高能电子照射绝缘样品的泄漏电流特性

建立了考虑电子散射、输运、俘获和自洽场的数值计算模型, 研究了高能电子束照射下绝缘厚样品的泄漏电流特性, 并采用一个实验平台测量了泄漏电流. 结果表明: 在电子束持续照射下, 电子总产额会下降; 由于电子在样品内部的输运, 样品近表面呈现微弱的正带电, 在样品内部呈现较强的负带电; 样品内部电子会向下输运形成电子束感生电流, 长时间照射下会形成泄漏电流; 随着照射, 泄漏电流逐渐增大并趋于稳定值; 泄漏电流随样品厚度的增大而减小, 随电子束能量、电子束电流的增大而增大. 关键词： 绝缘样品 泄漏电流 电子产额 数值模拟     

电介质/半导体结构样品电子束感生电流瞬态特性

电子束照射下电介质/半导体样品的电子束感生电流(electron beam induced current,EBIC)是其电子显微检测的重要手段.结合数值模拟和实验测量,研究了高能电子束辐照下SiO2/Si薄膜的瞬态EBIC特性.基于Rutherford模型和快二次电子模型研究电子的散射过程,基于电流连续性方程计算电荷的输运、俘获和复合过程,获得了电荷分布、EBIC和透射电流瞬态特性以及束能和束流对它们的影响.结果表明,由于电子散射效应,自由电子密度沿入射方向逐渐减小.由于二次电子出射,净电荷密度呈现近表面为正、内部为负的特性,空间电场在表面附近为正而在样品内部为负,导致一些电子输运到基底以及一些出射二次电子返回表面.SiO2与Si界面处俘获电子导致界面附近负电荷密度高于周围区域.随电子束照射样品内部净电荷密度逐渐降低,带电强度减弱.同时,负电荷逐渐向基底输运,EBIC和样品电流逐渐增大,电场强度逐渐减小.由于样品带电强度较弱,表面出射电流和透射电流随照射基本保持恒定.EBIC、透射电流及表面出射电流均随束流呈现近似正比例关系.对于本文SiO2/Si薄膜,透射电流随束能的升高逐渐增大并接近于束流值,EBIC在束能约15 keV时呈现极大值.     

低能电子束照射接地绝缘薄膜的负带电过程

为揭示低能电子束照射接地绝缘薄膜的负带电过程及其机理,建立了同时考虑电子散射与电子输运的计算模型,综合Monte Carlo方法和有限差分法进行了数值模拟,获得了内部空间电荷、泄漏电流和表面电位随电子束照射的演化规律.结果表明,入射电子因迁移、扩散效应会超越通常的散射区域产生负空间电荷分布,并经过一定的渡越时间后到达接地基板,形成泄漏电流,负带电暂态过程则随着泄漏电流的增加而趋于平衡.在平衡状态下,泄漏电流随电子束能量和电流而增大;薄膜净负电荷量和表面电位随膜厚而增加、随电子迁移率的增大而降低,随着电子束 关键词： 绝缘薄膜 电子束照射 带电效应 数值模拟     

非聚焦电子束照射SiO2薄膜带电效应

采用考虑电子散射、俘获、输运和自洽场的三维数值模型, 模拟了低能非聚焦电子束照射接地SiO₂薄膜的带电效应. 结果表明, 由于电子的迁移和扩散, 电子会渡越散射区域产生负空间电荷分布. 空间电荷呈现在散射区域内为正, 区域外为负的交替分布特性. 对于薄膜负带电, 电子会输运至导电衬底形成泄漏电流, 其暂态过程随泄漏电流的增加趋于平衡. 而正带电暂态过程随返回二次电子的增多而趋于平衡. 在平衡态时, 负带电表面电位随薄膜厚度、陷阱密度的增大而降低, 随电子迁移率、薄膜介电常数的增大而升高;而正带电表面电位受它们影响较小.     

空间多能电子辐照聚合物充电过程的稳态特性

空间同步轨道上多能电子辐照聚合物的充电过程及其稳态特性是研究和抑制通信卫星静电放电的基础.在同步电子散射-输运微观模型的基础上,采用具有10—400 keV积分能谱分布的多能电子辐照聚酰亚胺样品,进行了多能电子辐照聚酰亚胺充电过程的数值模拟,获得了空间电荷密度、空间电位、空间电场分布和聚合物样品参数条件下的表面电位和最大场强.结果表明,多能电子与样品发生散射作用并沉积在样品内形成具有高密度的电荷区域分布,同时在迁移和扩散的作用下输运至样品底部形成样品电流;充电达到稳态、电子迁移率较小时(小于10-10cm2·V-1·s-1),表面电位绝对值和充电强度随电子迁移率的降低明显加强,捕获密度较大时(大于1014cm-3),表面电位绝对值和充电强度随捕获密度的增大明显加强;聚合物样品厚度对表面电位和充电强度的影响大于电子迁移率、捕获密度和相对介电常数的影响.研究结果对于揭示空间多能电子辐照聚合物的充电现象及微观机理、提高航天器故障机理研究水平具有重要科学意义和价值.     

电子辐照电介质样品带电泄放弛豫特性研究

电子照射电介质材料的带电效应对介质微波部件的微放电现象有着重要影响.本文采用数值模拟的方法研究电子照射介质样品带电后的弛豫泄放过程.对入射电子与样品的相互作用考虑了弹性和非弹性碰撞过程,采用蒙特卡罗方法进行数值模拟;对沉积在样品内部的电荷泄漏过程则采用考虑电荷迁移、扩散以及俘获等过程的时域有限差分法进行处理.模拟了介质样品在带电泄放弛豫过程中的内部电荷和电位分布以及弛豫暂态特性,并分析了包括样品厚度、电子迁移率以及俘获密度在内的样品参数对泄放弛豫过程的影响.计算结果表明:在介质样品带电泄放的弛豫过程中,样品内部的总电荷量和表面电位逐渐减弱到一个与俘获密度直接相关的终态值;迁移率的增大会类线性比例地减少泄放时间常数,电荷泄放量随着样品厚度的增加呈现先增后减的趋势,而泄放量比随俘获密度增大从1近指数关系地减小为零.     

高功率脉冲电子束辐照SiO$lt;sub$gt;2$lt;/sub$gt;的光学和激光损伤性能

研究了不同剂量的60 kW高功率脉冲电子束辐照对高纯熔石英玻璃的微观结构、光学性能和激光损伤特性的影响规律. 光学显微图像表明, 辐照后熔石英样品由于热效应导致表面破裂, 裂纹密度和尺寸随辐照剂量增加而增大, 采用原子力显微镜分析表面裂纹的微观形貌, 裂纹宽度约1 um, 同时样品表面分布着大量尺寸约0.1–1μm的碎片颗粒. 吸收光谱测试表明, 所有样品均在394 nm处出现微弱的吸收峰, 吸收强度随着电子束辐照剂量增大呈现先增加后减小的趋势. 荧光光谱测试发现辐照前后样品均有3个荧光带, 分别位于460, 494和520 nm, 荧光强度随辐照剂量的变化趋势与吸收光谱一致. 利用355 nm激光研究了不同剂量电子束辐照对熔石英激光损伤阈值的影响, 结果表明熔石英的损伤阈值随着辐照剂量的增加而降低. 在剂量较低时, 导致熔石英激光损伤阈值下降的原因主要是色心缺陷; 剂量较高时, 导致损伤阈值降低的原因主要是样品表面产生的大量微裂纹和碎片颗粒对激光的调制和吸收. 关键词： 熔石英 电子束辐照 色心 激光损伤阈值     

单晶Nd3Co的低温压力效应研究

本文测量了沿Nd3Co单晶b轴在不同压力下电阻率随温度的变化,并对Nd3Co的居里温度和磁性转变场随压力的变化规律进行了研究.结果表明:随着压力的增大,样品剩余电阻率逐渐减小,居里温度平均每GPa 升高2.1 K,磁性转变场平均每GPa增大0.9 T.通过对结果的分析,可以认为压力增大使样品中原子间距变小,晶粒间的连接更加紧密,导致电阻率减小;原子间距变小,4f电子和传导电子间的关联增强,导致样品中Nd离子磁矩的转向变得困难,从而磁性转变场增大.     

高功率脉冲电子束辐照SiO_2的光学和激光损伤性能

研究了不同剂量的60 kW高功率脉冲电子束辐照对高纯熔石英玻璃的微观结构、光学性能和激光损伤特性的影响规律.光学显微图像表明,辐照后熔石英样品由于热效应导致表面破裂,裂纹密度和尺寸随辐照剂量增加而增大,采用原子力显微镜分析表面裂纹的微观形貌,裂纹宽度约1μm,同时样品表面分布着大量尺寸约0.1—1μm的碎片颗粒.吸收光谱测试表明,所有样品均在394 nm处出现微弱的吸收峰,吸收强度随着电子束辐照剂量增大呈现先增加后减小的趋势.荧光光谱测试发现辐照前后样品均有3个荧光带,分别位于460,494和520 nm,荧光强度随辐照剂量的变化趋势与吸收光谱一致.利用355 nm激光研究了不同剂量电子束辐照对熔石英激光损伤阈值的影响,结果表明熔石英的损伤阈值随着辐照剂量的增加而降低.在剂量较低时,导致熔石英激光损伤阈值下降的原因主要是色心缺陷;剂量较高时,导致损伤阈值降低的原因主要是样品表面产生的大量微裂纹和碎片颗粒对激光的调制和吸收.     

烧结温度对La0.1Sr0.9TiO3陶瓷热电性能的影响

利用传统固相反应方法, 分别在1440℃, 1460℃, 1480℃和1500℃烧结条件下, 制备了钙钛矿结构的La_0.1Sr_0.9TiO₃陶瓷样品. 样品的粉末X射线衍射结果显示, 不同烧结温度的La_0.1Sr_0.9TiO₃ 陶瓷样品均为单相的正交结构. 从样品的扫描电子显微照片来看, 随着烧结温度的增加, 平均晶粒尺寸逐渐增大. 在室温至800℃的测试温区, 测试了样品的电阻率和Seebeck系数, 系统地研究了不同烧结温度对样品热电性能的影响. 结果表明, 样品的电阻率在测试温区内随着测试温度的升高先略微降低, 然后逐渐升高;总体来看, 样品的电阻率随烧结温度的升高先增大后降低. 在测试温区内, Seebeck系数均为负值, 表明样品的载流子为电子; 随着测试温度的升高, Seebeck系数绝对值均有所增大;随烧结温度升高, Seebeck系数绝对值逐渐增大后显著降低. 1480℃制备的样品因其相对较低的电阻率和相对较高的Seebeck系数绝对值, 在165℃时得到最大的功率因子21 μW·K^-2·cm^-1.     

The positive charging effect of dielectric films irradiated by a focused electron beam

Space charge and surface potential profiles are investigated with numerical simulation for dielectric films of SiO₂ positively charged by a focused electron beam. By combining the Monte Carlo method and the finite difference method, the simulation is preformed with a newly developed comprehensive two-dimensional model including electron scattering, charge transport and trapping. Results show that the space charge is distributed positively, like a semi-ellipsoid, within a high-density region of electrons and holes, but negatively outside the region due to electron diffusion along the radial and beam incident directions. Simultaneously, peak positions of the positive and negative space charge densities shift outwards or downwards with electron beam irradiation. The surface potential, along the radial direction, has a nearly flat-top around the center, abruptly decreases to negative values outside the high-density region and finally increases to zero gradually. Influences of electron beam and film parameters on the surface potential profile in the equilibrium state are also shown and analyzed. Furthermore, the variation of secondary electron signal of a large-scale integration sample positively charged in scanning electron microscopic observation is simulated and validated by experiment.     

电子辐照聚合物带电特性多参数共同作用的数值模拟

电子辐照聚合物样品的带电特性是扫描电子显微镜成像、电子束探针微分析以及空间器件辐照效应等领域的一个重要研究课题. 通过建立基于蒙特卡罗方法的电子散射和时域有限差分法的电子输运的数值模型, 并采用高效的多线程并行计算, 模拟了电子非透射辐照聚合物样品的带电特性, 得到了带电稳态下的样品底部泄漏电流密度、表面负电位以及样品总电荷密度等带电特征量受入射电子能量、入射电流密度、样品材料的电子迁移率、样品厚度等相关参数共同作用的影响. 结果表明, 一个参数的变化使表面负电位增强时, 其他参数对负电位的影响将增强. 样品的带电稳态特征量在同一个电流平衡的模式下受参数影响的变化是单调的. 当电流平衡模式发生变化时, 如在入射电子能量较低的条件下, 样品内部的总电荷量会随着样品厚度的增大而先增加后减小, 出现局部极大值. 样品底部的泄漏电流密度随着入射电流密度的增大而近线性成比例地增大. 研究结果对于揭示电子辐照聚合物的带电规律及微观机理、预测不同条件下的样品带电状态具有重要科学意义.     

The surface potential of insulating thin films negatively charged by a low-energy focused electron beam

We report on the surface potential characteristics in the equilibrium state of the grounded insulating thin films of several 100 nm thickness negatively charged by a low-energy (<5 keV) focused electron beam, which have been simulated with a newly developed two-dimensional self-consistent model incorporating electron scattering, charge transport and charge trapping. The obtained space charge is positive and negative within and outside the region, respectively, where the electron and hole densities are greater than the trap density. Thus, the surface potential is relatively high around the center, then it decreases to a maximum negative value and finally tends to zero along the radial direction. The position of the maximum value is far beyond the range of e-beam irradiation as a consequence of electron scattering and charge transport. Moreover, a positive electric field can be generated near the surface in both radial and axial directions. The surface potential at center exhibits a maximum negative value in the condition of the ～2 keV energy non-penetrating e-beam in this work, which is supported by some existing experimental data in scanning electron microscopy. Furthermore, the surface potential decreases with the increase in beam current, trap density and film thickness, but with the decrease in electron mobility.     

Characteristics of charge and discharge of PMMA samples due to electron irradiation

In this study, using a comprehensive numerical simulation of charge and discharge processes, we investigate the formation and evolution of negative charge and discharge characteristics of a grounded PMMA film irradiated by a nonfocused electron beam. Electron scattering and transport processes in the sample are simulated with the Monte Carlo and the finite-different time-domain(FDTD) methods, respectively. The properties of charge and discharge processes are presented by the evolution of internal currents, charge quantity, surface potential, and discharge time. Internal charge accumulation in the sample may reach saturation by primary electron(PE) irradiation providing the charge duration is enough. Internal free electrons will run off to the ground in the form of leakage current due to charge diffusion and drift during the discharge process after irradiation, while trapped electrons remain. The negative surface potential determined by the charging quantity decreases to its saturation in the charge process, and then increases in the discharge process. A larger thickness of the PMMA film will result in greater charge amount and surface potential in charge saturation and in final discharge state, while the electron mobility of the material has little effects on the final discharge state. Moreover,discharge time is less for smaller thickness or larger electron mobility. The presented results can be helpful for estimating and weakening the charging of insulating samples especially under the intermittent electron beam irradiation in related surface analysis or measurement.     

Self-consistent charging in dielectric films under defocused electron beam irradiation

We clarify the transient and equilibrium charging characteristics of grounded dielectrics due to low-energy defocused electron beam irradiation by a three-dimensional self-consistent simulation model. The model incorporates the electron scattering, transport and trapping. Results show that some electrons can arrive at the grounded substrate due to the internal field and density gradient, forming the leakage current. The transient charging process tends to equilibrium as the surface potential decreases and the leakage electron current increases. The positive and negative space charges are distributed alternately along the beam incident direction. In the equilibrium state, the surface potential and leakage electron current decrease to stable values with increasing film thickness and the trap density, but with decreasing electron mobility. Moreover, the surface potential of the dielectric thin film exhibits a maximum negative value with variation of the beam energy; for example, under the condition of the film thicknesses 0.5 μm and 2 μm, the maximum negative values of surface potentials are -13 V and -98 V in beam energies 2 keV and 3.5 keV, respectively. However, for the thick film, the surface potential decreases with the increase in beam energy.     

Charging dynamics of a polymer due to electron irradiation： A simultaneous scattering-transport model and preliminary results

<正>We present a novel numerical model and simulate preliminarily the charging process of a polymer subjected to electron irradiation of several 10 keV.The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons.The dynamic spatial distribution of charges is obtained and validated by existing experimental data.Our simulations show that excess negative charges are concentrated near the edge of the electron range.However,the formed region of high charge density may extend to the surface and bottom of a kapton sample,due to the effects of the electric field on electron scattering and charge transport,respectively.Charge trapping is then demonstrated to significantly influence the charge motion.The charge distribution can be extended to the bottom as the trap density decreases.Charge accumulation is therefore balanced by the appearance and increase of leakage current.Accordingly,our model and numerical simulation provide a comprehensive insight into the charging dynamics of a polymer irradiated by electrons in the complex space environment.