EuS/Ta异质结的极大磁电阻效应

在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电阻.本文利用脉冲激光沉积方法制备了EuS/Ta异质结并研究了其电磁特性.Ta在3.6 K以下为超导态,EuS在20 K以下为铁磁态.在2 K时,EuS/Ta异质结中可观测蝴蝶型磁滞回线,证明在低磁场下(<±0.18 T)异质结中EuS铁磁态和Ta超导态共存.磁输运测试表明,通过施加外磁场可以有效调节EuS的交换场,随着交换场的增大,同时也加强了界面处的交换作用,从而抑制Ta的超导态,实现了Ta在超导态和正常态之间的转变,在EuS/Ta异质结中观测到了高达144000%的磁电阻.本文制备的EuS/Ta异质结具有极大磁电阻效应,在自旋电子学器件中有潜在的应用前景.     

镉-铽-铕-强力霉素-曲通X-100协同荧光增敏体系研究

研究了在表面活性剂TritonX 10 0存在下 ,稀土离子和部分主、副族元素的离子对Eu 强力霉素(DC)体系的协同荧光增敏效应 ,建立了Cd Tb Eu DC TritonX 10 0协同荧光增敏体系 ,并提出了一种高灵敏度测定稀土元素铕的荧光光度新方法。方法的检出限为 5 .0× 10 -11mol/L ;线性范围为 4 .0× 10 -10 ～ 4 .0× 10 -8mol/L。     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

硅基集成电路的发展和新一代栅极氧化物材料的研究现状

随着科学技术的进步和集成电路市场日益扩大的需求，硅基集成电路的集成度越来越高，而集成度的提高是以其核心器件金属氧化物半导体场效应晶体管(MOSFET)的特征尺寸逐渐减小为基础的。当栅极Si02介电层的厚度减小到原子尺度大小时，由于量子效应的影响，Si02将失去介电特性，因此必须寻找一种新的高介电常数(high—K)的氧化物材料来代替它。如今世界上许多国家都开展了替代Si02的介电氧化物材料的研究工作。文章介绍了栅极介电层厚度减小带来的影响，栅极Si02介电层的高尺氧化物材料的要求和租选，并对近期高介电常数氧化物材料的研究状况作了简要的介绍和评述。     

Observation of selective surface element substitution in FeTe_(0.5)Se_(0.5) superconductor thin film exposed to ambient air by synchrotron radiation spectroscopy

A systematic investigation of oxidation on a superconductive Fe Te_(0.5)Se_(0.5)thin film,which was grown on Nb-doped SrTiO_3(001) by pulsed laser deposition,has been carried out.The sample was exposed to ambient air for one month for oxidation.Macroscopically,the exposed specimen lost its superconductivity due to oxidation.The specimen was subjected to in situ synchrotron radiation photoelectron spectroscopy(PES) and x-ray absorption spectroscopy(XAS) measurements following cycles of annealing and argon ion etching treatments to unravel what happened in the electronic structure and composition after exposure to air.By the spectroscopic measurements,we found that the as-grown FeTe_(0.5)Se_(0.5)superconductive thin film experienced an element selective substitution reaction.The oxidation preferentially proceeds through pumping out the Te and forming Fe–O bonds by O substitution of Te.In addition,our results certify that in situ vacuum annealing and low-energy argon ion etching methods combined with spectroscopy are suitable for depth element and valence analysis of layered structure superconductor materials.