁电导效应. 关键词： 有机发光二极管 磁电导 双极化子     

室温下磁场对基于Alq3的有机电致发光器件的影响

制备了ITO/NPB/LiF/Alq₃/LiF/Al的器件,测量了该组器件效率和亮度的磁效应.结果表明,在50 mT磁场中,当LiF缓冲层厚度为0.8 nm时,器件的效率最大增加了12.4%,磁致亮度最大变化率17%.同时,制备的磷光器件ITO/NPB/LiF/CBP:6 wt% Ir(ppy)₃/BCP/Alq₃/ LiF/Al,在50mT磁场作用下,当LiF缓冲层的厚度为0.8 nm时,器件的效率最大增加12.1%.在Alq_{3 关键词： 有机发光 磁场 效率 磁致亮度}     

有机发光二极管的光致磁电导效应

制备了结构为ITO/CuPc/NPB/Alq₃/LiF/Al的常规有机发光二极管, 之后对器件采用波长为442 nm和325 nm的激光线进行照射产生激子, 并在小偏压下(保证器件没有开启)对激子的演化过程进行控制, 同时测量器件的光致磁电导(photo-induced magneto-conductance, PIMC). 实验发现, 不同于电注入产生激子的磁电导效应, PIMC在正、反小偏压下表现出明显不同的磁响应结果. 当给器件加上正向小偏压时, 器件的PIMC在0-40 mT范围内迅速上升; 随着磁场的进一步增大, 该PIMC增加缓慢, 并逐渐趋于饱和. 反向小偏压时, 器件的PIMC随着磁场也是先迅速增大(0-40 mT), 但达到最大值后却又逐渐减小. 通过分析外加磁场对器件光生载流子微观过程的影响, 采用'电子-空穴对'模型和超精细相互作用理论对正向偏压下的PIMC进行了解释; 反向偏压下因各有机层的能级关系, 为激子与电荷相互作用提供了必要条件, 运用三重态激子与电荷的反应机制可以解释PIMC出现高场下降的实验现象.     

LiF超薄层引起的OLEDs发光光谱展宽

将LiF插入到发光层Alq₃中,制备了有机电致发光器件(OLED),其器件的结构为:ITO/NPB (45 nm)/Alq₃ (x nm)/LiF (0.3 nm)/Alq₃ /Al(150 nm)。发现器件的电致发光谱(Electroluminescence spectra, EL)有非常明显的展宽现象,这为白光器件的制备提供了一条简单的途径。通过对比LiF在Alq₃中不同厚度处的发光谱,发现在x=10时谱线展宽最显著,器件最大亮度在22 V时达到8 260 cd/m²,最大效率可达 4.83 cd/A,并对其光谱展宽的机理及器件特性进行了分析。     

一种新型铕配合物的有机电致发光性能

研究了一种新型的稀土金属铕配合物EuL₁L₂的光致发光和电致发光特性。将这种铕配合物掺杂到PVK:PBD中,制备成结构为ITO/PVK:PBD:EuL₁L₂/PBD/Alq₃/Mg:Ag/Ag的器件,对其电致发光性能进行研究,发现Eu³⁺离子和Alq₃的相对发光强度随PVK:PBD:EuL₁L₂和Alq₃之间的激子阻挡层PBD的厚度变化而变化,通过调节PBD的厚度,得到了色纯度较高的红色电致发光器件,其光谱具有显著的Eu³⁺离子的光谱特征。     

同时掺杂磷光和荧光染料的白色有机电致发光器件性能研究

以磷光染料Ir(piq)₂(acac)作为发光掺杂剂,掺入空穴传输性主体材料NPB中得到红色发光层,荧光材料TBP掺入到主体CBP中作为蓝色发光层,制备了结构为ITO/NPB/NPB：Ir(piq)₂(acac)/CBP/CBP：TBPe/BCP/ALq/Mg：Ag的双发光层白色有机电致发光器件.其中ALq₃、未掺杂的NPB和CBP及BCP层分别作为电子传输层、空穴传输层和激子阻挡层.实验中通过调节发光层厚度及Ir(piq)_{2关键词： 磷光 激子阻挡层 有机电致发光}     

双量子阱结构OLED效率和电流的磁效应

通过结构为ITO/NPB(60 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(3 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(20 nm)/LiF/Al的双量子阱的黄色有机电致发光器件,研究了不同磁场强度下的发光效率和电流变化特性. 研究结果表明该器件的电流是随着磁场强度的增加而单调下降的,显示了器件的电阻是随着磁场强度的增加而增加的. 同时也得到了该结构有 关键词： 量子阱 磁场 OLED 磁效应     

蓝色有机发光材料LiBq4的合成及其发光特性

蓝色有机发光材料的开发对于实现有机发光二极管(OLED)的全彩色化具有十分重要的意义.报道了蓝色有机发光材料8-羟基喹啉硼化锂(LiBq₄)的合成及提纯,研究了LiBq₄的光致发光特性,并用LiBq₄作为发光材料制备了蓝色有机发光器件,研究了电子传输层Alq₃的厚度及空穴缓冲层CuPc对器件电流-电压和亮度-电压特性的影响.结果表明,LiBq₄的光致发光峰值波长为452nm,器件ITO/PVK:TPD/LiBq₄/Alq₃/Al的电致发光光谱峰值波长位于475nm处,在25V工作电压下其最高亮度约为430cd/m².但CuPc的加入加剧了器件中载流子的不平衡注入,导致器件性能恶化.通过调整Alq₃的厚度,同时在Alq₃和Al阴极之间加入LiF薄膜以提高电子注入效率,获得了较为理想的实验结果.     

NPB/Alq3 界面激子拆分研究

采用瞬态光电压技术研究了NPB和Alq₃界面激子拆分过程和拆分机理.对NPB和Alq₃组成双层结构的样品,在脉冲355nm激光照射下,测量样品的瞬态光电压信号,通过对不同结构的和有界面激子阻挡层的样品的瞬态光电压分析,并排除了ITO/有机外界面对激子拆分的影响,得出了NPB/ Alq₃界面激子拆分机理是向Alq₃ 注入电子,向NPB注入空穴. 关键词： 激子拆分 界面 瞬态光电压     

Photoluminescence spectroscopy study on tris(8-hydroxyquinoline) aluminum film

In situ photoluminescence spectroscopy (PL) measurements of tris(8-hydroxyquinoline) aluminum (Alq₃) film were carried out. Upon deposition of Alq₃ on the glass substrate, the PL intensity changes dramatically, while the peak position of Alq₃ emission shows a sharp red-shift from 524 nm at the initial deposition of Alq₃, and tends to a saturation value of 536 nm for the film thickness range from 2 to 500 nm. This red-shift is associated with the change from the 2D to 3D exciton state with increasing Alq₃ film thickness. Temperature dependent PL spectra of Alq₃ films showed, besides the changes in the PL intensity, clearly a blue-shift of Alq₃ emission about 9 nm for the film annealing up to 150 °C, while no any shift of Alq₃ emission was observed for the film annealing below 130 °C. Both changes in PL intensity, and especially in the peak position of Alq₃ emission were attributed to crystallization (thermal) effect of Alq₃ film upon annealing.     

Spectral studies of thin films based on poly(N-vinylcarzole) and red dopant

Organic light-emitting diodes were fabricated with a structure of indium-tin-oxide (ITO)/poly(N-vinylcarzole)(PVK):4-(dicyanom-ethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/8-tris-hydroxyquinoline aluminum (Alq₃)/lithium fluoride (LiF)/Al. The energy transfer from PVK to Alq₃ then to DCJTB and the charge trapping processes were investigated by employing the photoluminescence (PL) and electroluminescence (EL) spectra. With increasing thickness of the Alq₃ layer, the PL and EL emission from PVK were decreased gradually, which indicated that the effective energy transfer occurred from PVK to Alq₃ and then from Alq₃ to DCJTB. At the same time, we found that the exciton recombination zone could be adjusted by controlling the Alq₃ layer thickness and the applied voltages. The effects of different DCJTB concentrations on the optical and electrical characteristics of the devices were investigated, and an obvious red-shift was observed with the DCJTB dopant concentrations increasing in the PL and EL spectra.     

Transport and recombination in organic light-emitting diodes studied by electrically detected magnetic resonance

We have used electrically detected magnetic resonance (EDMR) to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline (Alq₃). These devices were designed to identify the microscopic origin of different spin-dependent processes, i.e. hopping and exciton formation. The EDMR signal in organic light-emitting diodes (OLEDs) based on Alq₃ is only observed when the device is electroluminescent and is assigned to spin-dependent exciton formation. It can be decomposed in at least two Gaussians: one with peak-to-peak line ( ΔH_PP) of 1.6 mT and another with ΔH_PP of 2.0 to 3.4 mT, depending on bias and temperature. The g-factors of the two components are barely distinguishable and close to 2.003. The broad line is attributed to the resonance in Alq₃ anions, while the other line is attributed to cationic states. These attributions are supported by line shape and its electrical-field dependence of unipolar Alq₃-based diodes, where hopping process related to dication and dianion formation is observed. In these unipolar devices, it is shown that the signal coming from spin-dependent hopping occurs close to organic semiconductor/metal interfaces. The sign of the magnetic-resonance-induced conductivity change is dominated by charge injection rather than charge mobility. Our results indicate that the probability of singlet exciton formation in our OLEDs is smaller than 25%.     

有机量子阱的光学性质

采用多源有机分子气相沉积系统(OMBD)制备了Alq₃，PBD/Alq₃，PBD/Alq₃/PBD单层、双层以及量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型和样品的光致发光特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/Alq₃有机量子阱为Ⅰ型量子阱结构.荧光光谱的研究结果表明，单层Alq₃的光致发光峰不随Alq₃厚度变化而变化；但是双层PBD/Alq₃结构光致发光峰随Alq₃厚度的减小而发生蓝移；同样对于PBD/Alq₃/PBD量子阱结构光致发光峰随Alq₃厚度的减小而发生蓝移.对引起光谱蓝移的原因进行了讨论. 关键词： 有机量子阱 光谱蓝移     

Improving the current efficiency of organic light-emitting device utilizing the well structure

We have demonstrated efficient organic electroluminescent (EL) devices with well Structure as the emitting layer. The well structure fabricated by alternating deposition of constituent tris-(8-hydroxyquinoline) aluminum (Alq₃) and 4,4-N,N-dicarbazole-biphenyl (CBP) layers improved the current efficiency. The enhanced efficiency can be attributed to the strong accumulation of electrons and holes in the thin Alq₃ layer, which leads to an increase of the exciton formation and exciton recombination probability. The single well device exhibits the highest current efficiency of 4.1 cd/A,which is more than twice than that of the conventional heterostructure device. It is an effective and simple way to improve the efficiency of EL devices by utilizing well structure as the emitting layer with proper well number.     

Blocking of interfacial diffusion at Ag/Alq3 by LiF

X-ray photoelectron spectroscopy has been applied to interface studies of Ag/tris-(8-hydroxyquinoline) aluminum (Alq₃) and Ag/LiF/Alq₃. For Ag/Alq₃, diffusion of Ag atoms into the Alq₃ layer occurs immediately after the adhesion of the metal onto the organic layer and the process lasts several hours. Insertion of a monolayer-thick LiF buffer at the interface can effectively block the diffusion process. This is quite different from what is observed from Al/LiF/Alq₃, where Al penetrates into the LiF layer as deep as several nanometers. It is thus concluded that the LiF buffer may play different roles in Ag/LiF/Alq₃ and Al/LiF/Alq₃ and hence different mechanisms may dominate in the two cases for the enhanced carrier injection observed.