Vertical assembly of carbon nanotubes for via interconnects

The via interconnects are key components in ultra-large scale integrated circuits(ULSI).This paper deals with a new method to create single-walled carbon nanotubes(SWNTs) via interconnects using alternating dielectrophoresis(DEP).Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition.The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%.We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.     

碳纳米管网络导电特征的导电型原子力显微镜研究

利用导电型原子力显微镜对大范围碳纳米管（CNT）网络的导电性能进行成像观察.研究发现：在几十微米的成像范围内,每根CNT本身的电阻远小于CNT之间的接触电阻,以致于在电压偏置的网络中不同的CNT呈现电位不同的等位体;CNT的导电性能虽不因与其他CNT的交叠接触而改变,但是如果缠绕成束,则半导体性CNT趋于呈现金属性CNT的导电特征. 关键词： 导电型原子力显微镜 碳纳米管网络 碳管纳米电导     

钯金属吸附对半导体性碳纳米管电输运的影响

利用物理蒸发技术,在半导体性的碳纳米管上沉积钯金属,利用导电原子力显微镜检测钯吸附对碳纳米管电输运的影响.结果表明:沉积的钯在碳纳米管上形成纳米颗粒,随着钯颗粒密度的增加,半导体性碳纳米管逐渐向金属性转变.利用第一性原理计算了吸附有钯原子的半导体性单壁碳纳米管的能带结构.研究发现,钯的覆盖率越高,其禁带宽度越窄,直至为零,定性说明了实验结果的合理性. 关键词： 单壁碳纳米管 钯纳米颗粒 导电原子力显微镜 第一性原理计算     

Enhanced etching of silicon didioxide guided by carbon nanotubes in HF solution

This paper describes a new method to create nanoscale SiO₂ pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO₂ channels can be prepared. The nanoscale SiO₂ patterns can also be created on the surface of three-dimensional (3D) SiO₂ substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO₂ has been qualitatively analysed using defects in SWNTs, combined with H₃O⁺ electric double layers around SWNTs in an HF solution.     

Efficient 1.3-μm electroluminescence from high concentration boron-diffused silicon p^＋-n junctions

Etectroluminescence peaking at 1.3 μm is observed from high concentration boron-diffused silicon p^＋-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 μm, but disappears at room temperature. The 1.3-μm band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.     

高定向热解石墨表面局域导电增强现象的扫描探针显微学研究

基于导电型原子力显微镜和扫描隧道显微镜的对比观察,研究高定向热解石墨表面上残留石墨片的导电增强现象.根据样品电阻的测量数据,将这种现象归结为导电针尖与石墨表面的点接触问题,并且发现接触电导和接触点处局域的电子密度成正比,从而确定石墨表面的局域导电增强现象的原因在于残留在石墨表面的石墨片具有较高的电子密度. 关键词： 扫描隧道显微镜 导电原子力显微镜 高定向热解石墨 导电性     

Polarization dependence of the light coupling to surface plasmons in an Ag nanoparticle & Ag nanowire system

Polarization dependence of the coupling of excitation light to surface plasmon polaritons(SPPs) was investigated in a Ag nanoparticle–nanowire waveguide system(a Ag nanoparticle attached to a Ag nanowire). It was found that under the illumination of excitation light on the nanoparticle–nanowire junction, the coupling efficiency of light to SPPs depends on the polarization of the excitation light. Theoretical simulations revealed that it is the local near-field coupling between the nanoparticle and the nanowire that enhances the incident light to excite the nanowire SPPs. Because the shapes of the Ag nanoparticles differ, the local field intensity, and thus the excitement of the nanowire SPPs, vary with the polarization of the excitation light.     

高中生物理学业自我概念和物理学业成就相关性研究

1问题的提出 1976年沙沃森（Shavelson）等提出的自我概念的多维度多层次模型，学业自我概念逐步应用到教学研究领域1983年马什（Marsh）和史密斯研究发现数学成绩与数学自我概念相关值为0．55，证明学业成就与特定的学科自我概念之间密切相关．