硫化砷非晶态波导光阻断效应的机理研究

在实验研究了As₂S₈和掺杂As₂S₈薄膜波导光阻断效应的基础上,讨论了反常电子组态的形成机理和转移机理,提出了光阻断效应切断过程和回复过程的动力学模型,数值分析结果与实验数据十分符合,理论预期与实验现象一致,表明该模型抓住了光阻断效应的基本特征,揭示了过程本质,反映了实验现象的内在机理. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 动力学模型     

掺锡As2S8薄膜光折变效应及其在条波导制备中的应用研究

实验研究了Sn₁As₂₀S₇₉非晶态半导体薄膜的光折变效应及其膜厚变化的现象,归纳了沉积态样品、退火态样品和光饱和态样品的实验规律,提出和采用紫外光激励的方法试制了Sn₁As₂₀S₇₉条形波导,632.8 nm波长导模激励显示该波导具有良好的导波特性. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 光折变效应     

掺杂As2S8非晶态薄膜波导的光阻断效应

实验研究了未掺杂和低浓度掺锡和掺磷的As₂S₈薄膜波导的光阻断效应,提供了三种样品的光阻断响应曲线、室温退激实验数据和光谱测试数据. 结果表明,掺锡样品可以明显提升毫秒级响应的快过程恢复作用,同时还具有减少残留传输损耗的效果,掺磷的效果则相反. 结合实验结果给出了分析讨论. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 掺杂     

基于AZ5214光致保护层的As2S3硫系脊型波导制备

实验研究发现AZ5214光刻胶在一定曝光剂量下显影后会留存一定厚度的底膜，该底膜可以在干法刻蚀过程中避免As-S薄膜与碱性显影液直接接触，减轻薄膜表面损伤，起到保护作用。基于此，采用该底膜作为保护层制备As₂S₃脊型波导，研究结果表明，在AZ5214光刻胶匀胶厚度为2.1μm、紫外曝光剂量为200 mJ/cm²、显影时间为45 s的条件下会留存约为220 nm厚的光致保护层，该条件下保护层均匀性较好，且在刻蚀阶段可以完全去除。实验表明利用此保护层制备的As₂S₃脊型波导具有良好的形貌特征，波导脊宽约为3μm、脊高约为800 nm的As₂S₃脊型波导的传输损耗约为0.74 dB/cm@1 550 nm。     

光折变法制备的As2S8条形波导的光阻断效应

实验研究了As2S8薄膜光折变现象.提出并采用紫外光激励的方法试制了As2S8条形波导,导模激励显示该波导具有良好的导波特性.在此基础上,考察了As2S8条波导的光阻断效应,实现了光-光效应的开关功能.     

硫系非晶半导体薄膜中的超快光 Kerr效应

利用飞秒激光超外差光Kerr(OHD-OKE)技术研究了As₂S₃, As₂Se₃, GeS₂, GeSe₂, Ge₂₀As₂₅S₅₅, Ge₂₀As₂₅Se₅₅, Ge₁₀As₄₀S_{20关键词： 全光开关 硫系非晶半导体薄膜 飞秒激光超外差光Kerr(OHD-OKE) 三阶非线性}     

LaF3∶Er,Yb纳米颗粒掺杂有机/无机杂化材料制备光波导放大器及特性研究

采用LaF₃∶Er,Yb纳米颗粒掺杂有机/无机杂化材料作为有源材料,制备了掩埋条形结构光波导放大器,研究了放大器在室温下的增益特性和波导中的频率上转换现象. 当抽运功率60 mW时,波导中明显可见绿色上转换发光,观测到Er³⁺从²H_9/2,²H_11/2,⁴S_3/2,⁴F_9/2到基态⁴I_15/2跃迁分别对应的4个波长分别为405?nm, 520?nm, 544?nm和650?nm的发射峰,分析了其产生机理. 当输入信号光06?mW,抽运功率160 mW时,在1535?nm波长处获得15 dB/cm的相对增益. 关键词： 光波导放大器 增益 上转换     

带空气狭缝倒置结构的脊型硫系光波导后向受激布里渊散射研究

受激布里渊散射效应具有光谱线宽窄、频率稳定和增益方向敏感等优点,常用于激光器,慢光产生和微波光子滤波器等.本文基于As₂S₃硫系玻璃、以SiO₂为衬底设计了一种亚微米尺寸的带空气狭缝倒置结构脊型波导结构,具有高达8.22×10⁴ W^–1·m^–1的后向受激布里渊散射增益系数.研究显示在该结构的同种光学和声学模式下,更小的声光场有效模场面积具有更高的后向受激布里渊散射增益系数.还分析了硫系玻璃的光学损耗对后向受激布里渊散射的影响,发现当波导长度超过最优值后,斯托克斯光波功率开始下降,而增大泵浦光功率不仅可以提高斯托克斯光波功率的极大值,同时还会增大波导长度的最优值.当所输入的泵浦光功率为20 mW时,受激布里渊散射增益达到100 d B波导长度仅需要2 cm,这非常有利于光子器件的片上集成.     

SiO2脊形条波导热极化引起的电光效应

通过理论模拟对具有上覆盖层的SiO₂脊形条波导结构进行了优化，在此基础上利用微电子工艺制作了SiO₂脊形波导Mach-Zehnder型电光调制器，并进行热极化引起的电光和非线性效应的研究.热极化过程大幅增强了样品的电光及非线性效应，二次电光系数由热极化前的1.56×10^-22(m/V)²提高到热极化后的8.50×10^-22(m/V)²，极化后得到了0.093pm/V的线性电光系数，对热极化的物理机理进行了理论分析. 关键词： 电光调制器 2光波导')" href="#">SiO₂光波导 电光效应 热极化     

Tm3+掺杂SrAl2O4:Eu2+的光激励和热释光性能

通过高温固相法制备出Sr_{0.98-xAl2O4:0.02Eu²⁺,xTm³⁺(x=0,0.01,0.02,0.03,0.04,0.05)系列样品,并对其光激励和热释光性能进行了研究。在SrAl2O4:Eu²⁺原有陷阱能级结构的基础上,通过Tm³⁺的掺杂引入了更深的陷阱TB,并增加原有陷阱TA浓度,进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm³⁺掺杂量的变化规律,证实陷阱TB为光激励发光提供了有效俘获中心。当Tm³⁺的掺杂摩尔分数x=0.03时,材料中的陷阱TB的浓度达到最高值,同时光激励发光强度最大。对比Tm³⁺共掺前后热释光图谱,通过Chen's半宽法计算出了引入陷阱TB的陷阱深度。实验结果证实材料中TB的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下,由深陷阱TB释放出来的电子可以再次被浅陷阱TA俘获,这种浅陷阱TA的再俘获效应在光激励发光过程中表现为光激励余辉现象。}     

Studies on electrodeposited As2S3 thin films by double exposure holographic interferometry technique

Arsenic trisulphide (As₂S₃) thin films have been deposited onto stainless steel and fluorine doped tin oxide (FTO) coated glass substrates by electrodeposition technique using arsenic trioxide (As₂O₃) and sodium thiosulphate (Na₂S₂O₃) as precursors and ethylene diamine tetracetic acid (EDTA) as a complexing agent. Double exposure holographic interferometry (DEHI) technique was used to determine the thickness and stress of As₂S₃ thin films. It was observed that the thickness of the thin film increases whereas film stress to the substrate decreases with an increase in the deposition time. X-ray diffraction and water contact angle measurements showed polycrystalline and hydrophilic surface respectively. The bandgap energy increases from 1.82 to 2.45 eV with decrease in the film thickness from 2.2148 to 0.9492 μm.     

Hydrostatic pressure study of the structural phase transitions and superconductivity in single crystals of (Ba1−xKx)Fe2As2 (x=0 and 0.45) and CaFe2As2

We studied the effect of hydrostatic pressure (P) on the structural phase transitions and superconductivity in the ternary and pseudo-ternary iron arsenides CaFe₂As₂, BaFe₂As₂, and (Ba_0.55K_0.45)Fe₂As₂, by means of measurements of electrical resistivity (ρ) in the 1.8-300 K temperature (T) range, pressures up to 20 kbar, and magnetic fields up to 9 T. CaFe₂As₂ and BaFe₂As₂ (lightly doped with Sn) display structural phase transitions near 170 and 85 K, respectively, and do not exhibit superconductivity in ambient pressure, while K-doped (Ba_0.55K_0.45)Fe₂As₂ is superconducting for T<30 K. The effect of pressure on BaFe₂As₂ is to shift the onset of the crystallographic transformation down in temperature at the rate of ~−1.04 K/kbar, while shifting the whole ρ(T) curves downward, whereas its effect on superconducting (Ba_0.55K_0.45)Fe₂As₂ is to shift the onset of superconductivity to lower temperatures at the rate of ~−0.21 K/kbar. The effect of pressure on CaFe₂As₂ is first to suppress the crystallographic transformation and induce superconductivity with onset near 12 K very rapidly, i.e., for P<5 kbar. However, higher pressures bring about another phase transformation characterized by reduced-resistivity, and the suppression of superconductivity, confining superconductivity to a narrow pressure dome centered near 5 kbar. Upper critical field (H_c2) data in (Ba_0.55K_0.45)Fe₂As₂ and CaFe₂As₂ are discussed.     

Acoustooptic extension of the frequency tunability of CW CO2 lasers: New FIR lasers emissions from CH3OH and13CH3OH

We have increased the frequency tunability of our CW waveguide CO₂ lasers by means of an acoustooptic amplitude modulator, operating at the fixed frequency of 90 MHz. The up-shifted, or down-shifted, laser optical sideband can be generated independently by adjusting the orientation of the modulator. The efficiency is larger than 50%. The frequency tunability of the CO₂ laser around each laser line is thus increased by 180 MHz. To demonstrate the possibilities of this method, a source composed of the above modulator and of a CW, 300 MHz tunable waveguide CO₂ laser has been used for the search of new large offset FIR laser lines from optically pumped CH₃OH and¹³CH₃OH molecules. As a result 15 and 10 new large offset laser lines were discovered respectively. New assignments of some laser lines are also proposed. We have also measured the Stark effect, the offset, and the polarization of other already known lines. In particular a Stark effect frequency tuning of about 1 GHz is demonstrated for a laser line at 208.399 m.     

Variational analysis of Er:Ti:LiNbO3 waveguide lasers based on Gaussian/two-half Gaussian mode field distribution

Starting with two dimensional, scalar wave equation, a variational equation was established for the fundamental TE and TM modes guided in Ti:LiNbO₃ waveguides on the basis of assuming a symmetric Gaussian mode field function in the width direction and two-half Gaussian trial functions in the depth direction. The controllable waveguide fabrication parameters, including channel width, diffusion temperature, initial Ti-strip thickness and diffusion time, dependent of fundamental mode size, effective pump area, coupling efficiency between pump and laser modes, and the coupling loss between a Ti:LiNbO₃ waveguide and a fiber were numerically calculated for Z-cut Er:Ti:LiNbO₃ channel waveguide lasers at three possible emission wavelengths 1532,1563 and 1576 nm and two possible pump wavelengths 1480 and 980 nm. The calculated results were compared with those of Gaussian/Hermite–Gaussian mode field distribution in detail.     

Photo-synthesis of As3S2 crystal from AsAs2S2 mixture

Existence of As₃S₂ compound which is stable in a certain temperature range higher than room temperature has been confirmed in AsAs₂S₂ system. Photo-synthesis effect of As₃S₂ crystal from As and As₂S₂ mixture, namely light induced conversion from a crystalline state to another crystalline state, has also been investigated.     

Electronic band structure and Fermi surface of new low-temperature Ni-based superconductors: 3.3 K (Ni2P2)(Sr4Sc2O6) and 2.7 K (Ni2As2)(Sr4Sc2O6) from first principles

Based on first-principle FLAPW-GGA calculations, we have investigated structural and electronic properties of the recently synthesized tetragonal (space group P4/nmm) nickel-based pnictide oxide superconductors: 3.3 K (Ni₂P₂)(Sr₄Sc₂O₆) and 2.7 K (Ni₂As₂)(Sr₄Sc₂O₆). Optimized structural data, electronic bands, total and partial densities of states, and Fermi surface topology have been obtained and discussed in comparison with available experiments and with their Fe-based (Fe₂P₂)(Sr₄Sc₂O₆) and (Fe₂As₂)(Sr₄Sc₂O₆) analogs.     

Tunable electrooptically Q-switched RF excited CO2 waveguide laser with two channels

A tunable electrooptically Q-switched RF excited waveguide CO₂ laser with two channels is presented. Q-switched pulses have been obtained from one of the channels. The peak power is 300 W and the pulse width is 140 ns. CW laser output has been obtained from the other channel, which can been tuned by a PZT. The short-term heterodyne stability can be up to 10⁻⁹.     

The molecular structure and the analytical potential energy function of S2^- and S3^-

In this paper, the equilibrium geometry, harmonic frequency and dissociation energy of S2^- and S3^- have been calculated at QCISD/6-311＋＋G（3d2f） and B3P86/6-311＋＋G（3d2f） level. The S2^- ground state is of 2IIg, the S3^- ground state is of 2B1 and S3^- has a bent （C2v） structure with an angle of 115.65° The results are in good agreement with these reported in other literature. For S3^- ion, the vibration frequencies and the force constants have also been calculated. Base on the general principles of microscopic reversibility, the dissociation limits has been deduced. The Murrell-Sorbie potential energy function for S2^- has been derived according to the ab initio data through the least- squares fitting. The force constants and spectroscopic data for S2^- have been calculated, then compared with other theoretical data. The analytical potential energy function of S3^- have been obtained based on the many-body expansion theory. The structure and energy can correctly reappear on the potential surface.