Large Enhancement of the Single-Molecular Conductance of a Molecular Wire through a Radical Substituent

The single-molecular conductance between two π-conjugated wires with and without a radical substituent has been compared. Specifically, methyl- and iminonitroxide-substituted 4-(biphenyl-4-yl)pyridine wires bound onto a porphyrin template were subjected to scanning tunneling microscopy (STM) apparent-height measurement at the interface between highly oriented pyrolytic graphite (HOPG) and octan-1-oic acid. Statistical analysis of the STM images revealed that the radical-substituted wire has 3.2±1.7-fold higher conductance than the methyl-substituted reference. Although density functional theory (DFT) calculation suggests that only 17 % of the SOMO is distributed on the wire moiety, the effect was significant. This study presents the potential of radical substituents to achieve high conductivity in molecular wires.     

Mechanistic Investigation and Conductance Modulation of a Metal-Molecule-Metal Junction via Extra Acid Addition

One important prerequisite for the fabrication of molecular functional device strongly relies on the understanding the conducting behaviors of the metal-molecule-metal junction that can respond to an external stimulus. The model Lewis basic molecule 4,4′-(pyridine-3,5-diyl)dibenzonitrile (DBP), which can react with Lewis acid and protic acid, was synthesized. Then, the molecular conducting behavior of DBP, DBP-B(C₆F₅)₃, and DBP-TfOH (DBP-B(C₆F₅)₃, and DBP-TfOH were produced by Lewis acid and protonic acid treatment of DBP) was researched and compared. Given that their identical physical paths for DBP, DBP-B(C₆F₅)₃, and DBP-TfOH to sustain charge transport, our results indicate that modifying the molecular electronic structure, even not directly changing the conductive physical backbone, can tune the charge transporting ability by nearly one order of magnitude. Furthermore, the addition of another Lewis base triethylamine (of stronger alkaline than DBP), to Lewis acid-base pair reverts the electrical properties back to that of a single DBP junction, that is constructive to propose a useful but simple strategy for the design and construction of reversible and controllable molecular device based on pyridine derived molecule.     

Interactions of DNA with graphene and sensing applications of graphene field-effect transistor devices: A review

Graphene field-effect transistors (GFET) have emerged as powerful detection platforms enabled by the advent of chemical vapor deposition (CVD) production of the unique atomically thin 2D material on a large scale. DNA aptamers, short target-specific oligonucleotides, are excellent sensor moieties for GFETs due to their strong affinity to graphene, relatively short chain-length, selectivity, and a high degree of analyte variability. However, the interaction between DNA and graphene is not fully understood, leading to questions about the structure of surface-bound DNA, including the morphology of DNA nanostructures and the nature of the electronic response seen from analyte binding. This review critically evaluates recent insights into the nature of the DNA graphene interaction and its affect on sensor viability for DNA, small molecules, and proteins with respect to previously established sensing methods. We first discuss the sorption of DNA to graphene to introduce the interactions and forces acting in DNA based GFET devices and how these forces can potentially affect the performance of increasingly popular DNA aptamers and even future DNA nanostructures as sensor substrates. Next, we discuss the novel use of GFETs to detect DNA and the underlying electronic phenomena that are typically used as benchmarks for characterizing the analyte response of these devices. Finally, we address the use of DNA aptamers to increase the selectivity of GFET sensors for small molecules and proteins and compare them with other, state of the art, detection methods.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

Overdetermined partial boundary value problems on finite networks

In this study, we define a class of non-self-adjoint boundary value problems on finite networks associated with Schrödinger operators. The novel feature of this study is that no data are prescribed on part of the boundary, whereas both the values of the function and of its normal derivative are given on another part of the boundary. We show that overdetermined partial boundary value problems are crucial for solving inverse boundary value problems on finite networks since they provide the theoretical foundations for the recovery algorithm. We analyze the uniqueness and the existence of solution for overdetermined partial boundary value problems based on the nonsingularity of partial Dirichlet-to-Neumann maps. These maps allow us to determine the value of the solution in the part of the boundary where no data was prescribed. We also execute full conductance recovery for spider networks.     

A study on the correlation between the thermal contact conductance and effective factors in fin–tube heat exchangers with 9.52 mm tube

The thermal contact resistance is a principal parameter interfering with heat transfer in a fin–tube heat exchanger. However, the thermal contact resistance in the interface between tubes and fins has not been clearly investigated. The objective of the present study is to examine the thermal contact conductance for various fin–tube heat exchangers with tube diameter of 9.52 mm and to find a correlation between the thermal contact conductance and effective factors such as expansion ratio, fin type, fin spacing and hydrophilic coating. In this study, experiments have been conducted only to measure heat transfer rate between hot and cold water. To minimize heat loss to the ambient air by the natural convection fin–tube heat exchangers have been placed in an insulated vacuum chamber. Also, a numerical scheme has been employed to calculate the thermal contact conductance with the experimental data. As a result, a new correlation including the influences of expansion ratio, slit of fin and fin coating has been introduced, and the portion of each thermal resistance has been estimated in the fin–tube heat exchangers with 9.52 mm tube.     

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

Dc conductance of ordered and disordered silicene superlattices

This paper studies the conductance of charge carriers through silicene-based superlattices consisting of monolayer silicene by means of transfer matrix method. At first, we consider the ordered superlattices and drive analytically the transmission probability of Dirac fermions. We show that the number of resonance picks increases with increasing the number of superlattice barriers. In order to the best understand of the appearance of the picks, we exactly studied transmission properties of the silicene superlattice. Also, the effect of disorder on the probability of transmission through the system of various sizes is studied. The short-range correlated disorder is applied on the thickness of electron doped silicene strips as quantum barriers which fluctuates around their mean values. We show that the oscillating conductance as a function of barriers hight suppresses with imposing the disorder in the silicene superlattice. Also, the effect of structural parameters on the conductance of the system is studied.     

Organometallic Molecular Wires with Thioacetylene Backbones,trans-{RS-(C≡C)n}2Ru(phosphine)4: High Conductance through Non-Aromatic Bridging Linkers

In this work, the design, synthesis, and single-molecule conductance of ethynyl- and butadiynyl-ruthenium molecular wires with thioether anchor groups [RS=n-C₆H₁₃S, p-tert-Bu−C₆H₄S), trans-{RS−(C≡C)_n}₂Ru(dppe)₂ (n=1 ( 1^R ), 2 ( 2^R ); dppe: 1,2-bis(diphenylphosphino)ethane) and trans-(n-C₆H₁₃S−C≡C)₂Ru{P(OMe)₃}₄ 3^hex ] are reported. Scanning tunneling microscope break-junction study has revealed conductance of the organometallic molecular wires with the thioacetylene backbones higher than that of the related organometallic wires having arylethynylruthenium linkages with the sulfur anchor groups, trans-{p-MeS−C₆H₄-(C≡C)_n}₂Ru(phosphine)₄ 4 ⁿ (n=1, 2) and trans-(Th−C≡C)₂Ru(phosphine)₄ 5 (Th=3-thienyl). It should be noted that the molecular junctions constructed from the butadiynyl wire 2^R , trans-{ Au −RS−(C≡C)₂}₂Ru(dppe)₂ ( Au : gold metal electrode), show conductance comparable to that of the covalently linked polyynyl wire with the similar molecular length, trans-{ Au −(C≡C)₃}₂Ru(dppe)₂ 6³ . The DFT non-equilibrium Green's function (NEGF) study supports the highly conducting nature of the thioacetylene molecular wires through HOMO orbitals.     

单分子电导测量技术及其影响因素

Molecular electronics is an important field for the application of nanotechnologies with an ultimate goal of building functional devices using single molecules or molecular arrays to realize the same functionality as macroscopic devices. To attain this goal, reliable techniques for measuring and manipulating electron transfer processes through single molecules are essential. There are various techniques and many environmental factors influencing single-molecule electronic conductance measurements. In this review, we first provide a detailed introduction and classification of the current well-accepted techniques in this field for measuring single-molecule conductance. All available techniques are summarized into two categories: the fixed junction technique and break junction technique. The break junction technique involves repeatedly forming and breaking molecular junctions by mechanically controlling a pair of electrodes moving into and out of contact in the presence of target molecules. Single-molecule conductance can be determined from the conductance plateaus that appear in typical conductance decay traces when molecules bind two electrodes during their separation process. In contrast, the fixed junction technique is to fix the distance between a pair of electrodes and measure the conductance fluctuations when a single molecule binds the two electrodes stochastically. Both techniques comprise different application methods and have been employed preferentially by different groups. Specific features of both techniques and their intrinsic advantages are compared and summarized in Section 4.