A GI/Geo/1 queue with negative and positive customers

The arrival of a negative customer to a queueing system causes one positive customer to be removed if any is present. Continuous-time queues with negative and positive customers have been thoroughly investigated over the last two decades. On the other hand, a discrete-time Geo/Geo/1 queue with negative and positive customers appeared only recently in the literature. We extend this Geo/Geo/1 queue to a corresponding GI/Geo/1 queue. We present both the stationary queue length distribution and the sojourn time distribution.     

A study of direct- and pulse-current chromium electroplating on rotating cylinder electrode (RCE)

Direct- and pulse-current (DC and PC) chromium electroplating on Cr-Mo steel were performed in a sulfate-catalyzed chromic acid solution at 50 °C using a rotating cylinder electrode (RCE). The electroplating cathodic current densities were at 30, 40, 50 and 60 A dm⁻², respectively. The relationship between electroplating current efficiency and the rotating speed of the RCE was studied. The cross-sectional microstructure of Cr-deposit was examined by transmission electron microscope (TEM). Results showed that DC-plating exhibited higher current efficiency than the PC-plating under the same conditions of electroplating current density and the rotating speed. We found the critical rotating speed of RCE used in the chromium electroplating, above this rotating speed the chromium deposition is prohibited. At the same plating current density, the critical rotating speed for DC-plating was higher than that for PC-plating. The higher plating current density is, the larger difference in critical rotating speeds appears between DC- and PC-electroplating. Equiaxed grains, in a nanoscale size with lower dislocation density, nucleate on the cathodic surface in both DC- and PC-electroplating. Adjacent to the equiaxed grains, textured grains were found in other portion of chromium deposit. Fine columnar grains were observed in the DC-electroplated deposit. On the other hand, very long slender grains with high degree of preferred orientation were detected in PC-electroplated deposit.     

1.55 μm低温生长GaAs谐振腔增强型探测器

利用低温（200℃）生长的GaAs材料作为吸收层制备了GaAs基1.55 μm谐振腔增强型（RCE） 光电探测器，对其光电特性进行了分析、研究.无光照0偏压下探测器暗电流为8.0×10－12A；光电流谱峰值波长1563 nm；响应谱线半宽4 nm, 具有良好的波长选择性.     

Artificial Neural Network That Can Say “Unknown”

A new artificial neural network that can reject strange patterns is presented. The new network is an improved version of the RCE network. Each cell in the last layer of the present network has two thresholds. The new threshold produces the smallest boundary that encloses all examples associated with the cell in the pattern vector space. The present network can reject strange patterns by using this boundary. The rejection of strange patterns in the present and RCE networks was investigated by practical experiments using digits sampled from X-ray films of the human chest.     

硅基1.55 μm可调谐共振腔窄带光电探测器的研究

制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44％,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.     

超薄有源层谐振腔增强型调制器

提出利用超薄有源层制备高性能谐振腔增强型(RCE)半导体电吸收调制器件的可能性,并与波导型器件进行性能对比;对透射和反射两种类型器件优化分析了器件结构,进行了性能比较,结果表明:在插入损耗相当的情况下,反射式器件具有更高的调制对比度.     

Design of a silicon RCE Schottky photodetector working at 1.55 μm

In this paper, the design of a resonant cavity-enhanced (RCE) Schottky photodetector, based on internal photoemission effect and working at 1.55 μm, is presented. In order to estimate the theoretical quantum efficiency we take the advantage of analytical formulation of the internal photoemission effect (Fowler theory), and its extension for thin films, while for the optical analysis of device a numerical method, based on the transfer matrix method, has been implemented. Finally, we complete our design calculating bandwidth and bandwidth-efficiency product.Our numerical results prove that a quantum efficiency of 0.1% is obtained at resonant wavelength (1.55 μm) with a very thin absorbing metal layer (30 nm). Theoretical values of 100 GHz and 100 MHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency. The proposed photodetector can work at room temperature and its fabrication is completely compatible with standard silicon technology.