高能电子辐照绝缘厚样品的表面电位动态特性

采用数值计算和实验测量相结合的方法, 阐明了高能电子束照射下绝缘厚样品的表面电位和电子产额动态特性. 结果表明: 由于电子在样品内部的散射和输运, 沿着深度方向, 空间电位先缓慢下降到最小值, 然后逐渐升高并趋近于零; 随着电子束照射, 样品的表面电位逐渐下降, 可至负千伏量级, 电子总产额逐渐增大至一个接近于1的稳定值; 电子束停止照射后, 长时间放置下, 表面电位将逐渐升高, 但带电并不会消除; 表面电位随电子束能量的升高近似线性下降, 随入射角的增大而升高, 而随样品厚度的增大仅略有下降.     

铜活化法诊断神光Ⅲ主机装置氘氚中子产额

介绍了铜活化诊断氘氚中子产额的测量原理,分析了62 Cu和64 Cu两种活化核素在符合测量中的贡献。针对不同范围内的中子产额测量,提出了系统灵敏度相对标定法和64 Cu活化核标定法。通过添加中子屏蔽锥测量了标定场所散射中子影响。计算评估了63 Cu(n,γ)64 Cu反应过程对活化测量的影响。在神光Ⅲ主机装置上,利用该系统测量了直接驱动氘氚中子产额。实验结果表明:氘氚中子产额在109~1013范围采用相对标定方法较为合适,64 Cu活化核的标定方法适用于1012~1016范围内产额测量。标定场所散射中子对灵敏度标定因子影响约0.4%。63 Cu俘获辐射反应在64 Cu活化核标定中贡献小于1%。目前神光Ⅲ主机装置直接驱动氘氚中子产额约8×1012。     

预制层溅射气压对CIGS薄膜结构及器件的影响

研究了金属预制层制备过程中溅射气压对Cu(In_1-xGa_x)Se₂(CIGS)薄膜及电池器件性能的影响.通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度,在合适的预制层结构下,活性硒化热处理过程中,可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体.高溅射气压会使预制层过于致密,呈现非晶态趋势.经活性硒化热处理后,CIGS薄膜容易产生CIS与CGS"两相分离"现象,从而导致CIGS薄膜太阳电池的开路电压和填充因子降低,电池转换效率由10.03%降低到5.02%.     

Xe~(26+)入射Au靶离子L壳层空穴的产生与退激辐射

基于两体碰撞过程的能量与角动量守恒,推导出Xe26+离子与Au原子碰撞过程,单离子的L壳层空穴产额与离子动能的理论关系.实验测定了动能2.4-3.6Me V的Xe26+离子入射Au靶,产生的Xe的L-X射线谱,获得了射线产额与离子入射动能的实验关系.结果表明,碰撞过程产生Xe L壳层空穴的同时,产生了一定数目的 M壳层空穴,导致L壳层空穴平均荧光产额显著变大,在实验能量范围,空穴产额的理论值与射线产额的实验值存在较好的一致性.     

溅射MOS_2膜和PTFE膜在边界润滑条件下的摩擦学性能之研究

本文对溅射二硫化钼(MoS_2)膜和聚四氟乙烯(PTFE)膜在边界润滑条件下的摩擦学性能进行了研究。结果表明,与未镀膜的轴承钢相比,这两种固体润滑膜都具有较好的抗粘着性和减摩性,以及对硬质颗粒良好的嵌入性,但在同样的负荷条件下,PTFE膜的磨损比MoS_2膜的轻微。     

基于一种新型超腔的高亮度激光同步辐射分析

 提出了一种由一对抛物面构成的超腔的技术方案,计算了超腔汇聚点处的总光子密度。利用康普顿散射理论对基于抛物面超腔的激光同步辐射及其光子产额进行了讨论和计算。结果表明:当超腔镜面的反射率等于99.99%时，在超腔碰撞点处的总光子数密度大约是初始激光束在碰撞点处光子数密度的5 000倍，对应康普顿垂直散射的光子产额大约是电子束与初始激光束在碰撞点处发生康普顿垂直散射时的5 000倍。     

酒石酸添加对Ce3+激活硼锗酸盐闪烁玻璃发光性能的影响

本文采用传统的高温熔融法在空气气氛中制备了无色透明的Ce³⁺激活硼锗酸盐闪烁玻璃，该硼锗酸盐闪烁玻璃中GeO₂和Gd₂O₃总含量为85%,测得其密度在5.82 g/cm³左右，且在450～800 nm线性透过率可达80%以上。加入少量的酒石酸(C₄H₆O₆)作为强还原剂以减少Ce⁴⁺的产生，研究了在不同酒石酸添加量下硼锗酸盐闪烁玻璃中Ce³⁺在340 nm激发波长下的荧光衰减特性，确定了酒石酸的最佳添加量。此外，硼锗酸盐闪烁玻璃鲜有光产额方面的报道，本文测得制备的Ce³⁺激活硼锗酸盐闪烁玻璃的光产额为27 ph/MeV,且该高密度Ce³⁺激活硼锗酸盐闪烁玻璃具有最短约14.40 ns的衰减时间。可以预见，该高密度、快闪烁硼锗酸盐闪烁玻璃在高能物理和医学成像等领域有着巨大的发展潜力。     

Intermetallic Pt2Si：magnetron-sputtering preparation and electrocatalysis toward ethanol oxidation

Although most transition metals have been tested as the promoter to Pt for electrocatalysis toward fuel cell reactions,semi-conductor elements,such as Si,have hitherto not been examined.Here we report a simple synthesis of intermetallic Pt2Si electrode using magnetron sputtering and the electrocatalysis toward ethanol oxidation reaction（EOR）.In comparison to Pt,the intermetallic Pt2Si surface turns out to be much more active in catalyzing the EOR：the onset potential shifts negatively by 150 mV,and the current density at 0.6 V increases by a magnitude of one order.Such an enormous enhancement in EOR catalysis is ascribed to the promotion effects of Si,which can not only provide active surface oxygenated species to accelerate the removal of COads,but also strongly alter the electronic property of Pt,as clearly indicated by the core-level shift in XPS spectrum.     

Effect of Sputtering Parameters on Film Composition,Crystal Structure,and Coercivity of SmCo Based Films Deposited on Si （100） Substrates

The sputtering parameter mediated composition （SPMC） effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation （Sm2Co17→SmCo7→SmCo5） and the enhanced coercivity.     

Mo/Si aperiodic multilayer broadband reflective mirror for 12.5-28.5-nm wavelength range

Aperiodic molybdenum/silicon (Mo/Si) multilayer designed as a broadband reflective mirror with mean reflectivity of 10% over a wide wavelength range of 12.5-28.5 nm at incidence angle of 5° is developed using a numerical optimized method. The multilayer is prepared using direct current magnetron sputtering technology. The reflectivity is measured using synchrotron radiation. The measured mean reflectivity is 7.0% in the design wavelength range of 12.5-28.5 nm. This multilayer broadband reflective mirror can be used in extreme ultraviolet measurements and will greatly simplify the experimental arrangements.