Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

基于金属圆弧孔阵列强透射的折射率传感特性

提出了一种由左右、上下对称的一大一小圆弧组成的金属圆弧孔阵列结构。利用该结构形成的法布里-珀罗腔来加强表面等离激元的耦合作用,以获得较好的强透射现象;同时研究了基于该现象的折射率传感特性。采用有限时域差分法研究了该孔阵列结构中大小圆弧孔的半径、两圆弧的圆心距和阵列周期对强透射现象的影响。研究发现,当大圆弧半径为95nm、小圆弧半径为70nm、两圆弧的圆心距为100nm、周期为425nm时,该结构具有较好的强透射现象,其灵敏度为279nm/RIU,为下一代高性能微纳米等离子体传感器的设计提供了理论参考。     

基于非对称圆形谐振腔金属-介质-金属波导结构的带阻滤波器

提出一种金属-介质-金属非对称圆形结构,该结构由两个圆形谐振腔、一个传输波导和两个耦合波导组成。利用谐振腔的局域作用加强表面等离激元的耦合作用,获得较大的透射率。采用有限时域差分方法研究了圆形谐振腔半径、个数和两圆腔中心距离对强透射特性的影响。结果表明,当非对称圆形谐振腔的半径为100nm、两圆间距为200nm时,该结构具有较高的透射率。通过优化主要参数,所设计结构的平均阻带宽度为1000nm,工作范围可增大到2500nm。     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

氮化镓单晶衬底制备技术发展与展望

氮化镓(GaN)是第三代半导体材料中的典型代表.因其良好的物理化学性能与热稳定特性,是制作光电子器件及电力电子器件的理想材料.采用同质外延技术在GaN单晶衬底上制备GaN基器件是实现其高性能的根本途径.本文综述了GaN单晶衬底制备的氢化物气相外延技术、三卤化物气相外延技术、氨热法及助熔剂法(钠流法)的研究进展,并对未来可能的发展方向提出了展望.     

可调谐交叉领结形石墨烯阵列结构等离子体折射率传感器

设计一种新颖的交叉领结形石墨烯阵列结构等离子体折射率传感器。利用石墨烯与电介质交界面产生的表面等离子体效应,在中红外波段获得双共振透射现象,结合石墨烯的电可调特性来实现透射谱的动态调制,采用时域有限差分法研究该结构中石墨烯的化学势、层数及几何参数对双共振透射现象的影响。结果表明:通过改变石墨烯的化学势及层数能够实现共振位置的调谐;优化结构参数后,该结构具有较好的传感性能和双共振透射现象,2个共振谷的灵敏度分别高达(1280±24) nm/RIU和(2800±49) nm/RIU,品质因数分别为17.1 RIU~(-1)和12.3 RIU~(-1)。研究结果为石墨烯等离子体生物传感器的设计提供了理论依据。