Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements

Optics and Spectroscopy - The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs...     

Distribution of the products of benzhydryl bromide heterolysis in the presence of triphenylverdazyl in aprotic solvents

The distribution of products of benzhydryl bromide heterolysis in the presence of triphenylverdazyl in anhydrous nitrobenzene and propylene carbonate, as well as in anhydrous acetonitrile in the presence of benzyltriethylammonium chloride was studied. In kinetic experiments the contribution of verdazyl alkylation was always minor, and verdazyl was mostly consumed in the reaction with HBr evolved during solvolysis. Thus, triphenylverdazyl is not an indicator of the solvent-separated ion pair of benzhydryl bromide.     

Reflection Spectra of Microarrays of Silicon Nanopillars

Optics and Spectroscopy - The optical-reflection spectra of microarrays of silicon nanopillars are studied in the visible and near-IR regions. The microarrays of silicon nanopillars are formed by...     

Is Triphenylverdazyl an Indicator for Solvent-Separated Ion Pair?

The hypothesis implying complete capture of solvent-separated ion pairs by triphenylverdazyls used as internal indicators for unimolecular heterolysis of organic compounds was critically analyzed. Products of heterolysis of diphenylmethyl bromide in anhydrous acetonitrile in the presence of triphenylverdazyl were identified, and their distribution was determined. Alkylation of verdazyl under kinetic conditions almost does not occur, and verdazyl is consumed as a result of its reaction with hydrogen bromide liberated during the solvolysis.     

Moment inequality for sums of multi-indexed dependent random variables

We study a real random field defined on an integer lattice. Its dependence is described by certain covariance inequalities. We obtain an upper bound of absolute moments of appropriate order for particular sums (generated by a given field) taken over finite sets of arbitrary configuration.     

Optical properties of GaN x As y P1?x?y semiconductor quaternary solid solutions

The photoluminescence method was used in the temperature range of 15?C300 K to study the optical properties of quantum-dimensional heterostructures based on GaN _x As _y P_(1?x?y) solid solutions, synthesized on the surface of a GaP (100) substrate. The calculations for the band-gap width of the GaN _x As _y P_(1?x?y) solid solution with the use of the band anticrossing model are shown to agree well with experimental data.