Superconductivity and unconventional density waves in vanadium-based kagome materials AV3Sb5

Recently, the discovery of vanadium-based kagome metal AV₃Sb₅ (A= K, Rb, Cs) has attracted great interest in the field of superconductivity due to the coexistence of superconductivity, non-trivial surface state and multiple density waves. In this topical review, we present recent works of superconductivity and unconventional density waves in vanadium-based kagome materials AV₃Sb₅. We start with the unconventional charge density waves, which are thought to correlate to the time-reversal symmetry-breaking orders and the unconventional anomalous Hall effects in AV₃Sb₅. Then we discuss the superconductivity and the topological band structure. Next, we review the competition between the superconductivity and charge density waves under different conditions of pressure, chemical doping, thickness, and strains. Finally, the experimental evidence of pseudogap pair density wave is discussed.     

Dirac states from p_(x,y) orbitals in the buckled honeycomb structures:A tight-binding model and first-principles combined study

Dirac states composed of p_(x,y) orbitals have been reported in many two-dimensional(2 D) systems with honeycomb lattices recently. Their potential importance has aroused strong interest in a comprehensive understanding of such states.Here, we construct a four-band tight-binding model for the p_(x,y)-orbital Dirac states considering both the nearest neighbor hopping interactions and the lattice-buckling effect. We find that p_(x,y)-orbital Dirac states are accompanied with two additional narrow bands that are flat in the limit of vanishing π bonding, which is in agreement with previous studies. Most importantly, we analytically obtain the linear dispersion relationship between energy and momentum vector near the Dirac cone. We find that the Fermi velocity is determined not only by the hopping through π bonding but also by the hopping through σ bonding of p_(x,y) orbitals, which is in contrast to the case of p_z-orbital Dirac states. Consequently, p_(x,y)-orbital Dirac states offer more flexible engineering, with the Fermi velocity being more sensitive to the changes of lattice constants and buckling angles, if strain is exerted. We further validate our tight-binding scheme by direct first-principles calculations of model-materials including hydrogenated monolayer Bi and Sb honeycomb lattices. Our work provides a more in-depth understanding of p_(x,y)-orbital Dirac states in honeycomb lattices, which is useful for the applications of this family of materials in nanoelectronics.     

表面原子操纵与物性调控研究进展

利用扫描隧道显微镜可以在单原子层次上对材料进行操纵,改变其结构与特性,实现原子级结构与物性的精准调控.近年来,扫描隧道显微镜原子操纵技术被广泛用于新型低维材料的精准构筑与物性调控.本文主要介绍应用原子操纵技术对低维材料物性调控的最新研究进展,总结了4种主要探针操纵模式:1)探针局域电场模式; 2)调节探针-样品垂直间距模式; 3)无损形态调控模式; 4)可控裁剪刻蚀模式.通过这些探针操纵模式引入局域的电场、磁场、应力场等,实现在单原子层次上对低维材料的电荷密度波、近藤效应、非弹性隧穿效应、马约拉纳束缚态等新奇物性进行精准地调控.     

超高真空构筑新型二维材料及其异质结构

由于量子受限效应,二维材料表现出很多三维材料所不具备的优异电学、光学、热学以及力学性能,为研究人员所关注.材料的优异物性离不开高质量材料的制备,超高真空环境可以减少杂质分子的污染与影响,提高二维材料的质量与性能.本文介绍基于超高真空环境的新型二维原子晶体材料的原位制备方法,包括利用分子束外延构筑新型二维材料、利用石墨烯插层构筑新型二维原子晶体材料异质结构以及利用扫描探针原位操纵构筑二维材料异质结构三大类.文章回顾利用这三类方法构筑的二维材料及其物理化学性质,比较三种方法各自的优势与局限性,对未来二维材料制备提供一定的指引.     

Substrate tuned reconstructed polymerization of naphthalocyanine on Ag(110)

The linkage structures between monomers make great influence on the properties of polymers.The synthesis of some special linkage structures can be challenging,which is often overcome by employing special reaction conditions.Here,we build dihydropentalene linkage in poly-naphthalocyanine on Ag(110)surface.Scanning tunneling microscopy(STM)and non-contact atomic force microscopy(nc-AFM)measurements confirm the dihydropentalene linkage structure and a possible formation path with reconstruction steps is proposed.The controlled experiment on Ag(100)surface shows no dihydropentalene structures formed,which indicates the grooved substrate is necessary for the reconstruction.This work provides insights into the surface restricted reactions that can yield special structures in organic polymers.     

Laser-induced phase conversion of n-type SnSe2 to p-type SnSe

We report a facile phase conversion method that can locally convert n-type SnSe₂ into p-type SnSe by direct laser irradiation. Raman spectra of SnSe₂ flakes before and after laser irradiation confirm the phase conversion of SnSe₂ to SnSe. By performing the laser irradiation on SnSe₂ flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe₂ and results in the phase conversion of SnSe₂ to SnSe. Lattice-revolved transmission electron microscope images of SnSe₂ flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe₂ flakes, a pattern with SnSe₂/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.     

Robustness of the unidirectional stripe order in the kagome superconductor CsV3Sb5

V-based kagome materials AV₃Sb₅ (A=K, Rb, Cs) have attracted much attention due to their novel properties such as unconventional superconductivity, giant anomalous Hall effect, charge density wave (CDW) and pair density wave. Except for the 2a₀×2a₀ CDW (charge density wave with in-plane 2×2 superlattice modulation) in AV₃Sb₅, an additional 1×4 (4a₀) unidirectional stripe order has been observed at the Sb surface of RbV₃Sb₅ and CsV₃Sb₅. However, the stability and electronic nature of the 4a₀ stripe order remain controversial and unclear. Here, by using low-temperature scanning tunneling microscopy/spectroscopy (STM/S), we systematically study the 4a₀ stripe order on the Sb-terminated surface of CsV₃Sb₅. We find that the 4a₀ stripe order is visible in a large energy range. The STM images with positive and negative bias show contrast inversion, which is the hallmark for the Peierls-type CDW. In addition, below the critical temperature about 60 K, the 4a₀ stripe order keeps unaffected against the topmost Cs atoms, point defects, step edges and magnetic field up to 8 T. Our results provide experimental evidences on the existence of unidirectional CDW in CsV₃Sb₅.     

有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储

采用扫描隧道显微镜(STM)在3-phenyl-1-ureidonitrile(PUN)有机单体薄膜上进行了超高密度信息存储的研究.通过在STM针尖和高定向裂解石墨(HOPG)衬底之间施加一系列的电压脉冲,在薄膜上写入了一个稳定的5×6信息点阵,信息点的大小是0.8nm.电流电压(I-V)曲线表明,施加电压脉冲前后薄膜的导电性质发生了变化.信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合,从而导致薄膜由高电阻态向低电阻态转变. 关键词： 超高密度信息存储 有机薄膜 扫描隧道显微镜(STM)     

Structural transformation of Ge dimers on Ge（001） surfaces induced by bias voltage

Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between （2×1） and c（4×2） structures on Ge（001） surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ce islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the nacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.     

磁性钴纳米晶的二维自组装

在两种表面活性剂存在下，采用高温醇还原，合成出单分散、平均颗粒尺寸为14±19nm，直径标准偏差小(～18%)的磁性金属Co纳米晶.利用x射线衍射、紫外吸收光谱、x射线光电子能谱及透射电子显微镜对其结构和表面价态进行了分析.并将磁性金属Co纳米晶自组织形成有序的二维(2D)六方紧密堆积结构. 关键词： Co纳米晶 单分散 自组装