Implementation of quantum phase gate between two atoms via Rydberg antiblockade and adiabatic passage

Combining adiabatic passage and Rydberg antiblockade, we propose a scheme to implement a two-qubit phase gate between two Rydberg atoms. Detuning parameters between frequencies of atomic transitions and those of the corresponding driving lasers are carefully chosen to offset the blockade effect of two Rydberg atoms, so that an effective Hamiltonian,representing a single-photon detuning L-type three-level system and concluding the quantum state of two Rydberg atoms excited simultaneously, is obtained. The adiabatic-passage technique, based on the effective Hamiltonian, is adopted to implement a two-atom phase gate by using two time-dependent Rabi frequencies. Numerical simulations indicate that a high-fidelity two-qubit p-phase gate is constructed and its operation time does not have to be controlled accurately. Besides,owing to the long coherence time of the Rydberg state, the phase gate is robust against atomic spontaneous emission.     

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots(QDs) as dislocation filters by metalorganic chemical vapor deposition(MOCVD) is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10~7 cm~(-2) in the GaAs/Si sample without QDs,a density of 2×10~6 cm~(-2) is achieved in the sample with QD dislocation filters.