| LiF超薄层引起的OLEDs发光光谱展宽 |
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| 引用本文： | 肖静,邓振波,谭静芳,杨兆华.LiF超薄层引起的OLEDs发光光谱展宽[J].发光学报,2012,33(1):72-76. |
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| 作者姓名： | 肖静 邓振波 谭静芳 杨兆华 |
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| 作者单位： | 1. 泰山学院 物理与电子工程学院, 山东 泰安 271021;
2. 北京交通大学 光电子技术研究所, 北京 100044 |
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| 基金项目： | 山东省自然科学基金(ZR2010 FQ006); 山东省科技计划项目(J08LI65); 泰山学院科学基金(Y07-2-03)资助项目 |
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| 摘 要： | 将LiF插入到发光层Alq3中,制备了有机电致发光器件(OLED),其器件的结构为:ITO/NPB (45 nm)/Alq3 (x nm)/LiF (0.3 nm)/Alq3 /Al(150 nm)。发现器件的电致发光谱(Electroluminescence spectra, EL)有非常明显的展宽现象,这为白光器件的制备提供了一条简单的途径。通过对比LiF在Alq3中不同厚度处的发光谱,发现在x=10时谱线展宽最显著,器件最大亮度在22 V时达到8 260 cd/m2,最大效率可达 4.83 cd/A,并对其光谱展宽的机理及器件特性进行了分析。
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| 关 键 词： | 有机电致发光器件 光谱展宽 LiF 激子 |
| 收稿时间： | 2011-06-23 |
| 修稿时间： | 2011-11-15 |
A Novel Spectrum Expanding Phenomenon Based on Inserting LiF Layer in Emitting Layer in OLEDs |
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| XIAO Jing,DENG Zhen-bo,TAN Jing-fang,YANG Zhao-hua.A Novel Spectrum Expanding Phenomenon Based on Inserting LiF Layer in Emitting Layer in OLEDs[J].Chinese Journal of Luminescence,2012,33(1):72-76. |
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| Authors: | XIAO Jing DENG Zhen-bo TAN Jing-fang YANG Zhao-hua |
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| Institution: | 1. Physics and Electronic Engineering College, Taishan University, Tai'an 271021, China;
2. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | A novel organic electroluminescent device was fabricated by interposing a thin LiF layer in Alq3 layer in this work. The structure of the device is ITO/NPB (45 nm)/Alq3 (x nm)/LiF (0.3 nm)/Alq3 /Al (150 nm). All the devices (x=5, 10, 15) showed expanded EL spectra, and the spectrum expanding is more obvious in the device with x=10 than the others. The highest brightness of this device reached 8 260 cd/m2 at a fixed bias of 22 V. The spectra contain tricolor, so this is a simple method to realize white light emitting. We also elucidated the mechanism for expanded EL spectra and investigated the properties of these devices. |
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| Keywords: | organic electroluminescent device spectrum expanding LiF excitons |
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