蒙特卡罗哈密顿新方案及其检验

蒙特卡罗哈密顿方法(MCH)是研究量子理论的数值模拟新方法, 其优点是可求出超出基态的能谱和波函数. 旧MCH方案需要自由粒子的信息, 较难推广应用于格点规范理论. 本文提出克服这个困难的新方案. 首先介绍这一方案的思想, 并以1维量子力学模型V(x)=μ²x²+λx⁴(其中μ²< 0,λ>0)为例说明实现这一新方案的具体计算步骤和方法.     

固定边矩形板的弯曲问题

The problem of bending of orthotropic rectangular plates with clamped edges on elastic foundation may be reduced to the following differential equation and boundary conditions (?⁴w)/(?x⁴)+2λ(?⁴w)/(?x²?y²)+(?⁴w)/(?y⁴)+kw=q/D. w=0, (?w)/(?x)=0 at x=±a, w=0, (?w)/(?y)=0, at y=±b. In the case of isotropic plates, λ = 1. In this paper a perturbation method is proposed for the solution of this problem fay expanding w in power series of λ: w=w₀+w₁λ+w₂λ²+……. It is proved that this series is convergent when -1 ≤λ≤1.     

Magnetic and electrical properties of Mg1−x CuxO solid solutions and magnetic shielding in Cu-Mg1−x CuxO structures

Mg_1−x Cu_xO solid solutions having an NaCl structure with 0⩽x⩽0.20 are synthesized and Cu-Mg_1−x Cu_xO structures are prepared for superconductivity studies. The magnetic susceptibility χ, electron paramagnetic resonance (EPR), and electrical conductivity of the solid solutions are studied at temperatures of 5–550 K. It is shown that χ ⁻¹(T) obeys the Curie-Weiss law with a paramagnetic Curie temperature Θ close to zero and an effective magnetic moment μ _eff=1.9 μ _B, close to the 1.73 μ _B of a Cu²⁺ ion with spin S=1/2. The width ΔH of the EPR line depends weakly on temperature and increases as x is raised. The volume narrowing of the EPR linewidth ΔH is used to estimate the exchange interaction parameter, 3×10⁻⁴ eV. The g-factor is close to 2 and is temperature independent. The electrical conductivity of Mg_1−x Cu_xO at T=300 K is ≈10⁻¹¹–10⁻¹² Ω⁻¹ cm⁻¹ for x=0 and increases to 10⁻⁵–10⁻⁶ Ω⁻¹ cm⁻¹ for x=0.15–0.20. The conductivity is p-type. Magnetic shielding is observed in Cu-Mg_1−x Cu_xO structures with x=0.15 and 0.20. The possible connection of this phenomenon with interference superconductivity in the contact layer of the structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 293–296 (February 1999)     

超导临界温度理论(Ⅰ)

本文求出了Eliashberg方程在T=T_c时的解,得到了下面的临界温度级数表示式:T_c=α₀(μ^*)(λ〈ω²〉)^1/2{1+1/λα₁(μ^*)〈ω⁴>/〈ω²>²+1/λ²(α₂₁(μ^*)〈ω⁶>/〈ω²>³+α₂₂(μ^*)〈ω⁴>²/〈ω²>⁴) +1/λ³(α₃₁(μ^*)〈ω⁸>/〈ω²>⁴+α₃₂(μ^*)(〈ω⁴>〈ω⁶>)/〈ω²>⁵)+α₃₃(μ^*)〈ω⁴>³/〈ω²>⁶+…},其中α₀(μ^*),α₁(μ^*)等仅是μ^*的函数。新的T_c公式表明了,T_c不仅依赖于λ、μ^*和〈ω²〉,而且依赖于有效声子谱α²F(ω)的各级矩〈ω²ⁿ〉。     

非定域位势e-μr/r·e-μr′/r′·e-αR/R及e-μr/r·e-μr′/r′·e(-(β(r+r′))1/2·R))/R的Regge渐近行为

本文证明了两个物理上有兴趣的非定域位势e^-μr/r·e^-μr′/r′·e^-αR/R及e^-μr/r·e^-μr′/r′·e^{(-(β(r+r′))1/2·R)})/R的分波S矩阵元对动量变数k在除沿虚轴的割线(-∞i,0),(μi,∞i)的全平面,对角动量变数λ在右半平面Reλ>-1/2的半纯性和当k,λ分别趋于无穷大时的渐近性质。最后得到了Regge渐近行为。     

正态电子偶素衰变率的实验研究

本文提出用外推N_2γ/N_3γ→0的方法测正态电子偶素的真空衰率λ₀,初步结果得到λ₀=7.034±0.013μs^－1,讨论了进一步改进实验的可能性.     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

Mg2+掺杂Zn2SiO4:Mn2+的溶胶-凝胶法合成及真空紫外发光特性研究

采用溶胶-凝胶法（sol-gel method）于不同气氛条件下成功合成了Zn_1.92-xMg_xSiO₄:0.08Mn²⁺（0≤x≤0.12）系列粉末样品.利用X射线衍射(XRD)、光致发光(PL)谱等分析手段对Zn_1.92-xMg_xSiO₄:0.08Mn²⁺系列     

各向异性非线性介质平板波导中的TM波

本文讨论了在三层平板介质波导中TM₀模的传播问题.三层介质的芯区是一层各向异性的Kerr型介质,上下两层则是线性介质.本文将利用E_x² >> E_x²这一性质,求解非线性方程组,给出零级近似和1级近似的解析解.     

模拟核素固化体Gd2Zr2-xCexO7(0≤ x≤ 2.0)的物相及化学稳定性研究

为研究钆锆烧绿石固化Pu(Ⅳ)的相变化情况及化学稳定性, 以Gd₂O₃, ZrO₂为原料, Ce(Ⅳ)作为Pu(Ⅳ)的模拟替代物质, 采用冷压热烧结的方法制备出Gd₂Zr_2-xCe_xO₇(0≤ x≤ 2.0)系列样品. 分别在40 °C和70 °C的合成海水中, 对固化体的长期浸出性能进行研究. 借助粉末X射线衍射仪对所制备样品的物相信息进行收集, 利用等离子体质谱仪对固化体的浸出浓度数据进行分析. 研究结果表明: 当x ≤0.08时, 固化体保持为烧绿石相; 当x>0.08时, 固化体转变为具有缺陷的萤石型结构相. 固化体中Gd³⁺, Zr⁴⁺和Ce⁴⁺在合成海水中, 随着浸泡时间的延长浸出浓度逐渐上升, 70 °C下的浸出浓度高于40 °C下的浸出浓度. 在42 d时, 固化体中Gd³⁺的最大浸出浓度在0.032 μg·ml^-1以下, Zr⁴⁺的最大浸出浓度在0.003 μg·ml^-1以下; Ce⁴⁺的最大浸出浓度在0.032 μg·ml^-1以下.     

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Two-photon photoemission from Ni (1 1 0) and (1 1 1) surfaces

Photoemission was observed when the samples were irradiated with photons in the energy range from 2.5 to 3.3 eV from a tunable dye laser with an intensity of 10⁸Wcm^?2. The emission shows a quadratic intensity dependence. The variation with angle of incidence and polarization is different for the two surfaces. The result obtained from the (1 1 0) surface is discussed with help of the band structure as a two-photon surface photoelectric effect.     

Comparing the band structure of Ag(1 1 1) monolayers on Ni(1 1 1) and Ni (0 0 1)

Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.     

Schottky barriers on diamond (1 1 1)

We have measured Schottky barrier heights Ø_B = 1.3 eV for Au and Ø_B = 1.5 eV for Al on (p-type) diamond(1 1 1)?(1 × 1) using photoelectron spectroscopy with synchroton radiation. These barrier heights yield a barrier index of S = 0.2, which is closer to the values for Si and Ge (S ～ 0.1) than to the value S = 0.4 calculated for jellium on an ideal diamond(1 1 1) surface. After reacting Al with the diamond surface by annealing to 800° C, we find that Ø_B decreases by 0.24 to 1.25 eV.     

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.     

Precise semiconductor nanotubes and nanoshells fabricated on (1 1 0) and (1 1 1) Si and GaAs

In our previous works, we showed that ultrathin epitaxial heterofilms (down to two monolayers for the case of InGaAs/GaAs) can be controllably detatched from substrates and rolled, under the action of internal stresses, into various cylindrical micro- and nanoshells (tubes, scrolls, rings, spirals, etc.). The present review outlines the cornerstone stages in the development of this fabrication technology for semiconductor and metal nanoobjects, including: (1) directional rolling of films yielding 3D micro- and nanoshells of various shapes; (2) assembling of micro- and nanoshells in more complex architectures; (3) super-critical drying of nanoshells, and (4) formation of nanoshells whose sizes can be precisely controlled in three dimensions.With this technology new possibilities that open up for the use of strained films, selectively, grown on uncommonly used (1 1 0) and (1 1 1) surfaces, are presented. The role of mechanical anisotropy in the formation of the 3D nanoshells and the electrical and mechanical properties of formed nanotubes are discussed.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Relativistic one-step photoemission calculations for Pt(1 1 1)

A fully relativistic one-step theory of photoemission has been applied to normal emission from Pt(1 1 1) induced by circularly polarized ultraviolet radiation. The calculated spin polarization and intensity spectra are in quantitative agreement with experimental data. Individual features are identified as bulk interband transitions and one-dimensional density of state involving initial states of specified symmetries.