Use of thermal annealing for radiation hardening of germanium to γ-rays

Thermal annealing for extended periods (20-1000 hours) at moderately low temperatures (500–675°C) is shown to produce significant hardening to the γ-radiation induced E_V + 0.23 eV and E_V + 0.38 eV levels in Ge crystals grown by the Czochralski technique from silica crucibles. Annealed samples showed concentrations of these levels between 33–58% of those in untreated control samples, as measured by deep level transient spectroscopy. In some samples, heating to 500°C for 1 hour produced the same effect.     

Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes

Negative photoconductivity (NPC) was observed in n-ZnO/p-Si heterojunction diode grown by ultra-high vacuum sputtering method under nitrogen ambient. Under the illumination of ultra-violet light, positive photoconductivity was observed at low bias voltages, whereas NPC was observed at high bias voltages. The defect states in the ZnO layers grown on Si were analyzed by photoluminescence and deep level transient spectroscopy measurements. Two deep levels were measured at E_c-0.51 eV and E_c-0.54 eV, which might be originated from oxygen vacancy and nitrogen atom related defects, respectively. Based on the simulation of band diagram, the defect states were located below Fermi level at zero bias voltage. However, as increasing the bias voltages, NPC was observed due to the increase of empty defect states. This analysis allowed us to consider the possibility that the NPC phenomenon in n-ZnO/p-Si heterojunction diode is originated dominantly from the defect states as a carrier recombination center in ZnO layer.     

Transition metal impurities in silicon: New defect reactions

Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE _c-0.35 eV andE _c-0.57 eV to the Pd-related defect atE _c –0.22 eV is observed, and a Pd-Fe complex level atE _c –0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE _c-0.33 eV andE _c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE _v+0.32eV andE _v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE _v + 0.35 eV andE _v+0.48 eV.     

Boron-related deep centers in 6H-SiC

6H-silicon carbide layers are grown by a liquid phase epitaxy (LPE) process. The layers are doped with boron either by ion implantation or during the LPE process from a B-doped silicon melt. Deep-level transient spectroscopy (DLTS), admittance spectroscopy and photoluminescence (PL) are used to investigate deep impurity centers. Two electrically active defect centers are detected: the isolated boron acceptor at E _B=E _v+0.3eV and the boron-related D-center at E _D=E _v+0.58eV. The yellow luminescence observed in these layers is proposed to be due to pair recombination via D-center and nitrogen donor. Formation and origin of the D-center are discussed.     

The defects produced by electron irradiation in tellurium-doped germanium

Abstract

The nature of the irradiation induced defects in germanium single crystal doped with tellurium was studied by DLTS and electrical measurements.

The E_c-0.21 eV level produced by irradiation with 1.5 MeV electrons was studied by DLTS technique. It was found that the defect associated with the E_c-0.21 eV level is divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the E_c-0.20 eV level in samples doped with group V impurity. The level introduced by tellurium (group VI impurity)-vacancy pair is located at deeper than E_c-0.21 eV.

The E_c-0.16 eV level was generated by the annealing at 430 K. A model for the defect associated with the level is proposed to be a tellurium-vacancies complex.     

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E_c—0.046 eV, E_c—0.186 eV, E_c—0.314 eV. E_c—0.528 eV and E_c—0.605 eV) were detected. The metastable defect E_c—0.046 eV having a trap signature similar to E1 is observed for the first time. E_c—0.314 eV and E_c—0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.     

Electrophysical properties of InSb irradiated by electrons at 300 K

Results of a comparative investigation of InSb crystals irradiated by electrons (1 MeV, 300 K), doped metallurgically (Te, Zn) and by nuclear transformation (Sn), are presented. It is found that as a result of irradiation the Fermi level shifts to a position near (E_c - 0.03) eV (at 77 K), independently of the material type. Subsequent annealing of the irradiated crystals revealed an n-p-n-p conductivity-type conversion in weakly doped n-InSb and an n-p conversion in strongly doped n-InSb.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 99–103, July, 1991.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

电子辐照硅层中缺陷能级的研究

用12MeV电子辐照硅p⁺n结,在硅中除引入氧空位E₁(E_c-0.19eV),双空位E₂(E_c-0.24eV)和E₄(E_c-0.44eV)外,还引入缺陷E₃(E_c-0.37eV)。用DLTS方法和反向恢复时间测量研究了这些能级的退火行为,可以看到,E₃的退火温度最高(≈520℃)。由退火特 关键词：     

Analysis of 1 MeV electron irradiation-induced performance degradation in the germanium bottom cell of triple-junction solar cells using temperature-dependent photoluminescence measurements

Abstract

Temperature-dependent photoluminescence spectra of the germanium bottom cell of triple-junction solar cells unirradiated and irradiated with 1?MeV electrons were measured in the 10–300?K temperature range. In unirradiated germanium bottom cell, the spectra show that the PL intensity increases with temperature but slightly decreases at around 250?K because of the intrinsic defect. However, in irradiated germanium bottom cell, the spectra show that there are two negative thermal quenching processes (10–90?K and 200–270?K) and two usual thermal quenching processes (90–200?K and 270–300?K) as a result of the radiation-induced defects E_c ? 0.37?eV and E_c ? 0.12?eV.     

中子辐照含氢硅中的与氢有关的深能级缺陷

利用深能级瞬态谱(简称DLTS),恒温下瞬态电容技术及红外吸收光谱,研究了中子辐照氢气氛中生长的n型区熔硅。相应于间隙氢的红外吸收谱带中子辐照后强度减弱。首次观察到未经退火就出现了能级为E_c=0.20eV的一个新的缺陷——Z中心,由于该中心的能级很接近于A中心,而浓度又较A中心低得多,通过改变中子剂量使费密能级处于A中心以下几个kT处,才能精确地测定Z中心的DLTS峰所在的温度。根据实验判断Z中心很可能是氢与空位的复合物,讨论了它的可能电子结构。 关键词：     

Energy levels of interstitial manganese in silicon

Interstitial manganese in silicon can exist in four charge states which imply single acceptor and double donor behaviour. The corresponding level scheme with the acceptor level ($\text{Mn}{}^{\mathrm{<mtext>?</mtext><mtext>0</mtext>}}$) at E_c-0.13eV, the first donor level ($\text{Mn}{}^{\mathrm{<mtext>0</mtext><mtext>+</mtext>}}$) at E_c?0.45eV and the second donor level (Mn^+/++) at E_v+0.30eV is established through EPR-controlled Hall measurements. Another deep donor level at E_c?0.54eV is produced by the donor acceptor pair (MnB) whereas a more shallow one around E_c-0.28eV was already attributed to a Mn₄-cluster.     

Electromagnetic decay of fragmented analogue states in 45Sc

The ⁴⁴Ca(p, γ) reaction was studied for 45 resonances for E_p = 1.6?2.2 MeV. The overall proton energy resolution was 300–350 eV; the γ-rays were detected with both NaI(T1) and Ge(Li) detectors. Partial and total γ-ray widths were measured for each of the fine structure states of the $\text{3}\text{2}{}^{\mathrm{?}}$ and $\text{1}\text{2}{}^{\mathrm{?}}$ analogue states at E_p = 1.65 and 2.04 MeV, respectively. The data are examined for correlations between the partial widths (Γ_p, Γ_p′, Γ_γi, Γ_γ^total) in different channels. The γ-ray intensities are compared with (τ, d) spectroscopic factors.     

Examination of optical properties and estimation of mechanical energies of irradiated polypropylene and teflon

The optical absorption and mechanical yielding energy has been studied under exposure of γ-radiation. Two crystalline polymers, polypropylene (PP) and Teflon, were irradiated with a ⁶⁰Co source, with doses ranging up to 6 kGy. The observed optical energy gap (E _opt) and energy gap tail (Δ E) for irradiated thin sheets of PP were determined from the measured absorption spectra. The average values of (E _opt) and (Δ E) were 5.85 and 0.5 eV, respectively. There is no detectable change in the optical energy gap under the applied γ-ray doses. On the other hand, the effect of γ-radiation on mechanical properties of irradiated Teflon was much pronounced. It was found that Young’s modulus and yield stress increase with radiation dose, whereas the yield strain decreases. The calculated yield energy increases with radiation dose from 0.27 to 0.35 Mpa per unit volume. The enhancement in the mechanical properties of irradiated Teflon was attributed mainly to crosslinking process and other structural changes occuring during irradiation with γ-rays.     

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E _c −0.65eV andE _c −0.74eV) and one grown-in hole trap level (E _v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E _c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.     

Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon

Abstract

Hydrostatic pressure has been used as a variable to investigate the E_c-0.164 eV acceptor level for the oxygen-vacancy (O—V) defect in γ-ray irradiated Si, and the annealing/formation of oxygen-related defects in neutron-irradiated Si. The acceptor level is found by deep level transient spectroscopy to move closer to the conduction band and away from the valence band at rates of 3.9 meV/kbar and 2.4 meV/kbar, respectively, i.e., the level moves higher in the gap. There is also a relatively large inward (outward) breathing mode lattice relaxation (4.6±1.2 ų/electron) accompanying electron emission (capture) from this level. Both results reflect the antibonding nature of the level and are qualitatively consistent with the Watkins—Corbett model for the O—V defect. The annealing rate was found by infrared absorption to increase with pressure for the O—V defect at 350°C with a derived activation volume of ?4.5 ų/defect, where the negative sign implies inward relaxation (contraction) on annealing. Pressure has relatively little effect on annealing of the C—Si—O C(3) defect which is interstitial in nature, but strongly favors the formation of the dioxygen (2 oxygen atoms per vacancy, i.e., O₂—V) defect. The intensity of the O₂—V band after annealing at 20 kbar is 5 times higher than that following similar annealing at 0 kbar. Additionally, this intensity at 20 kbar is higher than that achievable by any isochronal or isothermal annealing steps at 0 kbar. These annealing/formation results are discussed qualitatively in terms of models for the various defects.     

对40Ca9.5—10.5MeV能区内几组核能级宽度的测量

本文介绍了用γ共振吸收法测量⁴⁰Ca 9603.9keV,10321.0keV两组能级和9864.6,9868.8keV一组双重态能级的能级宽度,选用³⁹K(p,γ)反应所放出的γ射线激发相应的⁴⁰Ca吸收核能级。对于9603.9keV,10321.0keV的能级宽度,这里给出了比较精确的结果,相应的能级宽度分别为Γ=188±47eV,Γ=91±15eV。对于9864.6,9868.8keV能级,结果为Γ=100±24eV,Γ=899±214eV,由于⁴⁰Ca 9864.6,9868.8keV两能级靠得很近,因此这里用γ共振吸收法测量它们的能级宽度与以往有所不同,将同时有两组γ射线用来激发同样两个能级而发生交叉激发。我们对相应的实验处理方法作了推广。此外,用(p,γ)共振产额法测量了⁴⁰Ca 9603.9keV,10321.0keV能级宽度,得到了与γ共振吸收法一致的结果。本文还对⁴⁰Ca 9603.9keV,10321.0keV能级的(p,γ)共振强度S_pγ、同位旋T等进行了讨论。 关键词：     

等离子体氧轰击硅生成缺陷的研究

本文对等离子体氧轰击硅产生的缺陷进行了研究。发现等离子体氧轰击在硅中引入两个缺陷E₁(E_c—0.46eV)及E₂(E_c—0.04eV)。测量了缺陷的光电离截面谱,分析表明,缺陷E₂的电子声子相互作用很强,其Frank-Condon移动达0.76eV,缺陷E₁的电子声子相互作用较小,其Frank-Condon移动为0.04eV。由实验结果得到与缺陷E₁、E₂相耦合的声子模分别为hω_p⁽¹⁾=28meV,hω_p⁽²⁾=20meV。 关键词：     

An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states?

We discuss DLTS andC-V measurements on Al/Si₃N₄/Si(2nm)/n-GaAs (≈ 5×10¹⁷ cm^?3) structures. Three discrete deep traps superimposed on a U-shaped interface-state continuum have been identified, with respective thermal energies:E _c?0.53 eV,E _c?0.64 eV, andE _v+0.69 eV. The second one (0.64 eV) is presented as an electric field sensitive level, its enhanced phonon-assisted emission resulting in a rapid shift of the corresponding DLTS peak to lower temperatures, as the applied (negative) reverse bias voltage increases. An interpretation through emission from the quantum well, introduced by means of the intermediate ultrathin Si layer, has failed.     

用低能弱γ源测量电子对的近阈产生截面

用2.7μCi的⁶⁰Co弱γ源和NaI(Tl)与Ge(Li)双探测器符合测量方法,测量了Al,Zn,Sn,Pb四种样品的电子对产生绝对截面。测量结果与前人用很强γ源得到的结果相符合,并验证了在近阈条件下,对产生截面满足Jaeger关系式:σ_pair=(Z²+aZ⁴)σ₀,求得对⁶⁰Co源γ光子,α=(1.51±0.23)×10^-4,σ_{0关键词：}