| 低能电子显微术及其应用 |
| |
| 引用本文： | 蔡群,董树忠.低能电子显微术及其应用[J].物理,1996,25(7):433-439. |
| |
| 作者姓名： | 蔡群 董树忠 |
| |
| 作者单位： | 复旦大学应用表面物理国家重点实验室!上海200433 |
| |
| 摘 要： | 低能电子显微术是新发展起来的一种显微探测技术。它的特点是利用低能（１－３０ｅＶ）电子的弹性背散射使表面实空间实时成像，具有高的横向（１５ｎｍ）和纵向（原子级）分辩率，且易与低能电子衍射及其他电子显微术相结合。近年来它已有效地应用于金属和半导体表面的形貌观测、表面相变、吸附、反应及生长过程的研究。
|
| 关 键 词： | 低能电子 电子显微术 电子显微镜 |
Low Energy Electron Microscopy and its Applications |
| |
| Cai Qun,Dong Shuzhong.Low Energy Electron Microscopy and its Applications[J].Physics,1996,25(7):433-439. |
| |
| Authors: | Cai Qun Dong Shuzhong |
| |
| Abstract: | Low energy electron microscopy (LEEM) is a newly developed type of microscopy which uses surface true imaging with elastically backscattered low energy elec- trons. LEEM has high lateral (15nm) and longitudinal (atomic) resolution, and can be easily combined with low energy electron diffraction or some other form of microscopy. Re- cently, LEEM has been used in many investigations of surface topography, phase transi- tion, film growth ; adsorption and reaction on metal or semiconductor surfaces. |
| |
| Keywords: | low energy electron electron microscopy electron microscope low energy electron microscopy low energy electron microscope |
| 本文献已被 CNKI 维普 等数据库收录！ |
