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Optics and Spectroscopy - The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs...  相似文献   
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Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented. It is shown that the proposed designs of the gain medium allow obtaining the effective lasing at high level of total optical losses, comparable with the typical optical losses in the vertical-cavity surface-emitting lasers. The evaluation of modal gain in different types of the gain mediummade it possible to estimate the possible frequencies of the small-signal modulation of vertically emitting lasers and proposed the ways to increase them up to 20 GHz or more.  相似文献   
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Technical Physics - A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer...  相似文献   
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Optics and Spectroscopy - An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is...  相似文献   
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Optics and Spectroscopy - The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering...  相似文献   
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Optics and Spectroscopy - A cavity scheme based on a half-ring with different radii is proposed and fabricated for 7–8 μm quantum-cascade lasers. A quantum-cascade laser with a half-ring...  相似文献   
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