基于耦合声场建模的膨胀腔消声器声学性能分析及试验

针对圆柱形膨胀腔消声器三维建模及声学性能分析问题, 提出一种基于切比雪夫变分原理的耦合声场建模方法, 建立三维圆柱形膨胀腔消声器理论模型并搭建试验台架, 传递损失试验结果验证了理论模型的准确性. 将膨胀腔消声器内部声场分解为多个子声场, 基于子声场间压力与质点振速连续性条件, 推导声场耦合变分公式, 构建子声场拉格朗日泛函. 将子声场声压函数展开为切比雪夫-傅里叶级数形式, 通过瑞利-里兹法求解膨胀腔消声器频率、声压响应及传递损失. 计算并对比分析扩张比、扩张腔长度、进出口管偏置对膨胀腔消声器消声性能的影响. 结果表明: 扩张比增大会有效提高消声器在低频段的消声性能, 进出口管的偏置对消声器消声性能影响很小.     

Insights into the efficient charge separation over Nb2O5/2D-C3N4 heterostructure for exceptional visible-light driven H2 evolution

Two-dimensional carbon nitride(2 D-C₃ N₄)nanosheets are promising materials in photocatalytic water splitting,but still suffer from easy agglomeration and fast photogene rated electron-hole pairs recombination.To tackle this issue,herein,a hierarchical Nb₂ O₅/2 D-C₃ N₄ heterostructure is precisely constructed and the built-in electric field between Nb₂O₅ and 2 D-C₃ N₄ can provide the driving force to separate/transfer the charge carriers efficiently.Moreover,the strongly Lewis acidic Nb₂O₅ can adsorb TEOA molecules on its surface at locally high concentrations to facilitate the oxidation reaction kinetics under irradiation,resulting in efficient photogene rated electrons-holes separation and exceptional photocatalytic hydrogen evolution.As expected,the champion Nb₂O₅/2 D-C₃N₄ heterostructure achieves an exceptional H2 evolution rate of 31.6 mmol g^-1 h^-1,which is 213.6 times and 4.3 times higher than that of pristine Nb₂O₅ and2 D-C₃N₄,respectively.Moreover,the champion heterostructure possesses a high apparent quantum efficiency(AQE)of 45.08%atλ=405 nm and superior cycling stability.Furthermore,a possible photocatalytic mechanism of the energy band alignment at the hetero-interface is proposed based on the systematical characterizations accompanied by density functional theory(DFT)calculations.This work paves the way for the precise construction of a high-quality heterostructured photocatalyst with efficient charge separation to boost hydrogen production.     

基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。     

水热法制备二氧化锡/钨酸铋复合光催化材料及其催化活性研究

本文用水热法制备了正交晶系的纳米球状结构的二氧化锡和正交晶系的由片状聚集成球状结构的钨酸铋,并且对二者进行了复合,制备出了二氧化锡/钨酸铋复合光催化材料。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、比表面积测试仪(BET)、紫外可见分光光度计等技术对复合样品的结构、形貌、比表面积、孔容孔径和光学性质进行了表征。用碘钨灯模拟太阳光,分别以二氧化锡、钨酸铋和二氧化锡/钨酸铋复合材料为催化剂降解罗丹明B(RhB),研究所制备的二氧化锡/钨酸铋复合材料的光催化活性。光催化90 min时二氧化锡、钨酸铋和二氧化锡/钨酸铋对罗丹明B的降解率分别是9%、22%和30%。实验结果表明,在可见光下,二氧化锡/钨酸铋复合材料的光催化活性要高于单一的二氧化锡和钨酸铋。     

A Triphenylphosphonium Functionalized AIE Conjugated Macrocyclic Tetramal&mide for Mitochondrial-targeting Bioimaging

Developme nt of subcellular orga nelle-targeted bioimagi ng probes is of great imports nee in the field of early detection of diseases and exploring the behaviors of subcellular organelles.Herein,we present a triphenyIphosphonium functionalized conjugated macrocyclic tetramaleimide(TPP-CMT)as a mitochondrial-targeting bioimaging probe.The core of TPP-CMT is obtained by connecting two pyrenes and two benzenes through four maleimides.This unique structure endows TPP-CMT with exceptional far red/near-i nfirared aggregati on-induced emissi on(FR/NIR-AIE)characteristics.TPP-CMT is an excelle nt fluoresce nt emitter in most solve nts and eve n in solid states.The qua ntum yield of TPP-CMT was higher tha n 27% when dissolved in comm on middle-polarity orga nic solve nt and this value remained at 28.2% in its solid state.The in troducti on of four triphe ny Iphosph onium on maleimide positions endows TPP-CMT with mitochondrial-targeting ability.Thanks to the FR/NIR-AIE characteristics and the mitochondri-al-targeti ng ability,this well-desig ned fluoresce nt probe was successfully employed for mitochondrial targeti ng bioimaging of HeLa and HepG2 cells.     

嵌锁式CFRP方形蜂窝夹芯梁低速冲击响应及失效机理

采用嵌锁组装工艺制备了碳纤维/树脂基复合材料方形蜂窝夹芯梁，实验研究了低速冲击载荷下简支和固支夹芯梁的动态响应及失效机理，获得了不同冲击速度下夹芯梁的失效模式，分析了其损伤演化过程和失效机理，探讨了冲击速度、边界条件、面板质量分布以及槽口方向等因素对夹芯梁破坏模式及承载能力的影响。研究结果表明，芯材长肋板槽口方向对夹芯梁的失效模式有较大影响，槽口向上的芯材跨中部分产生了挤压变形，而槽口向下的芯材跨中部分槽口在拉伸作用下出现了沿槽口开裂失效，继而引起面板脱粘和肋板断裂；同等质量下，较厚的上面板设计可以提高夹芯梁的抗冲击能力，冲击速度越大，夹芯梁的峰值载荷和承载能力越高；固支边界使得夹芯梁的后失效行为呈现出明显的强化效应，在夹芯梁跨中部分发生初始失效后出现了后继的固支端芯材和面板断裂失效模式。     

大展弦比气弹机翼柔性非线性变形的气动力效应分析与风洞试验

从飞行器刚弹耦合动力学模型出发，引入柔性机翼准定常假设，建立大柔性飞行器非线性静气动弹性气动力方程，利用非线性迭代求解思路模拟了柔性飞行器的静气动弹性响应行为，开展了大展弦比飞机静气动弹性风洞试验验证，采用气动力有限基本解与机翼的耦合计算，发现了大柔性飞机大变形状态下载荷及结构变形形式随风速的变化规律.传统基于小变形假设的线性分析方法和刚体分析由于无法考虑气动面随结构变形的曲面气动力因素和结构变形后的非线性刚度特性，均与风洞试验存在一定的误差.对于大展弦比柔性飞机的非线性静气动弹性分析十分必要.      

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.