BF2+注入多晶硅栅常规热退火氟迁移特性的二次离子质谱分析

借助二次离子质谱（SIMS）技术，深入地、系统地分析了80keV，2×10¹⁵ cm^-2BF₂⁺注入多晶硅栅在常规热退火条件下，F在多晶硅栅中的分布及迁移特性．F在多晶硅栅中的迁移，不但存在着扩散机制，而且还存在着发射和吸收机制，据此成功地解释了实验结果 关键词：     

BF+2注入加固硅栅PMOSFET的研究

系统地研究了BF⁺₂注入硅栅P-channel metal-oxide-semiconductor field-effect transistor(PMOSFET)阈值电压漂移与γ辐照总剂量之间的关系,深入地探讨了BF⁺₂注入抗γ辐射加固的机理.结果表明,BF⁺₂注入对硅栅P-channel metal-oxide-semiconductor(PMOS)在γ辐照下引起的阈值电     

RADIATION-INDUCED DEFECTS IN RADIATION HARD AND SOFT OXIDES

The point defects of P_b and E′ in radiation hard and soft Si-SiO₂ samples were examined using electron spin resonance (ESR). The experimental results showed that these defects were correlated with the ways of oxidation process, the dosage of ⁶⁰Co radiation and the radiation bias field. Besides, the ΔH (peak of peak) of P_b and E′ indicated that P_b is the defect with slow electron spin relaxation time while E′ is the defect with fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.     

BF+2注入加固硅栅PMOSFET的研究

系统地研究了ＢＦ＋２ 注入硅栅Ｐｃｈａｎｎｅｌ ｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒ ｆｉｅｌｄｅｆｆｅｃｔ ｔｒａｎｓｉｓｔｏｒ（ＰＭＯＳＦＥＴ） 阈值电压漂移与γ辐照总剂量之间的关系,深入地探讨了ＢＦ＋２ 注入抗γ辐射加固的机理．结果表明,ＢＦ＋２ 注入对硅栅Ｐｃｈａｎｎｅｌ ｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒ（ＰＭＯＳ） 在γ辐照下引起的阈值电压漂移具有很强的抑制作用,ＢＦ＋２ 注入加固硅栅ＰＭＯＳ 的最佳注入剂量范围为５ ×１０１４ —２ ×１０１５ ｃｍ － ２ ,分布在ＳｉＯ２／Ｓｉ 界面的Ｆ 原子抑制了γ辐照下在ＳｉＯ２／Ｓｉ 界面产生的氧化物陷阱电荷和界面陷阱电荷可能是ＢＦ＋２ 注入加固硅栅ＰＭＯＳＦＥＴ 的主要原因     

BF+2注入多晶硅栅F迁移特性的分析与模拟

在深入分析BF⁺₂注入多晶硅栅F在多晶硅栅中迁移特性的基础上，建立了F在多晶硅栅中的迁移方程.采用有限差分法，模拟了BF⁺₂注入多晶硅栅F在多晶硅栅中的分布.模拟结果与二次离子质谱(SIMS)分析结果相符.给出了80keV，2×10¹⁵cm^-2 BF⁺₂注入多晶硅栅900℃，30min退火条件下F在多晶硅中的发射系数e=6×10关键词：     

Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors （HEMTs）

Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures, we set up a radiation damage model of AlGaN/GaN high electron mobility transistor (HEMT) to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results, consistent with the experimental results, indicate that thin AlGaN barrier layer, high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT; when the acceptor concentration induced is less than 10¹⁴cm^-3, the shifts in threshold voltage are not obvious; only when the acceptor concentration induced is higher than 10¹⁶cm^-3, will the shifts of threshold voltage remarkably increase; the increase of threshold voltage, resulting from radiation induced acceptor, mainly contributes to the degradation in drain saturation current of the current--voltage (I--V) characteristic, but has no effect on the transconductance in the saturation area.