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Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 下载免费PDF全文
This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances. 相似文献
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A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits. 相似文献
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理论研究了平面电磁波通过n型重掺GaAs薄膜的透射谱.当GaAs薄膜两表面刻上亚波长的周期性沟槽结构时,透射谱在中红外波段出现了异常的透射增强现象.把这一现象归因于表面等离子体模式和波导模式的耦合.通过优化结构参数可以得到最大的透射效率.此外,发现随着掺杂浓度的升高,透射谱线中的透射峰逐渐向高频方向移动,最优化后透射峰值随掺杂浓度的升高而逐渐降低.这是由于掺杂浓度的改变,导致了不同的等离子体频率和电子碰撞频率,从而影响了激发模式和薄膜对电磁波的吸收.
关键词:
表面等离子体
掺杂半导体
增强透射
掺杂调制 相似文献
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Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters 下载免费PDF全文
An asymmetric laser heterostructure is developed to improve the beam properties of GaSb-based diode lasers with no degradation in laser parameters.Employing the semivectorial finite difference method,the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically.After carefully design,a particular asymmetric laser structure is proposed.Its beam divergence in the fast axis is reduced from 61° to 34° compared with that of the broad-waveguide structure.The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure. 相似文献
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金膜上亚波长周期性孔阵的模拟与研制 总被引:1,自引:0,他引:1
分析了980 nm波长的光在透过制作在金膜上的亚波长周期性孔阵时的透射增强现象.通过建立中心带缺陷孔的三角晶格的孔阵模型,并采用三维时域有限差分方法对该模型的透射情况进行模拟分析.结果表明通过优化孔阵周期参数可以对特定波长的光实现一定程度的选择透过性.当孔阵周期为450 am,中心缺陷孔径为400 nm,孔阵中单个孔孔径为150 nm时,980 nm波跃光透过该孔阵时具有明显的透射增强效应,并且距孔阵表面3μm的远场光斑尺寸被局限在亚波长尺度(880 nm).研究了使用聚焦离子束在金膜上制备孔阵的工艺,成功研制了与没计尺寸一致的孔阵.这种孔阵可以集成在980 nm垂直腔面发射激光器上,用于改善器件的远场光学特性. 相似文献