实用型放电泵浦XeF(B-X)准分子激光器

 研制了一台实用型放电泵浦的351 nm XeF(B-X)准分子激光器,激光器采用新型开关电源、结构紧凑型张氏电极及放电火花预电离的激光腔结构,通过优化储能电容和放电电容量及比值,选取合理的工作气体压力和配比,优化了激光器性能,提高了激光器输出参数:单脉冲能量153 mJ,平均功率12.9 W,转换效率最高达到0.88%,重复频率1~80 Hz,能量不稳定度小于4%,近场光斑尺寸7 mm×22 mm。激光器已应用到常规抗蚀剂曝光的印刷电路板(PCB)激光投影成像照明系统的实验中。     

Laser-induced damage and periodic stripe structures of a CaF2 single crystal by an ArF excimer laser

The laser-induced damage threshold of a calcium fluoride(CaF2)single crystal was obtained by a 193 nm ArF excimer laser.The damage morphology of the crystal was analyzed.The results showed that the surface of CaF2 single crystal broke along the natural cleavage plane under ArF excimer laser irradiation,some fragments fell off,and Newton’s rings were observed on the curved fragments.Laser-induced periodic stripe structures(LIPSS)appeared on the surface layer beneath the fragments that peeled off.The spacing of LIPSS was measured,and the formation mechanism of LIPSS was analyzed based on the interference model.     

准分子激光全固态脉冲电源设计与实验研究

 针对脉冲能量5~8 mJ的ArF准分子激光器,设计了基于可控硅开关结合三级磁脉冲压缩开关的全固态脉冲电源,采用国产可控硅和磁开关材料,获得了上升时间约150 ns,电压10~14 kV,传递能量0.35~0.68 J的激励脉冲,并实现了对准分子激光器快放电激励。三级磁开关总效率35%,分析表明磁开关损耗较大主要原因为电容能量转移不充分、导线铜损及磁芯材料铁损较大,并提出了相应改进办法。