| Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters |
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| 引用本文： | 王永宾,徐云,宋国峰,陈良惠.Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters[J].中国物理 B,2012,21(8):84208-084208. |
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| 作者姓名： | 王永宾 徐云 宋国峰 陈良惠 |
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| 作者单位： | Laboratory of Nano-Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences |
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| 基金项目： | Project supported by the Beijing Municipal Natural Science Foundation, China （Grant No. 4112058）. |
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| 摘 要： | An asymmetric laser heterostructure is developed to improve the beam properties of GaSb-based diode lasers with no degradation in laser parameters.Employing the semivectorial finite difference method,the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically.After carefully design,a particular asymmetric laser structure is proposed.Its beam divergence in the fast axis is reduced from 61° to 34° compared with that of the broad-waveguide structure.The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure.
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| 关 键 词： | broad-waveguide structure asymmetric heterostructure beam divergence optical confinement factor |
| 收稿时间： | 2011-12-20 |
Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters |
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| Wang Yong-Bin,Xu Yun,Song Guo-Feng,Chen Liang-Hui.Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters[J].Chinese Physics B,2012,21(8):84208-084208. |
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| Authors: | Wang Yong-Bin Xu Yun Song Guo-Feng Chen Liang-Hui |
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| Affiliation: | Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Asymmetric laser heterostructure is developed to improve beam properties of GaSb-based diode lasers with no degradation in laser parameters. Employing the semivectorial finite difference method, the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically. After carefully designing, a particular asymmetric laser structure is proposed. Its beam divergence in the fast axis is reduced from 61° to 34°compared with that of the broad-waveguide structure. The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure. |
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| Keywords: | broad-waveguide structure asymmetric heterostructure beam divergence optical confinement factor |
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