Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers

BaTiO3 thin films in seven thousands of unit-cell layers have been successfully fabricated on SrTiO3 （001） substrates by laser molecular beam epitaxy. The fine streak pattern and the undamping intensity oscillation of reflection high-energy electron diffraction indicate that the BaTiO3 film was layer-by-layer epitaxial growth. The measurements of scanning electron microscopy and atomic force microscopy show that surfaces of the BaTiO3 thin film are atomically smooth. The measurements of x-ray diffraction and transmission electron microscopy, as well as selected-area electron diffraction reveal that the BaTiO3 thin film is a c-oriented epitaxial crystalline structure.     

Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7

Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.     

Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum （Mo） as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm^- 1.     

Study on the nitridation of β-Ga_2O_3 films

Single-crystal GaN layers have been obtained by nitriding β-Ga_2O_3 films in NH_3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga_2O_3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted Ga N porous films show the single-crystal structures and lowstress, which can be used as templates for the epitaxial growth of high-quality GaN.     

Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films

Cd1-xZnxSe films with different zinc contents are deposited by an electron beam evaporation technique onto glass substrates for applications in solid-state photovoltalc devices. The structural, optical and photoelectrochemical （PEC） properties of Cd1-xZnxSe films are studied. The host material Cd1-xZnxSe is prepared by the physical vapor deposition method of electron beam evaporation technique （PVD： EBE） under a pressure of 1 × 10^-5 mbar. The x-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along （002） direction. The optical properties shows that the band gap Eg varies from 2.08 to 2.84eV as zinc content varies from 0.2 to 0.8. A PEC cell of the configuration n-Cd1-xZnxSe/Na2S-S-NaOH is fabricated and the dynamic current-voltage characteristics in the dark atmosphere have been examined at room temperature. It has been found that both Voc and Iac decrease with the photoelectrode composition x. Efficiency η and fill factor （FF） also show similar variations. The material properties would be altered and excellently controlled by controlling the system composition x.     

Impact of GNSS radio occultation bending angle data assimilation in YH4DVAR system

Global Navigation Satellite System （GNSS） radio occultation measurements have been assimilated into the four- dimensional variational data assimilation system （YH4DVAR） using a one-dimensional bending angle operator （GBAO） as a new type of observation. For the sake of verifying the impact of GNSS radio occultation （RO） measurements to the data assimilation system, three experiments have been conducted. The statistical results of the analysis error experiment and forecast skill experiment show that the GNSS RO measurements have an impact on the analysis system. The typhoon forecast experiment shows the impact on the important weather process. They all have a positive impact on the weather forecast. Lastly, we look forward to future work on the observation system simulation experiment （OSSE） to investigate the impact of GNSS RO measurements as a function of observation number, which is an effective method to estimate the saturation of the observation number.     

Coupled-Channel Optical Calculations for e＋-Rb Collision at Intermediate Energies

We present the calculation of total cross sections for positron scattering by Rb at intermediate energies by using the coupled-channel optical method, in which an equivalent-local optical potential has been used to describe the continuum and rearrangement process. The present total cross sections are in good agreement with the measurements of Parikh et al. [Phys. Rev. A 47 （1993） 1535] and other theoretical calculation results. Our results show three peaks in the vicinity of 47eV, which have not been found in the previous measurements and theoretical calculations.     

Linear and Nonlinear Optical Absorptions of a Donor Impurity in Spherical Quantum Dots

An investigation of the optical properties of a hydrogenic donor in spherical parabolic quantum dots has been performed by using the matrix diagonalization method. The optical absorption coefficient between the ground （L = 0） and the first excited state （L = 1） have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the confinement strength. These results show the effects of the quantum size and the impurity on the optical absorption coefficient of a donor impurity quantum dot.     

Short-Wavelength Recording Properties of TeOx Thin Films

We prepare TeOx thin films by vacuum evaporation of TeO2 powder.It is found that the as-deposited TeOx films can represent a two-component system comprising crystalline tellurium particles dispersed in an amorphous TeO2 matrix.Results of the static recording test show that the TeOx films have good writing sensitivity for shortwavelength laser beam (514.5nm).Primary results of the dynamic recording test at 514.5 nm are also reported.The carrier-to-noise ratio of 30dB is obtained for the disc using a TeOx film as the recording medium.Atomic force microscopy is used to study the microstructure of recorded marks.Micro-area morphology images show that the marks are mechanically deformed,and depressions and bulges have been imaged in the recorded marks,resulting in the scattering of the reading laser beam.The analytical results of transmission electron microscopy show that there is not obvious difference between the phase states of the tellurium particles before and after laser irradiation.Recording mechanisms of the TeOx thin films are discussed based on the experimental results.     

Performances of ZnO-Based Dye Sensitized Solar Cells Fabricated by Hydrothermal Synthesis and Sol-Gel Technique

ZnO is introduced as an alternative to TiO2 in dye sensitized solar cells （DSSCs） due to its band gap similar to TiO2, higher electron mobility, and flexible procedures of preparations. Several samples of ZnO films are prepared with the hydrothermal synthesis method and the sol-gel technique, respectively. These ZnO films were assembled as photoanodes in DSSCs using N3 dye as the sensitizer. The ZnO-based cells prepared by the hydrothermal synthesis show typical current source characteristics, whose fill factor （FF） is 0.44 and photo-to-electric power conversion efficiency is 0.34%. On the other hand, all the samples prepared with the sol-gel technique show accompanied source characteristics with relatively higher power conversion efficiencies （1%） but a lower FF （0.26）. X-ray diffraction （XRD） and atomic force microscopy （AFM） measurements indicate that the sol-gel samples have small particles sizes. Therefore, sol-gel samples could adsorb more dye molecules to generate high conversion efficiencies. At the same time, more grain boundaries make it more possible for injected electrons to recombine with the oxidized electrolyte. Hydrothermal samples have bigger grains, so they show poor conversion efficiency and relatively high FF.     

Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor

In this paper, Ag_{11}In_{12}Te_{26}Sb_{51} phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag_{11}In_{12}Te_{26}Sb_{51} thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, E_a, is 2.07eV. The crystalline Ag_{11}In_{12}Te_{26}Sb_{51} films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag_{11}In_{12}Te_{26}Sb_{51} films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag_{11}In_{12}Te_{26}Sb_{51} films. The sheet resistance of the amorphous (R_{amo}) film is found to be larger than 1×10^6Ω and that of the crystalline (R_{cry}) film lies in the range from about 10^3 to 10^4Ω. So we have the ratio R_{amo}/R_{cry}=10^2～10^3, which is sufficiently large for application in memory devices.     

The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique

The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES) diagnosis during the fabrication of $\mu $c-Si:H thin films under different plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$ and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopyProject supported by the Natural Science Foundation of Guangdong Province, China (Grant No 05300378), the State Key Development Program for Basic Research of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural Science of Jinan University, Guangzhou, China (Grant No 51204056).2005-11-252005-11-252006-01-05The role of hydrogen in hydrogenated microcrystalline silicon （μc-Si：H） thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition （VHF-PECVD） technique have been investigated in this paper. With in situ optical emission spectroscopy （OES） diagnosis during the fabrication of μc-Si：H thin films under different plasma excitation frequency Ve （60MHz-90MHz）, the characteristic peak intensities （IsiH＊, IHα＊ and IHβ＊ ） in SiH4＋H2 plasma and the ratio of （IHα＊ ＋ IHβ＊ ） to IsiH＊ were measured; all the characteristic peak intensities and the ratio （IHα＊ ＋ IHβ＊ ）/IsiH＊ are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4＋H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si：H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si：H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si：H films deposited with RF-PECVD technique. This implies that μc-Si：H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking.     

Magnetism and giant magnetocaloric effect in rare-earth-based compounds R_3BWO_9(R = Gd,Dy, Ho)

The magnetism and magnetocaloric effect(MCE) of rare-earth-based tungstate compounds R_3 BWO_9(R=Gd,Dy,Ho) have been studied by magnetic susceptibility,isothermal magnetization,and specific heat measurements.No obvious long-range magnetic ordering can be found down to 2 K.The Curie-Weiss fitting and magnetic susceptibilities under different applied fields reveal the existence of weak short-range antiferromagnetic couplings at low temperature in these systems.The calculations of isothermal magnetization exhibit a giant MCE with the maximum changes of magnetic entropy being 54.80 J/kg-K at 2 K for Gd_3 BWO_9,28.5 J/kg-K at 6 K for Dy_3 BWO_9,and 29.76 J/kg-K at 4 K for Ho_3 BWO_9,respectively,under a field change of 0-7 T.Especially for Gd_3 BWO_9,the maximum value of magnetic entropy change(-ΔS_M~(max)) and adiabatic temperature change(-ΔT_(ad)~(max)) are 36.75 J/kg·K and 5.56 K for a low field change of 0-3 T,indicating a promising application for low temperature magnetic refrigeration.     

Enhanced optical nonlinear absorption of graded Au--TiO2 composite films

This paper reports that single-layer and graded Au-TiO2 granular composite films with Au atom content 15%- 66% were prepared by using reactive co-sputtering technique. The third-order optical nonlinearity of single-layer and graded composite films was investigated by using s- and p-polarized Z-scans in femtosecond time scale. The nonlinear absorption coefficient βeff of single-layer Au-TiO2 films is measured to be -2.3×10^3-0.76×10^3 cm/GW with Au atom content 15%-66%. The βeff value of the 10-layer Au-TiO2 graded film is enhanced to be -2.1×10^4cm/GW calculated from p-polarized Z-scans, which is about ten times the maximum βeff of single-layer films. Broadened response in the wavelength region 730-860 nm of the enhanced optical nonlinearity of graded Au-TiO2 composite films was also investigated.     

Collective Dand Structures in Doubly Odd 136La Nucleus

Using heavy-ion nuclear reaction and in-beam γ-ray spectroscopy technique,high spin states of ¹³⁶La have been studied. The nuclear reaction used is ¹³⁰Te(¹¹B,5n) with a beam energy 60MeV. The level scheme with three collective band structures has been updated with spin up to 20h. The collective backbending has been observed in $\uppi h_{11/2}\otimes \upnu h_{11/2}$ band. According to the TRS calculations,this backbending is due to the alignment of a pair of h_11/2 neutrons. The signature splitting and inversion for the $\uppi h_{11/2}\otimes \upnu h_{11/2}$ band were also discussed. Other two bands based on $12^-$ and $16^+$ levels were proposed as oblate deformation with $\gamma\approx -60^\circ$. They most probably originate from four- and six- quasiparticle configurations, that is,$\uppi h_{11/2}\otimes\upnu g_{7/2} h_{11/2}^2$ and $\uppi g_{7/2}\otimes\upnu g_{7/2}^2 d_{5/2}h_{11/2}^2$ respectively.     

Magnetic properties of deposited gadolinium atoms,dimers and their monoxides

Magnetic properties of gadolinium clusters deposited on magnetic ultrathin Fe/Cu(100) films have been measured using X-ray Magnetic Circular Dichroism spectroscopy (XMCD). 3d↦4f as well as 4d↦4f absorption spectra are presented and discussed. Changes in the relative peak intensities between the monomer, dimer and the corresponding monoxides are observed for the multiplets. The comparison with bulk measurements and calculations exhibit a transition from atomic like to bulk like properties.     

Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μ c-Si:H layers were prepared by using a different total gas flow rate (F_total), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ～ 1.0~nm/s. The influence of F_total on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μ c-Si:H thin films were improved with increasing F_total. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With F_total of 300~sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5~\AA/s (1~\AA=0.1\,nm).     

Carrier relaxation time divergence in single and double layer cuprates

We report the transient optical pump-probe reflectivity measurements on single and double layer cuprate single crystals and thin films of ten different stoichiometries. We find that with sufficiently low fluence the relaxation time ( of all samples exhibits a power law divergence with temperature . Further, the divergence has an onset temperature above the superconducting transition temperature for all superconducting samples. Possible causes of this divergence are discussed.Received: 30 June 2003, Published online: 23 December 2003PACS: 74.78.Bz High-T _c films - 74.72.-h Cuprate superconductors (high-T _c and insulating parent compounds) - 74.25.Gz Optical propertiesM.L. Schneider: Present address: NIST, mc 816.01, 325 Broadway, Boulder, CO 80305-3328, USA     

Structural, morphological and optical properties of \hbox {In}_{2}\hbox {S}_{3} thin films obtained by SILAR method

$\hbox {In}_{2}\hbox {S}_{3}$ thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are $\upbeta $ - $\hbox {In}_{2}\hbox {S}_{3}$ polycrystalline thin films with $\hbox {In}_{6}\hbox {S}_{7 }$ as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.     

Elastic collisions between Si and D atoms at low temperatures and accurate analytic potential energy function and molecular constants of the SiD（χ^2П） radical

Interaction potential of the SiD(X2Π) radical is constructed by using the CCSD(T) theory in combination with the largest correlation-consistent quintuple basis set augmented with the diffuse functions in the valence range. Using the interaction potential, the spectroscopic parameters are accurately determined. The present D0, De, Re, ωe, αe and Be values are of 3.0956 eV, 3.1863 eV, 0.15223 nm, 1472.894 cm-1, 0.07799 cm-1 and 3.8717 cm-1, respectively, which are in excellent agreement with the measurements. A total of 26 vibrational states is predicted when J=0 by solving the radial Schro¨dinger equation of nuclear motion. The complete vibrational levels, classical turning points, initial rotation and centrifugal distortion constants when J=0 are reported for the first time, which are in good accord with the available experiments. The total and various partial-wave cross sections are calculated for the elastic collisions between Si and D atoms in their ground states at 1.0×10-11–1.0×10-3 a.u. when the two atoms approach each other along the SiD(X2Π) potential energy curve. Four shape resonances are found in the total elastic cross sections, and their resonant energies are of 1.73×10-5, 4.0×10-5, 6.45×10-5 and 5.5×10-4 a.u., respectively. Each shape resonance in the total elastic cross sections is carefully investigated. The results show that the shape of the total elastic cross sections is mainly dominated by the s partial wave at very low temperatures. Because of the weakness of the shape resonances coming from the higher partial waves, most of them are passed into oblivion by the strong s partial-wave elastic cross sections.