低速多电荷态离子He2+、O2+和Ne2+与W靶表面相互作用的动能电子发射研究

本文报道了He2 ,O2 和Ne2 与W靶表面相互作用中的动能电子产额随离子入射速度变化的实验测量结果.结果表明:在本实验的入射速度范围内,对同一入射离子,动能电子产额随入射离子的速度增大而线性增加.基于动能电子发射的机理,我们分析了影响动能电子产额的因素,理论上得出动能电子产额与入射速度增长呈线性增加的关系,取得了实验上和理论上一致的结果.     

高电荷态离子207Pb36+与金属Nb表面作用产生的二次离子产额

本文报道了利用兰州重离子加速器国家实验室ECR源引出的高电荷态离子207Pb36+入射到金属Nb表面产生二次离子溅射的实验测量结果.实验发现,二次离子产额Y随入射初动能Ek的增加有先增加后减小的关系,二次离子产额有一个峰值.理论分析认为,这一过程是势能沉积作用与线性级联碰撞过程协同作用的结果.     

129Xeq+轰击N型和P型Si表面时的电子发射产额研究

在兰州重离子加速器国家实验室测量了1.8 MeV Xeq+离子分别轰击N型和P型Si两种靶材表面时的电子发射产额。实验中,通过改变入射离子的电荷态,研究了入射离子势能沉积对两种靶材表面电子发射产额的贡献。结果发现同一离子入射时,N型Si表面的电子发射产额高出P型Si表面的电子发射产额约12.5%;对于具有相同入射动能的Xeq+离子,两种靶材表面的电子发射产额均随着入射离子势能的增加而线性增加。此外,还测量了3.4 MeV Xeq+离子分别轰击以上两种靶材时的电子发射产额,得到了类似的结果。本文利用功函数分别从动能电子发射和势能电子发射两个角度对实验结果进行了分析讨论。The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.     

反冲原子对低速离子轰击Si表面时电子发射产额的影响

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)γ(Ne)γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.     

近玻尔速度Ne2+离子穿过碳膜引起的电子发射

本文测量了入射能为2–25 keV/u的Ne²⁺离子穿过不同厚度碳膜诱导的前向、后向 (分别对应出射表面和入射表面) 电子发射产额. 实验中通过改变炮弹离子的能量, 系统的研究了势能沉积、电子能损以及反冲原子对前向、后向电子发射产额的贡献. 结果表明, 离子的势能沉积只对后向电子发射有贡献, 前向、后向电子发射产额分别与Ne²⁺离子在薄膜出射、入射表面的电子能损近似成正比关系, 其中电子能损很低 (对应于离子能量很低) 的时候, 反冲原子对电子发射的贡献不能忽略. 关键词： 近玻尔速度 电子发射 电子能损 反冲原子     

高电荷态离子129Xe29+与不同金属表面作用产生的X射线谱

研究了高电荷态离子129Xe29+入射金属Au、Mo、Be表面产生的特征X射线谱。实验结果表明,在入射离子的动能相同时,Au的Mα1-X射线产额比Mo的Lα1-X、Lα2-X、Lβ 1-X射线总产额高,特征X射线的产额随入射离子动能的增加而显著增加;不同动能的Xe29+入射金属Au、Mo、Be表面均未产生Xe的特征X射线。     

高电荷态离子Arq+与不同金属靶作用产生的X射线

研究了高电荷态离子Arq+(q=16,17,18)入射金属Be,Al,Ni,Mo,Au靶表面产生的X射线谱.实验结果表明,Ar的Kα-X射线是离子在与固体表面相互作用过程中固体表面之下形成空心原子发射的.电子组态1s2的高电荷态Ar16+离子在金属表面中性化过程中,存在的多电子激发过程使Ar16+的K壳层电子激发产生空穴,级联退激发射Ar的Kα特征X射线.Ar17+离子在金属表面作用过程中产生的X射线谱形与靶材料没有明显的关联,入射离子的Kα-X射线产额与其最初的电子组态有关,靶原子的X射线产额与入射离子的动能有关.     

O~(2+)离子穿过碳膜引起的前后表面电子发射

测量了入射能为1.9~11.3 keV/u的O~(2+)离子穿过碳膜诱导的前向、后向(分别对应出射表面和入射表面)电子发射产额。实验中,通过改变入射离子的能量和流强,系统地研究了电子能损和离子束流强度对前向、后向电子发射产额的影响。结果表明,在本实验的能量范围内,前向、后向电子发射产额与对应表面的电子能损有近似的正比关系,而与束流强度无关。分析还发现引起后向电子发射的动能阈值约为0.2 keV/u,势能电子发射产额约为1 e~-/ion。     

50~250 keV质子入射SiC和Si靶时的电子发射特性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量范围为50~250 keV 的质子入射碳化硅靶和硅靶表面的电子发射产额。实验结果发现,两种半导体靶材的电子发射产额随质子入射能量变化趋势均与作用过程中电子能损随质子入射能量的变化趋势相似。通过分析电子发射的能量来源,发现实验中电子发射产额主要由动能电子发射产额贡献,势能电子发射产额可以忽略不计。两种靶材的电子发射产额均近似地正比于质子入射靶材过程中的电子能损,比例系数B随入射能量略有变化。     

Ar16+和Ar17+离子与Zr作用产生的X射线谱

将超导离子源提供的10-20keV/q Ar16 和Ar17 离子入射到Zr金属表面,在相互作用中产生的X射线谱表明,高电荷态Ar16 离子在金属表面中性化过程中有可能存在多电子激发,使Ar16 的K壳层电子被激发形成空穴,在退激过程中发射特征Kα-X射线.空心原子Ar的K层发射X射线强度随入射离子的动能而减弱,靶原子Zr的L壳层发射X射线强度随入射离子动能的增加而增强.Ar17 的单离子的Kα-X射线产额比Ar16 单离子的Kα-X射线产额大5个数量级.     

低能电子显微术及其应用

低能电子显微术是新发展起来的一种显微探测技术。它的特点是利用低能（１－３０ｅＶ）电子的弹性背散射使表面实空间实时成像，具有高的横向（１５ｎｍ）和纵向（原子级）分辩率，且易与低能电子衍射及其他电子显微术相结合。近年来它已有效地应用于金属和半导体表面的形貌观测、表面相变、吸附、反应及生长过程的研究。     

On the interpretation of the electron anomalous magnetic moment

Guided by a Compton-sized model, we demonstrate that: (a) the magnetic self-energy of the electron, as estimated initially by Rasetti and Fermi, can be directly related to both the sign and the magnitude of the electron anomalous magnetic moment; and (b) the classical expression for the magnetic self-energy of the electron exhibits the same characteristic logarithmic divergence that occurs in QED. This electron model quantitatively reproduces the spin, magnetic moment, and gyromagnetic ratio of the electron, correct to first order in = e² /c. It also relates the quantum-mechanical spin projection angle to the vanishing of the electric quadrupole moment, and it is capable of reproducing point-like scattering behavior.     

The effects of self-fields on the electron trajectory in a two-stream free electron laser with a helical wiggler and an axial guiding magnetic field

A theory for the two-stream free-electron laser(TSFEL) with a helical wiggler and an axial guide magnetic field is developed.In the analysis,the effects of self-fields are taken into account.An analysis of the two-stream steady-state electron trajectories is given by solving the equation of motion.Numerical calculations show that there are seven groups of orbits in the presence of self-fields instead of two groups reported in the absence of self-fields.The stability of the trajectories is studied numerically.     

Relaxation between electrons and surface phonons of a homogeneously photoexcited metal film

The energy relaxation between the hot degenerate electrons of a homogeneously photoexcited metal film and the surface phonons (phonon wave vectors in two dimensions) is considered under Debye approximation. The state of electrons and phonons is described by equilibrium Fermi and Bose functions with different temperatures. Two cases for electron scattering by the metal surface, namely specular and diffuse scattering, are considered.     

北京自由电子激光器电子束截面监测系统

报告了北京自由电子激光器(BFEL)从30MeV直线加速器出口到摇摆磁铁出口束流输运段的束流截面监测系统。该系统由四台遥控气动可伸缩荧光屏探头、光学放大系统、闭路电视摄象系统及视频图象处理系统组成。利用该系统进行模拟实验,其系统空间分辨率约100μm,达到BFEL总体要求。利用该系统可以测量摇摆磁铁入口处及内部电子束和准直激光的截面、位置和畸变,进行束流准直、聚焦和发射度测量。     

Investigation of the effect of electron cyclotron heating on runaway generation in the KSTAR tokamak

Wave enhanced runaway generation is expected to play an important role in the conversion of plasma current into runaway current during major disruptions. The fast electrons created by electron cyclotron heating (ECH) were used to study this issue in KSTAR. It is found that the fast electrons driven by ECH can enhance runaway production in the flat top phase with high loop voltage. The runaway current in disruptions was not enhanced by the ECH produced fast electron population due to the strong magnetic fluctuations which inhibited the generation of runaway electrons. It is found that a complete loss of existing REs during thermal quench has occurred in KSTAR limiter configuration discharges.     

Near threshold photodetachment cross section of negative atomic oxygen ions

A 40-target state close-coupling calculation for the photodetachment cross section of negative atomic oxygen near threshold is carried out with core－valence electron correlation by using the R-matrix method. It was shown that after considering the excitations of two electrons from the 2s shell, the electron affinity of O^- (2s^22p^5{}^2P°) agrees with the experimental result much better than that just considering the excitations of electrons only from the 2p shell as well as only one electron from the 2s shell. Total cross section as well as the main contribution of the ionization channels to the partial cross section are illustrated to show the structure near threshold clearly.     

Holes drilling in gold and silver decahedral nanoparticles by the convergent beam electron diffraction electron beam

The 200?kV focused electron beam in the convergent beam electron diffraction patterns mode in a transmission electron microscope (TEM) with field emission gun is able to drill holes in gold and silver decahedral nanoparticles. However, although they are done under the same circumstances, the holes are shapeless in the silver and faceted in gold nanoparticles. In addition to this, the holes are closed during their high-resolution TEM observation in both materials. To comment their differences, displacement energy considerations are taken into account as function of the sputtering energy in order to modify the displacement cross-section of the processes.     

Commissioning of electron cooling in CSRe

The 400 MeV/u 12C6＋ ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe.The momentum cooling time was estimated near 15 s.The cooling force was measured in the cases of difierent electron beam profiles,and the difierent angles between the ion beam and electron beam.The lifetime of the ion beam in CSRe was over 80 h.The dispersion in the cooling section was confirmed as positive close to zero.The beam sizes before cooling and after cooling were measured by the moving screen.The beam diameter after cooling was about 1 mm.The bunch length was measured with the help of the signals from the beam position monitor.The difiusion was studied in the absence of the electron beam.