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Kryzhanovskaya N. V. Dragunova A. S. Komarov S. D. Nadtochiy A. M. Gladyshev A. G. Babichev A. V. Uvarov A. V. Andryushkin V. V. Denisov D. V. Kolodeznyi E. S. Novikov I. I. Karachinsky L. Ya. Egorov A. Yu. 《Optics and Spectroscopy》2021,129(2):256-260
Optics and Spectroscopy - The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs... 相似文献
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Gladyshev A. G. Babichev A.V. Andryushkin V. V. Denisov D. V. Nevedomskii V. N. Kolodeznyi E. S. Novikov I. I. Karachinsky L. Ya. Egorov A. Yu. 《Technical Physics》2020,65(12):2047-2050
Technical Physics - A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer... 相似文献
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