Au/(SiO2/Si/SiO2)纳米双势垒/n+-Si结构的电致发光研究

利用射频磁控溅射方法,在n⁺-Si衬底上淀积SiO₂/Si/SiO_{2纳米双势垒单势阱结构,其中Si层厚度为2至4nm,间隔为0.2nm,邻近n⁺-S i衬底的SiO2层厚度固定为1.5nm,另一SiO2层厚度固定为3nm.为了 对比研究,还制备了Si层厚度为零的结构,即SiO2(4.5nm)/n⁺-Si 结构.在经过600℃氮气下退火30min,正面蒸上半透明Au膜,背面也蒸Au作欧姆接触后,所 有样品都在反向偏置(n^＋-Si的电压高于Au电极的电压)下发光,而在正向偏压 下不发光.在一定的反向偏置下,电流和电致发光强度都随Si层厚度的增加而同步振荡,位 相相同.所有样品的电致发光谱都可分解为相对高度不等的中心位于2.26eV(550nm)和1.85eV (670nm)两个高斯型发光峰.分析指出该结构电致发光的机制是：反向偏压下的强电场使Au/( SiO2/Si/SiO2)纳米双势垒/n⁺-Si结构发生了雪崩击穿 ,产生大量的电子-空穴对,它们在纳米SiO2层中的发光中心(缺陷或杂质)上复 合而发光. 关键词： 电致发光 纳米双势垒 高斯型发光峰 雪崩击穿}     

Image contrast enhancement in field-emission scanning electron microscopy of single-walled carbon nanotubes

The image contrast enhancement in scanning electron microscopy of single-walled carbon nanotubes (SWNTs) on SiO₂ surfaces was experimentally investigated using a field-emission scanning electron microscope (FESEM) using a wide range of primary electron (PE) voltages. SWNT images of different contrasts were obtained at different PE voltages. Image contrast enhancement of SWNTs was investigated by charging SiO₂ surfaces at different PE voltages. The phenomena are ascribed to the surface potential difference and charge injection between SWNTs and SiO₂ substrates induced by the electron-beam irradiation.     

Facile preparation of Au/Ag bimetallic hollow nanospheres and its application in surface-enhanced Raman scattering

In this paper, an Au/Ag bimetallic hollow nanostructure was obtained by using SiO₂ nanospheres as sacrificial templates. The nanostructure was fabricated via a three steps method. SiO₂@Au nanospheres were first synthesized by the layer-by-layer technique, and then they were coated with a layer of Ag particles, finally, the Au/Ag bimetallic hollow nanospheres were obtained by dissolution of the SiO₂ core by exposure in HF solution. Several characterizations, such as transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and UV visible absorption spectroscopy were used to investigate the prepared nanostructures. The effectiveness of these Au/Ag bimetallic hollow nanospheres as substrates toward surface-enhanced Raman scattering (SERS) detection was evaluated by using rhodamine 6G (R6G) as a probe molecule. We show that such Au/Ag bimetallic hollow nanospheres structure films which consisting of larger interconnected aggregates are highly desirable as SERS substrates in terms of high Raman intensity enhancement. The Au/Ag bimetallic hollow nanostructured aggregate, interconnected nanostructured aggregate and nanoscale roughness are important factors responsible for this large SERS enhancement ability.     

多孔PMP聚合物薄膜微结构控制

将二氧化硅(SiO2)微球为模板材料分散在聚-4-甲基-1-戊烯(PMP)溶液中,通过对流自组装方法将其涂覆于基片上,经过热致相分离(TIPS)过程形成含SiO2微球模板的PMP薄膜,然后通过氢氟酸(HF)溶液腐蚀除去SiO2微球,获得了具有规则多孔结构的PMP聚合物薄膜。采用扫描电子显微镜(SEM)对含SiO2微球的PMP薄膜以及除去SiO2微球后的PMP多孔薄膜的微结构进行了表征。研究结果表明:SiO2微球在聚合物中呈有序排列,腐蚀除去SiO2微球后PMP薄膜有效复制了SiO2微球形成的有序结构,形成了有序多孔PMP薄膜。     

Improved moisture resistance of SrS:Eu phosphors with nanoscale SiO2 coating

Orange-emitting SrS:Eu²⁺ phosphors were coated with nanoscale SiO₂ and their photoluminescence (PL) degradation behavior in moist air was investigated. The SiO₂ coating was obtained by sol-gel process using diethoxydimethylsilane (DEDMS) and the coating content was varied from 0.5 to 2 wt%. The coatings were composed of a uniform, continuous, and amorphous SiO₂ layer of 30-50 nm thickness and the coating thickness was not varied significantly with the coating content. No peak shift and no decrease of PL intensity were observed after coating. The PL intensity of the coated phosphors decreased to ∼75% of the original value after 10 h exposure to moist air, while the uncoated phosphor decreased to ∼33%, which indicates the improved moisture resistance of the nanoscale SiO₂ coated SrS:Eu²⁺ phosphors.     

Si-based nanoscale SiO2 islands and light-emitting source array

A SiO₂ nanoscale island array was fabricated on a Si substrate by using anodic porous alumina as a mask. Transmission electron microscopy observation and the atomic force microscopy pattern show that the arrangement of SiO₂ islands has a quasi-hexagonal symmetry. Ge ions with a dose of 1×10¹⁷ cm^-2 were subsequently implanted into the SiO₂ island array to form Ge-related light-emitting centers. The photoluminescence (PL) spectra of as-implanted and annealed samples show three PL bands at 370, 400 and 415 nm. Their intensities reach maximums in the sample with an annealing temperature of 700 °C. Spectral analysis suggests that the 370 and 415 nm PL bands arise from Ge-Ge and Ge-Si defect centers, while the 400 nm PL is related to GeO color centers in the SiO₂ islands. The existence of these PL bands indicates the formation of a Si-based nanoscale light source array. PACS 78.55.Mb; 42.72.Bj; 68.65.+g     

Controlling growth and Raman spectra of individual suspended single-walled carbon nanotubes

Single-walled carbon nanotubes (SWNTs) were prepared with ethanol chemical vapor deposition (CVD) on SiO₂ flat and pillar-patterned Si substrates. The effect of CVD temperatures from 600 to 800 °C on SWNTs yields was investigated. By virtue of its unperturbed environment, an individual suspended SWNT grown between two different SiO₂ pillars provides a possibility to study the phonon band structure of SWNT itself at a single-nanotube level. Raman spectra of individual SWNTs grown between pillars were investigated systematically.     

Growth of single-walled carbon nanotubes on silicon nanowires

Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiO_x layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiO_x layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.     

SiO2 films fabricated by F2 laser-induced chemical deposition using silicone rubber

Silicon dioxide (SiO₂) films were selectively fabricated on a Si substrate at room temperature by illuminating both the silicone rubber target and the substrate with an F₂ laser (157 nm). The laser fluence was much less than the ablation threshold. Absorption due to absorbed water (H₂O) and hydrogen-bonded silanol (SiOH) groups were observed in addition to absorption due to Si-O-Si stretching mode in the Fourier transform infrared spectroscopy (FT-IR) spectra of the films. The illumination with higher laser fluence caused an increase of Si-O-Si/OH peak ratio in the FT-IR spectra, a decrease of etching rate in hydrofluoric acid (HF) solution, and an increase in the refractive index close to the value of a thermal SiO₂ film. These results indicate that the quality of the grown SiO₂ films was improved. The high photon energy of F₂ laser induced photodissociation of main chains and side chains of silicone and oxygen (O₂), and bonds between the ejected gaseous molecules including Si and O(¹D) to form SiO₂ films. PACS 61.80.Ba; 81.15.Fg; 82.50.Hp     

Nonlinear optical properties and phase-relaxation processes in single-walled carbon nanotubes

We have investigated third-order nonlinear optical properties of bundled and isolated semiconducting single-walled carbon nanotubes (SWNTs) by means of Z-scan method, pump-probe method, and two-beam time-resolved degenerate four-wave mixing (DFWM) method. The figures of merit Im χ⁽³⁾/α in both bundled and isolated SWNTs samples were found to be enhanced with increasing tube diameter. The measured Im χ⁽³⁾/α value in the bundled SWNTs was an order of magnitude smaller than that in the isolated SWNTs. Both population relaxation time T₁ and phase-relaxation time T₂ for bundled samples were smaller than those in the isolated samples. These experimental results can be explained by an increase in nonradiative recombination rate and phase-relaxation rate in the bundled sample. The phase-relaxation time T₂ is considered to have a significant role in the enhancement of Im χ⁽³⁾/α.     

Self-catalytic synthesis and light-emitting property of highly aligned Mn-doped Zn2SiO4 nanorods

Highly aligned Mn-doped Zn₂SiO₄ nanorods were fabricated by using a modified vapor-phase evaporation method. Their microstructure and chemical bond configurations were investigated with the help of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier-transform infrared absorption spectroscopy, and X-ray photoelectron spectroscopy. The formation process of the Mn-doped Zn₂SiO₄ nanorods can be elucidated on the basis of a self-catalytic vapor–liquid–solid growth mechanism in which Mn chloride hydrate acts as the catalyst and impurity source. Photoluminescence measurements revealed that an intensive green luminescence peak appears at 523 nm, which corresponds to the electronic transition ⁴T₁(⁴G)→⁶A₁(⁶S) of Mn²⁺ ions. Our experimental results provide a useful approach to directly fabricate Si-based nanoscale light-emitting materials using ZnO–Zn₂SiO₄ composite. PACS 81.05.-t; 81.10.Bk; 81.07.-b     

Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

HF acid attack of SiO₂ and Si₃N₄ substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO₂ and Si₃N₄ surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO₂ and Si₃N₄ layer, respectively. The linear dependence between the HF concentration and the Si₃N₄ cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO₂ layer can be explained by a combination of deep and lateral etching. The cantilever bending is discussed in terms of free surface energy, layer thickness and grain size.     

F和CH3OH多通道反应的速率常数与分支比的研究

F和CH₃OH有两个夺氢反应通道,分别生成HF+CH₃O 和HF+CH₂OH. 尽管这两个通道都没有能垒,但前一个通道即生成HF+CH₃O的反应分支比远远高于期望的统计平均值(四分之一). 不同实验测得的分支比不仅相去甚远,而且定量上与早期由过渡态理论(稳定点信息在MP2以及G2理论水平下计算得到)得到的计算结果也不符合. 此前在CCSD(T)-F12a/AVDZ水平上计算得到了121000个几何构型的能量,采用对易不变多项式结合神经网络的方法拟合得到了该体系的全维高精度势能面. 本文采用该势能面,结合准经典轨线动力学方法,对该反应的反应速率常数和反应分支比进行了理论研究,得到的结果与实验吻合. 由于反应没有能垒,理论计算结果表明反应速率常数随温度升高而有微弱的下降趋势.     

Fabrication and electrical properties of a carbon nanotube quantum dot

Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH₄) at a temperature of 900℃ on SiO₂ substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV, and the factor \alpha , which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.     

Field emission graphene–oxide–silicon field effect based photodetector

Silicon‐based devices keep moving into smaller dimension for improving the speed, efficiency, and low‐power consumption. Novel designed semiconductor device architectures are needed to overcome the physical limitations. An integration of well‐designed nanostructure and nanomaterials can potentially establish new principles and approaches to nanoelectronic and photonic devices. We herein demonstrate a graphene/SiO₂/p‐Si (GOS) heterostructure with an embedded nanoscale mesa, forming a GOS‐Mesa field‐effect photodetector. The proposed structure exhibits that multiple exciton generation (MEG) can occur in a quantum‐confined two‐dimensional electron gas (2DEG) region via impact ionization, leading to high internal quantum efficiency (η_IQE). The numerical simulation of the carrier multiplication (CM) factor in our designed structure finds a reasonable agreement with empirical data. Simulated and measured internal quantum efficiency demonstrate ～195% and ～135% of UV–Vis radiation, respectively. A vertically confined 2DEG plays an important role not only in enabling the electron emission process which is responsible for the flowing of electron current, but also in developing a highly localized electric field (up to ～10⁶ V/cm) at the SiO₂/Si interface, enabling an impact ionization process under photon energy of merely ～1.95 eV. Our findings demonstrate that carrier multiplication can be achieved in a suitably designed nanoscale structure in conjunction with nanomaterial on silicon‐based devices, providing incentive to better understand MEG within quantum wells in 2DEG systems, and being a research path to enhancing the efficiency of future solar harvesting technologies. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Enhancement of Fluorescence of Nanosized ZnO: SiO<Subscript>2</Subscript> Films in the Presence of Human Serum Albumin

The optical properties of the films of new nanosized of ZnO: SiO₂ materials with intense ultraviolet luminescence (UVL) with a maximum at 362 nm were studied. When human serum albumin (HSA) is applied on the surface of films, an effective fluorescent energy transfer occurs, which is manifested in an increase in the intensity of ultraviolet luminescence of ZnO: SiO₂. The increase in integrated UVL intensity is inversely proportional to HSA concentration; it has 9.2–12.6 times (with a decrease in the HSA concentration from 10^–8 to 10^–12 M) the UVL intensity of purified ZnO: SiO₂ film. The dependence of the UVL intensity on the HSA concentration is close to linear. Compared to the intensity at a concentration of 10–8 M, the gain is 8, 19, 31, and 36% for protein concentrations in the solution applied to the surface of ZnO: SiO₂ of 10^–9, 10^–10, 10^–11, and 10^–12 M, respectively. These supramolecular systems can be used to create biosensors and to simulate the physicochemical processes of photosynthesis. In the former case, the linear dependence of fluorescence on concentration is a significant advantage.     

A new nanoporous material based on amorphous silicon dioxide

Processes for making nanoporous SiO₂ layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length-to-diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO₂/Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching data.     

Design of a nanoscale silicon laser

The recent observation of optical gain from silicon nanocrystals embedded in SiO₂ opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon nanocrystals embedded in SiO₂ are used as the optical gain media. One design employs a SiO₂ membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity can be produced in a SiO₂ membrane using sub-wavelength structures. This photonic crystal architecture, used to guide and contain the light, can be combined with a gain medium of optically active Si nanocrystals synthesized in the SiO₂ membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO₂. Lasing action over a broad wavelength range centered at ∼770 nm should be possible in both of these configurations. Received: 20 December 2002 / Accepted: 7 January 2003 / Published online: 11 April 2003 RID="*" ID="*"Corresponding author. Fax: +1-434/982-2037, E-mail: supriya@virginia.edu     

Photoluminescence of nanostructured Zn<Subscript>2</Subscript>SiO<Subscript>4</Subscript>:Mn<Superscript>2+</Superscript> ceramics under UV and VUV excitation

The photoluminescence of Zn₂SiO₄:Mn²⁺ ceramics with a particle size of 120 ± 10 nm, which is excited in the range of 3.5–5.8 eV and subjected to synchrotron radiation with photon energies of up to 20 eV, is investigated. Nanoscale Zn₂SiO₄:Mn²⁺ ceramics possesses intense luminescence with a maximum of 2.34 eV, the position and half-width of the band are independent of the excitation energy. It is found that the photoluminescence at 2.34 eV decays nonexponentially upon ultraviolet excitation. In the case of nanoscale ceramics is irradiated by vacuum ultraviolet, an additional photoluminescence-excitation channel is likely to occur due to interaction of band states and intrinsic vacancy-like defects of the Zn₂SiO₄ matrix.     

Observing the effect of water vapor on post-irradiated surface morphology of SiO2 and Si3N4 insulators by atomic force microscopy

In this work, we investigated the effect of water-vapor treatment on the surface morphology of SiO₂ and Si₃N₄ insulators before and after Co⁶⁰ gamma-ray irradiation by using the atomic force microscopy (AFM) operated under non-contact mode. Before irradiation, no apparent surface morphology change was found in SiO₂ samples even they were water vapor treated. However, bright spots were found on post-irradiated water-vapor-treated SiO₂ sample surfaces but not on those without water-vapor treatment. We attributed the bright spots to the negative charge accumulation in the oxide due to charge balancing between hydroxyl (OH⁻) ions adsorbed on SiO₂ surface and electron-hole pairs (ehps) generated during irradiation since they can be annealed out after low temperature annealing process. On the contrary, no bright spots were observed on post-irradiated Si₃N₄ samples with and without water-vapor treatment. This result confirms that Si₃N₄ is a better water-resist passivation layer than SiO₂ layer.