Imprint lithography of pyramidal photonic pillars using hydrazine etching

An inexpensive method to produce a pyramidal-type 2D photonic structures in the silicon substrate was proposed. The method is based on the combination of imprint lithography and wet Si1 0 0 etching in water solution of hydrazine, which etches 1 1 1 faces much more slowly than others. Thermally grown SiO₂ mask for the hydrazine etching was used, because single Al mask cannot be well bonded to the substrate and tends to peel during the etching. It was revealed that transmittance in the infrared spectrum region of the patterned silicon decreases by about five times compared with that of flat silicon substrate and this decrease is almost independent of the angle of the incident beam. In the infrared region, decrease of transmittance of the patterned samples is directly proportional to the wave number. The shape of formed pyramids has strong influence on the transmittance. Decrease of the transmittance is much more rapid and larger in the case of sharpless pillars.     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Microstructure effect on microtopography of chemically etched α + β Ti alloys

Microstructure effect on chemical etching behavior of the annealed Ti-6Al-4V and Ti-3Al-2.5V titanium (Ti) alloys was compared with that of unalloyed commercially pure titanium. The microstructural evolution of structure phases after annealing the titanium and its alloys at temperature near and above β transus and followed by furnace cooling to room temperature was studied using optical microscope, scanning electron microscope and X-ray diffraction techniques. The microstructure study illustrates that the heat treatment enhanced partitioning effect allows extensive formation of hemispherical and near spherical pits roughened surface to be readily acquired by chemically etching the annealed α + β titanium alloys. The kinetics of the chemical etching reaction process show a linear dependence on time. The annealed α + β titanium alloys that exhibit relatively lower weight loss and thickness reduction rate illustrate less chemical activity than the annealed unalloyed titanium.     

Microstructure array on Si and SiOx generated by micro-contact printing, wet chemical etching and reactive ion etching

A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications.     

Angular response characteristic of pyramid shape fast neutron dosimeter using CR-39 films

CR-39 is a highly sensitive etched track detector for neutron monitoring and dosimetry applications but its dose equivalent response is strongly direction dependent with respect to the incident neutrons. This is considered to be a major drawback for their use. In the present study, an attempt has been made to develop a pyramid shaped dosimeter, which consists of polyethylene material of thickness 1 mm with the provision to hold three CR-39 films at an angle of 35° to each other. The response of CR-39 in this configuration under optimum electrochemical etching at elevated temperature have been found nearly angular independent and therefore the dosimeter can be used for neutron monitoring, i.e. personnel as well as area monitoring.     

Fabricating blazing grating on NGD by photochemical etching

This paper tries to introduce the reader to the method of using photochemical re-action to copy holographic optical elements(HOEs)in relief.The holographic blazing gratingso copied is groove depth adjustable phase modulability enlarged through copying and 3.3times the diffraction efficiency(DE)of the original grating.It is expected that the newmethod will lead to the mass production of the light-weight HOEs at low cost.     

软X射线显微术Si_3N_4薄膜窗口的研制

介绍了在软Ｘ－射线显微术研究领域中有重要应用的Ｓｉ_３Ｎ_４薄膜窗口的实验室制作方法，并形成一套独特制备工艺，Ｓｉ_３Ｎ_４薄膜窗口的研制成功推动了我国软Ｘ射线显微术研究的发展。     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.     

微流控层流技术的研究

基于微型通道自身的层流特点而发展起来的多相层流技术,从最初的液-液微萃取开始,由于其结构加工简单、操作方便和分析功能强大,已逐渐发展成为一种加工分析方法,为微流控分析的研究应用打开了一个崭新的局面。本文概述了层流的基本原理,总结了近10年来在这方面的研究,包括层流界面间的分子扩散、转移现象和化学反应,以及层流刻蚀加工技术及其在制备纳米材料和在生命医学方面的应用。具体介绍了应用层流技术进行微芯片的加工制作,微型反应器的制备,离子、分子的分离分析,聚合物薄膜的形成和应用,微通道内有机合成反应的控制,溶液的浓度梯度控制以及在免疫检测中的应用,对细胞、生物大分子的操作控制,以及对生物试剂的预处理分析等。