Laser-induced phase conversion of n-type SnSe2 to p-type SnSe |
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| Institution: | 1.Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;3.CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;4.Songshan Lake Materials Laboratory, Dongguan 523808, China |
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| Abstract: | We report a facile phase conversion method that can locally convert n-type SnSe2 into p-type SnSe by direct laser irradiation. Raman spectra of SnSe2 flakes before and after laser irradiation confirm the phase conversion of SnSe2 to SnSe. By performing the laser irradiation on SnSe2 flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe2 and results in the phase conversion of SnSe2 to SnSe. Lattice-revolved transmission electron microscope images of SnSe2 flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe2 flakes, a pattern with SnSe2/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region. |
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| Keywords: | SnSe2 SnSe laser irradiation local phase conversion |
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