| Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors （HEMTs） |
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| 引用本文： | 范隆,郝跃,赵元富,张进城,高志远,李培咸.Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors （HEMTs）[J].中国物理 B,2009,18(7):2912-2919. |
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| 作者姓名： | 范隆 郝跃 赵元富 张进城 高志远 李培咸 |
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| 作者单位： | (1)Beijing Microelectronics Technology Institute,
Beijing
100076, China; (2)The School of Microelectronics, Xidian University, Xi'an
710071, China;Key Laboratory of Fundamental Science for National
Defense of Wide Bandgap Semiconductor Technology, Xidian University,
Xi'an 710071, China;Key Laboratory for Wide Band-gap Semiconductor Materials
and Devices of Ministry of Education,
Xidian University, Xi'an
710071, China |
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| 基金项目： | Project supported by
the National Defense Scientific and Technical Pre-Research Program
of China (Grant Nos 51311050112, 51308040301 and 51308030102), the
National Defense Fundamental Research Program of China (Grant No
A1420060156), and the National Basic Research Program of China
(Grant No 513270407). |
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| 摘 要： | Using depletion approximation theory and introducing acceptor
defects which can characterize radiation induced deep-level defects
in AlGaN/GaN heterostructures, we set up a radiation damage model of
AlGaN/GaN high electron mobility transistor (HEMT) to separately
simulate the effects of several main radiation damage mechanisms and
the complete radiation damage effect simultaneously considering the
degradation in mobility. Our calculated results, consistent with the experimental results,
indicate that thin AlGaN barrier
layer, high Al content and high doping concentration are favourable
for restraining the shifts of threshold voltage in the AlGaN/GaN
HEMT; when the acceptor concentration induced is less than
1014cm-3, the shifts in threshold voltage are not
obvious; only when the acceptor concentration induced is higher than
1016cm-3, will the shifts of threshold voltage
remarkably increase; the increase of threshold voltage, resulting
from radiation induced acceptor, mainly contributes to the
degradation in drain saturation current of the current--voltage
(I--V) characteristic, but has no effect on the transconductance
in the saturation area.
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| 关 键 词： | GaN-based high electron mobility transistor(HEMT) radiation acceptor defects |
| 收稿时间： | 2007-04-15 |
Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) |
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| Fan Long,Hao Yue,Zhao Yuan-Fu,Zhang Jin-Cheng,Gao Zhi-Yuan and Li Pei-Xian.Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)[J].Chinese Physics B,2009,18(7):2912-2919. |
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| Authors: | Fan Long Hao Yue Zhao Yuan-Fu Zhang Jin-Cheng Gao Zhi-Yuan and Li Pei-Xian |
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| Affiliation: | Beijing Microelectronics Technology Institute, Beijing 100076, China; The School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Fundamental Science for National Defense of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China |
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| Abstract: | Using depletion approximation theory and introducing acceptor
defects which can characterize radiation induced deep-level defects
in AlGaN/GaN heterostructures, we set up a radiation damage model of
AlGaN/GaN high electron mobility transistor (HEMT) to separately
simulate the effects of several main radiation damage mechanisms and
the complete radiation damage effect simultaneously considering the
degradation in mobility. Our calculated results, consistent with the experimental results,
indicate that thin AlGaN barrier
layer, high Al content and high doping concentration are favourable
for restraining the shifts of threshold voltage in the AlGaN/GaN
HEMT; when the acceptor concentration induced is less than
1014cm-3, the shifts in threshold voltage are not
obvious; only when the acceptor concentration induced is higher than
1016cm-3, will the shifts of threshold voltage
remarkably increase; the increase of threshold voltage, resulting
from radiation induced acceptor, mainly contributes to the
degradation in drain saturation current of the current--voltage
(I--V) characteristic, but has no effect on the transconductance
in the saturation area. |
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| Keywords: | GaN-based high electron mobility
transistor (HEMT) radiation acceptor defects |
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