n型掺杂PTCDA复合材料对有机发光二极管性能的提高

采用碳酸锂(Li2CO3)为n型掺杂剂,苝四甲酸二酐(3,4,9,10 perylenetetracarboxylic dianhydride,PTCDA)为母体材料,通过真空热蒸发方式制备了n型掺杂的PTCDA复合材料,将其作为电子注入材料应用到NPB/Alq3异质结有机电致发光器件中.研究发现,同LI2CO3:BC...     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

加入NPB提高P3HT:PCBM聚合物太阳能电池光伏性能

研究了在聚3-己基噻吩(P3HT)和[6,6]-苯基-C61-丁酸甲酯(PCBM)共混薄膜中加入第三组分N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4’-二胺(NPB)对器件性能的影响。实验发现:加入NPB可以促进P3HT:PCBM本体异质结的生长,进而提高器件的光伏性能,当NPB浓度为0.4mg/mL时,能量转换效率(PCE)从1.05%提高到1.64%。NPB的加入使P3HT在可见光范围内吸收增强,特别是在560nm和610nm处的吸收强度明显增大;扫描电子显微镜(SEM)研究结果表明,NPB的加入增大了P3HT与PCBM的相分离程度,提高了激子分离的几率;空穴单极性电流-电压曲线证明适量NPB的加入改善了薄膜空穴传输性能。     

方波驱动法测定Alq3的电子迁移率

在非正弦波(方波)的驱动下,观察到了OLED中Alq₃的电致发光现象。在高段方波驱动下,Alq₃中的电子向阳极移动;在低段方波驱动下,Alq₃中的电子向阴极移动。当方波的周期是电子穿过Alq₃中所用时间的2倍时,Alq₃中的电致发光现象完全消失。由此,可以计算出Alq₃中的电子迁移率,得到的结果和文献的报道值相吻合。对Alq₃中电子迁移率和厚度的关系进行了研究,从而提出了一种简单易行的计算有机材料的电子迁移率的方法。     

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride （PTCDA） doped N,N＇-di（1-naphthyl）- N,N＇-diphenylbenzidine （NPB）, has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m2, the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.     

低成本低聚合度结晶共聚物基太阳能电池

研究了一种由低聚合度的聚[2,6-(4,4-双-(2-乙基己基)-4H-环戊[2,1-b;3,4-b’]双噻吩)-交替-4,7-(2,1,3-苯并噻二唑)](LDP-PCPDTBT)、聚甲基丙烯酸甲酯(PMMA)和[6,6]-苯基-C61-丁酸甲酯(PC61BM)组成的三组分共混薄膜。通过加入溶剂添加剂1,8-二溴辛烷(DBO)进行处理,在未加入溶剂添加剂时,LDP-PCPDTBT相和PC61BM相在PMMA的基质中分别处于无定形和结晶态;应用DBO促进了LDP-PCPDTBT成分的结晶和PC61BM成分的聚集,开路电压明显提高,PMMA基质中的LDP-PCPDTBT和PC61BM的相分离尺度优化,太阳能电池的能量转换效率提高近50%。研究表明,低聚合度交替共聚物能够作为有效的给体材料,与PMMA联合使用利于降低有机太阳能电池材料的成本。     

聚合物太阳能光伏技术研究进展

聚合物太阳电池因其结构简单、成本低、重量轻和可制成柔性器件等突出优点,近年来受到广泛关注,成为发展绿色可再生能源的重要方向。聚合物太阳电池中的给体和受体光伏材料是决定器件性能的关键,本文综述了共轭聚合物给体和富勒烯受体光伏材料的最新研究进展,并在共轭聚合物给体材料中对聚噻吩衍生物以及窄带隙D-A共聚物进行了重点介绍。同时讨论了薄膜优化和器件稳定性,最后从提高电池效率的几个方面展望了聚合物太阳电池的发展方向。     

Inverted Bottom-Emission Organic Light Emitting Diode Using Two n-Doped Layers for the Enhanced Performance

We fabricate an inverted bottom-emission organic light emitting diode （IBOLED） employing two n-doped layers, i.e., 5 nm lithium carbonate doped PTCDA （1：2 Li2CO3：PTCDA） with 5 nm Li2CO3 doped BCP （1：4 Li2CO3：BCP） on top, where PTCDA and BCP stand for 3, 4, 9, 10 perylenetetracarboxylic dianhydride and bathcuporine, respectively. Compared to the IBOED using a layer of 10 nm 1：4 Li2CO3：BCP, the one utilizing the two-layer combination of 5 nm 1：2 Li2CO3：PTCDA and 5 nm 1：4 Li2CO3：BCP shows decreasing operation voltage and thereby increasing power efficiency, mainly attributed to the higher electron conductivity of 1：2 Li2CO3：PTCDA than that of 1：4 Li2CO3：BCP. The mechanism of the electron transport through the interface of 1：2 Li2CO3：PTCDA and 1：4 Li2CO3：BCP is also discussed. We provide a simply and effective structure to enhance the current conduction for IBOLEDs.     

发光层的形态结构对电致发光器件性能影响的研究

详细研究了沉积在Poly(9-vinylcarbazole)(PVK)薄膜上的8－羟基喹啉铝（Alq3）薄膜的形态结构对电致发光器件ITO／PVK／Alq3/Mg-Ag性能的影响。研究结果表明：发光层（Alq3层）的表面形貌极大地影响发光层和金属阴极的接触面积,从而影响器件的电流－电压特性。发光层的表面越均匀连续,发光层和金属阴极的接触面积就越大,通过器件的电流就越大。在三种条件的器件中,基底温度为438K时制备的Alq3薄膜所对应的器件的量子效率最高,298K制备的器件的率效次之,77K制备的器件的效率最差。     

Organic Light-Emitting Diodes with Magnesium Doped CuPc as an Efficient Electron Injection Layer

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide （ITO）/copper phthalocyanine （CuPc）/N,N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine （NPB）/Tris（8-quinolinolato） aluminum（Alq3）/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc （1：2 in weight） shows a brightness of 4312cd/m^2 and a current efficiency of 2.52cd/A, while the reference device exhibits 514 cd/m^2 and 1.25 cd/A.