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Dc conductance of ordered and disordered silicene superlattices
Institution:1. Department of Physics, Shahid Rajaee Teacher Training University, Lavizan, Tehran 16788-15811, Iran;2. School of Physics, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran;1. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;2. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;3. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;1. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;2. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, E-28040 Madrid, Spain
Abstract:This paper studies the conductance of charge carriers through silicene-based superlattices consisting of monolayer silicene by means of transfer matrix method. At first, we consider the ordered superlattices and drive analytically the transmission probability of Dirac fermions. We show that the number of resonance picks increases with increasing the number of superlattice barriers. In order to the best understand of the appearance of the picks, we exactly studied transmission properties of the silicene superlattice. Also, the effect of disorder on the probability of transmission through the system of various sizes is studied. The short-range correlated disorder is applied on the thickness of electron doped silicene strips as quantum barriers which fluctuates around their mean values. We show that the oscillating conductance as a function of barriers hight suppresses with imposing the disorder in the silicene superlattice. Also, the effect of structural parameters on the conductance of the system is studied.
Keywords:Silicene  Nanostructures  Superlattices  Dc conductance
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