Effects of silica nanoparticle addition on polymer semiconductor wettability and carrier mobility in solution‐processable organic transistors on hydrophobic substrates

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3‐hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field‐effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin‐coating technique, leading to higher mobility compared with P3HT FETs fabricated on non‐modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution‐processed P3HT/SNPs FETs on ODTS‐modified substrates exhibit a field‐effect mobility of 1.3 × 10^?2 cm² V^?1 s^?1, which is almost comparable to that of P3HT FETs without SNPs (2.1 × 10^?2 cm² V^?1 s^?1). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 509–516     

Inducing a high twisted conformation in the polyimide structure by bulky donor moieties for the development of non-volatile memory

Two polyimides, PI(DAT-6FDA) and PI(DAPT-6FDA), from N-(2,4-diaminophenyl)-N,N-diphenylamine (DAT) or N-(4-(2′,4′-diaminophenoxy)phenyl-N,N-diphenylamine (DAPT) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) were prepared to clarify the structural effect on the resulting memory properties. The memory device based on PI(DAT-6FDA) showed an unstable volatile behavior, while the device based on PI(DAPT-6FDA) with a more bulky donor (D) unit exhibited a stable non-volatile FLASH type memory characteristic with a long retention time over 10⁴ s. The theoretical simulation based on the density functional theory (DFT) suggested that the greater distinct charge separation between the ground and charge transfer (CT) states led to a highly stable memory behavior. Also, it was clarified that PI(DAPT-6FDA) had a highly twisted conformation compared to PI(DAT-6FDA) in the ground state, and a more twisted dihedral angle between the D and acceptor (A) units was induced in the CT state, which led to the non-volatile memory characteristic.     

Noise analysis of an electro-optic sensor system

Optical Review - This paper describes the noise analysis of an electro-optic (EO) sensor system based on experimental and simulation results. We developed a polarization simulator of the EO sensor...     

Multinuclear magnetic resonance studies of five silver(I) trinuclear pyrazolate complexes

Structural Chemistry - Experimental multinuclear determination of the chemical shifts, especially 15N and 109Ag, of five silver(I) trinuclear pyrazolate complexes, (PzAg)3, coupled with ZORA...     

Charge density dependence of solution and gel behaviors of maleic acid-containing polyelectrolytes

Two kinds of polyelectrolytes containing maleic acid component (MA copolymers), i.e., poly(styrene-alt-maleic acid) (PSMA) and poly(vinyl methyl ether-alt-maleic acid) (PVMEMA), were investigated on their polymer chain dimensional changes in solution, and also in gel phase for the latter, as a function of the polymer charge density or pH of the (immersing) solution. Being different from common poly(carboxylic acid)s such as poly(acrylic acid), both of the MA copolymers showed maximum in the reduced viscosity or the gel size with increasing the charge density or the solution pH. The maximum in the reduced viscosity was much more significant for PSMA than PVMEMA. To see if intramolecular hydrogen bond between a pair of dissociated and undissociated carboxyl groups in an MA residue contributes to the emergence of the peak or not, similar measurements were performed also in the presence of concentrated urea (5 M). Almost the same values were obtained up to the peak position for the reduced viscosity and the gel swelling degree with increasing pH of the (immersing) solutions, which strongly suggested that the supposed effect is negligible, if any. All the results including those for PVMEMA system were interpreted in terms of the ionomer-like conformational change (ion cluster formation) of polyelectrolytes that has been often observed when the polymer charges are in rather less polar circumstances.     

Effects of the acceptor conjugation length and composition on the electrical memory characteristics of random copolyimides

Resistive‐switching memories based on copolyimides (coPIs), PI‐NTCDIX and PI‐BTCDIX , with different compositions of 4,4′‐diamino‐4″‐methyltriphenylamine ( AMTPA ), 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride, and N,N′‐bis‐(4‐aminophenyl)‐1,8:4,5‐naphthalenetetracarboxydiimide ( NTCDI ) or N,N′‐bis‐(4‐aminophenyl)‐1,2:4,5‐benzenetetracarboxydiimide ( BTCDI ) have been developed. By varying the feed ratio of monomers, PI‐NTCDIX and PI‐BTCDIX showed tunable optical and electronic properties through the charge transfer (CT) between AMTPA and NTCDI or BTCDI . The memory devices based on PI‐NTCDIX exhibited the tunable electrical bistability from the volatile dynamic random access memory to nonvolatile write once read many memory characteristics as the NTCDI composition increased. The OFF/ON electrical switching transition was mainly attributed to the CT mechanism for the charge separated high conductance, based on the analysis of model compounds and density functional theory calculation. Also, the volatility of the memory device depended on the stability of CT complex. The long conjugation and high electron affinity of the NTCDI moiety stabilized the radical anion generated in the CT complex and prevented the recombination of segregated radical species even through applying the high positive or negative voltage. On the other hand, the memory devices based on PI‐BTCDIX showed a rather unique behavior compared with those based on PI‐NTCDIX . At the low BTCDI composition, the device exhibited volatile memory property. However, no switching behavior was observed at the high BTCDI composition due to the low highest occupied molecular orbital energy level of BTCDI . Combining these results and our previous study on perylenebisimide ( PBI ), we concluded that memory characteristics could be tailored by changing the conjugation length ( PBI > NTCDI > BTCDI ) and the acceptor composition in random coPIs. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013