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经过一系列化学反应,在吡啶环上引入特丁基及甲醛基,再与2,6-二异丙基苯胺反应生成2-(N-2,6-二异丙基苯亚氨基)亚甲基-6-特丁基吡啶(g)配体,并合成了相应的配合物[NiBr2(g)](h)。配合物h的单晶结构表明其为单配体单金属结构,属于正交晶系,a=1.52776(14)nm,b=1.60846(15)nm,c=1.83777(17)nm,晶胞体积4.5160(7)nm3,Z=8。在助催化剂MAO的作用下,考察了催化乙烯聚合特性,在0℃时,所得聚合产物中包括支化聚合物和齐聚物,其中支化聚合物的分子量Mw=1.09×104,其支链大部分为甲基、丁基和长支链,支链密度为58.5。 相似文献
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经过一系列化学反应,在吡啶环上引入特丁基及甲醛基,再与2,6-二异丙基苯胺反应生成2-(N-2,6-二异丙基苯亚氨基)亚甲基-6-特丁基吡啶(g)配体,并合成了相应的配合物[NiBr2(g)](h)。配合物h的单晶结构表明其为单配体单金属结构,属于正交晶系,a=1.527 76(14)nm,b=1.608 46(15)nm,c=1.837 77(17)nm,晶胞体积4.516 0(7)nm3,Z=8。在助催化剂MAO的作用下,考察了催化乙烯聚合特性,在0℃时,所得聚合产物中包括支化聚合物和齐聚物,其中支化聚合物的分子量Mw=1.09×104,其支链大部分为甲基、丁基和长支链,支链密度为58.5。 相似文献
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In the present paper, we consider the problem ■ where β1, β2 > 0 and β1 + β2 < 1, and ? is a convex domain in Rn. The existence, uniqueness,regularity and (2-β2)/(1-β1-β2)-concavity of the positive solutions of the problem(0.1) are proven. 相似文献
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本文讨论了Bazilevic函数的两个子族的基本性质,得到了一些新的从属关系以及模,偏差,积分平均和系数的估计。这些估值多数是精确的。 相似文献
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We utilize the random network model based on phase separation scenario to simulate the conductive behaviour and anisotropic characteristics of resistivity for La2/3Ca1/3MnO3 (LCMO) thin films. The simulated results agree well with our experimental data, showing a metal-to-insulator transition from a high-T paramagnetic (PM) insulating phase to a low-T ferromagnetic (FM) metallic phase in both the untilted film deposited on a (001) SrTiO3 (STO) substrate and the tilted film grown on a vicinal cut STO substrate. It is found that the resistivity of the tilted sample is higher than that of the untilted one, displaying prominent anisotropic characteristics. The studies reveal that the tilting not only decreases the conduction of the FM domains, but also increases the activation energy of the PM regions, inducing the enhancement of resistivity. All those results suggest that the intrinsic inhomogeneity in the phase separation system plays a significant role in the electrical conductivity and the resistive anisotropy is related to the structure of the crystal lattice. 相似文献
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首先用Fourier红外吸收谱对p型掺杂的Si0.75Ge0.25/Si量子阱价带子带间跃迁的偏振特性进行了研究。实验表明TE和TM偏振光均能激发价带子带间跃迁,并在HH1→HH2跃迁中观察到很强的二向色性。同时分别在45°及垂直入射的情况下,对加有直流电场的样品进行Fourier红外电致吸收测量,首次得到样品在不同直流电场下吸收系数变化谱和折射率变化的电场依赖关系(Kerr效应)。在外电场作用下测得的较大△n(∝E2)及子带间跃迁的偏振特性表明,SiGe/Si半导体量子阱材料在焦平面阵式布列的集成线路及光电器件等应用方面具有潜在优势。 相似文献