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等离子体氧轰击硅生成缺陷的研究
引用本文:王放平,徐建国,孙恒慧.等离子体氧轰击硅生成缺陷的研究[J].物理学报,1987,36(5):646-650.
作者姓名:王放平  徐建国  孙恒慧
作者单位:复旦大学物理系
摘    要:本文对等离子体氧轰击硅产生的缺陷进行了研究。发现等离子体氧轰击在硅中引入两个缺陷E1(Ec—0.46eV)及E2(Ec—0.04eV)。测量了缺陷的光电离截面谱,分析表明,缺陷E2的电子声子相互作用很强,其Frank-Condon移动达0.76eV,缺陷E1的电子声子相互作用较小,其Frank-Condon移动为0.04eV。由实验结果得到与缺陷E1、E2相耦合的声子模分别为hωp(1)=28meV,hωp(2)=20meV。 关键词

收稿时间:1986-05-12

STUDY OF THE DEFECTS IN OXYGEN PLASMA IRRADIATED n/n+ Si
WANG FANG-PING,XU JIAN-GUO and SUN HENG-HUI.STUDY OF THE DEFECTS IN OXYGEN PLASMA IRRADIATED n/n+ Si[J].Acta Physica Sinica,1987,36(5):646-650.
Authors:WANG FANG-PING  XU JIAN-GUO and SUN HENG-HUI
Abstract:The defects in oxygen plasma irradiated Si have been studied. It is found that two kinds of defects E1(Ec-0.46 eV) and E2 (Ec-0.04 eV) are generated in the sample. The deep level optical spectroscopy reveals that defects E2 has a strong electron-phonon coupling, its Frank-Condon shift is 0.76 eV. For E1, the coupling is weaker, its Frank-Condon shift is 0.04 eV. The analysis shows that the phonon modes coupling to defects E1 and E2 is 28.7 meV and 20 meV respectively.
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