Performance of the plugged-in ^22Na based slow positron beam facility

The Beijing intense slow positron beam facility is based on the 1.3GeV linac of Beijing Electron-Positron Collider (BEPC) aiming to produce mono-energetic intense slow positron beam for material science investigation. The plugged-in ²²Na based slow positron beam section has been newly constructed to supply continuous beam time for the debugging of positron annihilation measurement stations and improve the Beijing intense slow positron beam time using efficiency. Performance testing result of the plugged-in ²²Na based slow positron beam facility are reviewed in this paper, with the measurement of the beam transport efficiency, the view of beam spot, the adjustment of beam position, the measurement of beam intensity and energy spread etc. included.     

Physical design of positronium time of flight spectroscopy apparatus

Positronium time of flight spectroscopy（Ps-TOF）is an effective technique for porous material research.It has advantages over other techniques for analyzing the porosity and pore tortuosity of materials.This paper describes a design for Ps-TOF apparatus based on the Beijing intense slow positron beam,supplying a new material characterization technique.In order to improve the time resolution and increase the count rate of the apparatus,the detector system is optimized.For 3 eV o-Ps,the time broadening is 7.66 ns and the count rate is 3 cps after correction.     

水蒸气退火多孔硅发光性能的正电子谱学研究

使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E′γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.     

Performance assessment of CsI(Tl) screens on varioussubstrates for X-ray imaging

Thallium-doped cesium iodide (CsI(Tl)) screens are widely used in X-ray imaging devices because of the columnar structure of the CsI(Tl) layer, but few reports focus on the optical role of the substrate in the screen system. In this paper, four substrates including fused silica (SiO₂), silver-film coated SiO₂, graphite (C) and fiber optic plate (FOP) are used to fabricate CsI(Tl) screens by thermal evaporation. Their imaging performance is evaluated by relative light output (RLO), modulation transfer function (MTF), normalized noise power spectrum (NNPS) and noise equivalent quanta (NEQ). The results reveal that although CsI(Tl) film on graphite plate yields images with the lowest light output, it presents relatively higher spatial resolution and better signal-to-noise characteristics. However, films on SiO₂ plate obtain low MTF but high NNPS curves, whether they are coated with silver film or not. Furthermore, scintillation screens on FOP have bright images with low NNPS and high NEQ, but have the lowest MTF. By controlling the substrate optical features, CsI(Tl) films can be tailored to suit a given application.     

Identification of pore size in porous SiO2 thin film by positron annihilation

Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75：25 at.-% （A175Si25） target with the radiofrequency （RF） power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the A1 cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is τ = 7.80 ns. With these values of lifetime, RTE （Rectangular Pore Extension） model has been used to analyze the pore size.     

Performance evaluation of CsI screens for X-ray imaging

Cs I film has been one of the most extensively used scintillators for indirect X-ray imaging because of its needle-like micro-structure. The purpose of this paper is to investigate the imaging performance of Cs I screen as a function of thickness and radiation quality. Four multilayer scintillation screens with microcolumnar Cs I:Tl film(thicknesses of 50 μm, 100 μm, 200 μm and 300 μm) included were prepared and coupled to an optical imaging sensor. The modulation transfer function(MTF), normalized noise power spectrum(NNPS) and detective quantum efficiency(DQE) of these screens were evaluated based on the standard IEC 62220-1, and the results indicated that,in the medium spatial frequency range(1–6 lp/mm), the MTF of Cs I screens with the same thickness was lower when the incident X-ray photon energy was higher, possibly owing to scattering and K-fluorescence re-absorption effects. The NNPS in the higher spatial frequency range(above 8 lp/mm) is dominated by stochastic noise while the entrance surface air Kerma(ESAK) decreases. For 100 μm, 200 μm and 300 μm thick Cs I screens, the DQE under RQA7 and RQA9 is lower than that under RQA3 and RQA5 due to low absorption efficiency.     

飞秒激光驱动X射线源中超热电子与靶相互作用研究

飞秒激光与靶相互作用产生超热电子,随后超热电子与靶原子碰撞,通过kα、kβ等散射过程,可辐射高亮度、飞秒级X射线,在原子与分子物理、生物及医学等领域均有广泛的应用前景.论文首先对飞秒激光驱动X射线源的发展进行简要叙述,然后对X射线源中的超热电子与靶相互作用进行研究.超热电子的产生由靶材对光脉冲的非碰撞吸收机制决定,X射线的产生由超热电子决定.研究超热电子、靶参数对X射线产额的影响,确定最佳参数值,可指导驱动激光脉冲参数的选择,以获得更大的X射线光子产额.使用蒙特卡洛模拟方法可研究超热电子动能及入射角、靶材(Cu靶)厚度对靶材上、下表面X射线辐射光子产额的影响,分析确定最佳超热电子动能及最佳靶厚.驱动激光强度与超热电子动能的定标关系表明：需要合理选择驱动激光参数,使真空加热机制主导超热电子产生过程,以在合适的激光脉冲强度下获得最大X射线光子产额.     

Defect types and room temperature ferromagnetism in N-doped rutile TiO2single crystals

The magnetic properties and defect types of virgin and N-doped TiO2 single crystals are probed by superconducting quantum interference device （SQUID）, X-ray photoelectron spectroscopy （XPS）, and positron annihilation analysis （PAS）. Upon N doping, a twofold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancy, rather to unpaired 3d electrons in Ti3＋, arising from titanium vacancies and the replacement of O with N atoms in the futile structure. The production of titanium vacancies can enhance the room temperature ferromagnetism （RTFM）, and substitution of O with N is the onset of ferromagnetism by inducing relatively strong ferromagnetic ordering.     

Defect types and room-temperature ferromagnetism in undoped rutile TiO2 single crystals

Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO2 single crystals when a magnetic field is applied parallel to the sample plane.By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy,Ti3+-V O defect complexes(or clusters) have been identified in annealed crystals at a high vacuum.We elucidate that the unpaired 3d electrons in Ti3+ ions provide the observed room-temperature ferromagnetism.In addition,excess oxygen ions in the TiO2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments.     

不同气氛下多孔硅中电子偶素湮没行为研究

使用正电子湮没谱学方法,在不同气氛下对电化学腐蚀法制备的多孔硅中电子偶素的湮没行为进行了系统的研究.正电子湮没寿命谱测试结果表明,样品中存在长达40 ns的电子偶素湮没成分,并且进入多孔硅膜层的正电子约有80%形成电子偶素,具有非常高的电子偶素产额;在氧气气氛下,由于气体导致o-Ps发生自旋转化猝灭是使多孔硅样品中电子偶素寿命缩短的主要原因.结合正电子寿命-动量关联谱测量结果,分析了不同气氛下多孔硅样品中电子偶素湮没寿命及动量变化关系,讨论了多孔硅中电子偶素的湮没机理以及气氛对孔径计算理论模型的影响. 关键词： 电子偶素 正电子湮没谱学方法 多孔硅