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一种能克服两方程湍流模型刚性的流热一体化算法 总被引:1,自引:0,他引:1
使用流热一体化算法解决传统耦合算法难于处理的流场与固体温度场耦合计算问题.为保证其计算效率,提出一个简单有效的方法用以克服两方程湍流模型刚性.给出该方法的理论证明,并验证其配合多重网格提高LUSGS隐式时间推进法的计算效率. 相似文献
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Structure Tuning of Line-Defect Waveguides Based on Silicon-on-Insulator Photonic Crystal Slabs 下载免费PDF全文
We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 μm into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a silicon- on-insulator substrate and characterize them using a t unable laser source over a wavelength range from 1510 nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant, We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides. 相似文献
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Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition 下载免费PDF全文
The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots(QDs) as dislocation filters by metalorganic chemical vapor deposition(MOCVD) is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10~7 cm~(-2) in the GaAs/Si sample without QDs,a density of 2×10~6 cm~(-2) is achieved in the sample with QD dislocation filters. 相似文献
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稀土镍基钙钛矿氧化物RNiO_3(R为稀土元素)可以在温度触发下发生从电子游离态到局域态的金属绝缘体转变,这一特性在传感器,数据存储,调制开关等方面具有可观的应用价值.本文通过脉冲激光沉积法,在钛酸锶(SrTiO_3)、铝酸镧(LaAlO_3)单晶衬底上准外延生长热力学亚稳态镍酸钐(SmNiO_3)薄膜材料,利用薄膜与衬底间晶格失配引入界面应力,实现对SmNiO_3电子轨道结构与金属绝缘体相变温度的调节.结合电输运性质与红外透射实验的综合表征研究,论证了双向拉伸应变引起的晶格双向拉伸畸变,可以引起SmNiO_3的禁带宽度的展宽,从而稳定绝缘体相并提高金属-绝缘相转变温度.进一步结合近边吸收同步辐射实验表征,揭示了拉伸应变稳定SmNiO_3绝缘体相的本质在于Ni—O成键轨道在双向拉伸形变作用下的弱化,使得镍氧八面体中的价电子偏离镍原子从而稳定SmNiO_3的低镍价态绝缘体相. 相似文献