气体团簇离子束两步能量修形法的平坦化效应

本文提出采用气体团簇离子束的两步能量修形法来改善4H-SiC(1000)晶片表面形貌.先用15 keV的高能Ar团簇离子进行整体修形,再用5 keV的低能团簇离子优化表面.结果表明,在相同的团簇离子剂量下,与单一15 keV的高能团簇处理相比,两步法修形后的表面具有更低的均方根粗糙度,两者分别为1.05 nm和0.78 nm.本文还以原子级平坦表面为研究对象,揭示了载能团簇引起的半球形离子损伤(弧坑)与团簇能量的关系,及两步能量修形法在弧坑修复中的优势.在原子力显微镜表征的基础上,引入了二维功率谱密度函数,以直观全面地给出材料的表面形貌特征及其随波长(频率)的分布.结果表明,经任何能量的团簇离子轰击的表面,在0.05—0.20μm波长范围内,团簇轰击都能有效地降低粗糙度,而在0.02—0.05μm范围内,则出现了粗化效应,这是由于形成了半球形离子损伤,但第二步更低能量的团簇离子处理可以削弱这种粗化效应.     

Off-stoichiometry indexation of BiFeO_3 thin film on silicon by Rutherford backscattering spectrometry

BiFeO_3 is a multiferroic material with physical properties very sensitive to its stoichiometry.BiFeO_3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing schemes.X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface morphologies.Using Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO_3 thin films annealed at 100?C–650?C.The results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO_3,whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10~(-5) A/cm~2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO_3 thin films annealed at high temperature.     

Copper ion beam emission in solid electrolyte Rb4Cu16I6.5Cl13.5

Copper ion conducting solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was prepared by means of mechano-chemical method. The structure and morphology of the powder was investigated by x-ray diffraction and scanning electron microscopy. The grain size was estimated to be 0.2-0.9 μm and the ionic conductivity at room temperature was approximately 0.206 S/cm. The solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was exploited for copper ion beam generation. The copper ion emission current of several nA was successfully obtained at acceleration voltages of 15 kV and temperature of 197 $^\circ$C in vacuum of 2.1$\times10^{-4}$ Pa. A good linear correlation between the logarithmic ion current $(\log I)$ and the square root of the acceleration voltage ($U_{\rm acc}$) at high voltage range was obtained, suggesting the Schottky emission mechanism in the process of copper ion beam generation.