| 电子辐照硅层中缺陷能级的研究 |
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| 引用本文： | 吴凤美,赖启基,沈波,周国泉.电子辐照硅层中缺陷能级的研究[J].物理学报,1986,35(5):638-642. |
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| 作者姓名： | 吴凤美 赖启基 沈波 周国泉 |
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| 作者单位： | 南京大学物理系 |
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| 摘 要： | 用12MeV电子辐照硅p+n结,在硅中除引入氧空位E1(Ec-0.19eV),双空位E2(Ec-0.24eV)和E4(Ec-0.44eV)外,还引入缺陷E3(Ec-0.37eV)。用DLTS方法和反向恢复时间测量研究了这些能级的退火行为,可以看到,E3的退火温度最高(≈520℃)。由退火特
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| 收稿时间： | 7/1/1985 12:00:00 AM |
A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS |
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| WU FENG-MEI,LAI QI-JI,SHEN BO and ZHOU GUO-QUAN.A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS[J].Acta Physica Sinica,1986,35(5):638-642. |
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| Authors: | WU FENG-MEI LAI QI-JI SHEN BO and ZHOU GUO-QUAN |
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| Abstract: | The experiments were done using p+u junction irradiated with 12MeV electron. Pour electron traps were observed in Si layers: A-center E1(Ec -0.19 eV), the divaeancy E2 (Ec -0.24 eV), and E4 (Ec -0.44 eV), and E3 defect level (Ec- 0.37eV). Using DLTS method in conjuntion with the reverse recovery technique, annealing behavior of E1, E4 and E3 traps have been studied. The annealing temperature of the E3 defect is the highest (≈520℃). We get an activation energy for thermal annealing of 1.71 eV with a frequency factor of ～1.5×109s-1. The E3 and E4 defect levels are the principal recombination center that controls lifetime of minorities following irradiation. As the E2 and E4 defect level annealout, however, defect level E3 becomes the dominant recombination center. |
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