气体团簇离子束装置的设计及其在表面平坦化、自组装纳米结构中的应用

根据超声膨胀原理,n(10-10^4)个气体原子可以绝热冷却后凝聚在一起形成团簇,经过离化后,形成带一个电荷量的团簇离子,比如Arn^+.当团簇离子与固体材料相互作用时,由于平均每个原子携带的能量(~eV)较低,仅作用于材料浅表面区域,因此,气体团簇离子束是材料表面改性的优良选择.本文介绍了一台由武汉大学加速器实验室自主研制的气体团簇离子束装置,包括整体构造、工作原理及实验应用.中性团簇束由金属锥形喷嘴(F=65-135μm,q=14°)形成,平均尺寸为3000 atoms/cluster,经离化后,其离子束流达到了50μA.Ar团簇离子因其反应活性较低,本文运用Ar团簇离子(平均尺寸为1000 atoms/cluster)进行了平坦化和自组装纳米结构的研究.单晶硅片经Ar团簇离子束处理后,均方根粗糙度由初始的1.92 nm降低到0.5 nm,同时观察到了束流的清洁效应.利用Ar团簇离子束的倾斜(30°-60°)轰击,在宽大平坦的单晶ZnO基片上形成了纳米波纹,而在ZnO纳米棒表面则形成了有序的纳米台阶,同时,利用二维功率谱密度函数分析了纳米结构在基片上的表面形貌和特征分布,并计算了纳米波纹的尺寸和数量.     

低速~(84)Kr~(15+,17+)离子轰击GaAs单晶

用345 keV的Kr15+和340 keV的Kr17+离子以45fi角入射n型GaAs单晶(100)面,测量了表面形貌的变化和发射的375—500 nm Ga I和Kr II的特征光谱线.Krq+(q=15,17)离子轰击后表面形貌的变化主要取决于入射离子的电荷态q.离子沉积到靶表面的能量引起Ga原子激发,其辐射光谱为Ga I 403.2 nm和Ga I 417.0 nm.入射离子中性化过程中俘获GaAs导带电子形成高激发态原子,通过级联退激填充3p,4d等空穴,P壳层电子跃迁发射谱线为Kr II 410.0 nm,Kr II 430.4 nm,Kr II 434.0 nm和Kr II 486.0 nm,Kr II486.0 nm为较强谱线.实验结果表明,入射离子与GaAs单晶相互作用发射的可见光产额与入射离子的电荷态密切相关,较高电荷态Kr17+离子入射产生的光辐射产额大约为Kr15+离子的两倍.     

原子团簇对飞秒激光的吸收

使用800nm飞秒脉冲激光研究了Xe,Ar,He等原子团簇对激光的吸收.实验结果表明,脉冲阀门的工作压力、所使用的气体种类等因素对团簇的尺寸及团簇对激光的吸收影响很大.在阀门工作压力为20×10⁵Pa、激光功率密度为1×10¹⁵W/cm²的条件下,Xe团簇对激光的吸收高达45%.激光预脉冲的存在会降低原子团簇对激光能量的吸收.离子能量测量结果表明,团簇对激光的高效吸收导致较高离子温度等离子体的生 关键词： 原子团簇 飞秒激光 能量吸收效率 高能离子     

团簇在超强超短脉冲激光场中的演化

 利用低温脉冲气阀产生氘团簇束,在SILEX-Ⅰ激光装置上开展实验,研究氘团簇在超强超短脉冲激光场中的演化过程,获得了数十keV的高能氘离子,这些氘离子的能谱分布与库仑爆炸模型计算结果一致。实验结果表明,在一定的激光功率密度条件下,团簇的平均尺度决定了释放出高能离子的能谱分布。激光辐照团簇后,通过阈上电离部分电子逃逸团簇,随着初始电离电子屏蔽作用加强,碰撞电离变成了团簇的主要电离机制。     

离子束注入对聚四氟乙烯表面改性研究

在剂量为1×1014～1×1017 ions/cm2的范围内,用能量为160 keV氮离子对PTFE表面进行注入处理,处理后的样品用可见(514.5nm)和傅立叶红外(1064 nm)喇曼(Raman)光谱以及扫描电镜进行检测.结果表明低剂量注入可导致弱C-C键的断裂,中等剂量时溅射损失效应明显,高剂量注入时微观结构强烈地变化并生成C=C双键.     

大尺寸团簇在超短超强激光场中的动力学行为

利用“流体动力学”模型分析了超短脉冲激光与团簇的相互作用机制.在共振吸收附近,等离子体球的电子密度、温度由于共振吸收加热和团簇膨胀变化非常快,仅用准静态的介电常数并不能完全描述团族在共振吸收处的物理过程.提出了有效介电常数模型,对团簇在共振吸收处的行为进行了适当的修正,并且分析了高价电离态离子和高能离子产生的机制以及不同波长激光和团簇尺寸对高价电离态离子和高能离子产生机制的影响 关键词： 超短超强激光 团簇 共振吸收 有效介电常数     

载能团簇离子的非线性辐照损伤

由于团簇离子在能量损失、二次离子发射和辐照损伤上的非线性效应,所以团簇离子与物质的相互作用倍受关注。对团簇作用的非线性效应研究不仅对于了解团簇离子与物质相互作用的机制具有十分重要的理论意义,而且载能团簇离子还有可能成为材料表面改性与分析、新功能材料的合成与研究的一种有效的新手段。因此,团簇离子与物质的相互作用成为当今国际上的研究热点之一。主要评述了载能团簇离子在物质中的非线性辐照损伤,介绍了典型的研究方法和实验结果。 Due to energetic cluster produces simultaneous impacts of several atoms and deposits extremely high energy density in a very small area, the cluster impingement on solids has produced non-linear radiation damages not presented in the collisions of individual atoms with those solids. The radiation damages are usually investigated by channeling Rutherford backscattering, Scanning Tunneling Microscope （STM）, Transmission Electronic c Microscope（TEM） and computer simulation. The typical methods and results on the non-linear radiation damages induced by clusters are reviewed in this paper.     

氨与甲醇混合团簇的多光子电离质谱及从头算研究

用多光子电离技术结合飞行时间质谱仪对氨与甲醇混合团簇进行了研究.在脉冲激光波长分别为266nm,355nm和532nm条件下,仅在355nm作用下观测到团簇离子.主要的电离产物为质子化的(CH3OH)n(NH3)mH (n=0~6,m=0~4)混合团簇离子,且各个序列的离子强度随m的增大而减小.经分析,氨与甲醇混合团簇电离后团簇离子发生内部质子化转移反应是形成质子化团簇离子的主要原因.不同尺寸团簇离子信号强度随电离激光光强变化的光强指数曲线显示,团簇均发生四光子电离过程.应用量化计算,构造了质量数较小的几个团簇离子的可能的空间几何构型,发现二元团簇离子(CH3OH)n(NH3)mH 是以NH4 作为内核离子,再通过氢键与其它分子组合而构成团簇离子.     

N+离子注入聚四氟乙烯表面改性研究

在剂量为1×1014-1×1017ions/cm2的范围内,在不同的温度条件下,用能量为160keV氮离子对PTFE表面进行注入处理,处理后的样品用可见(514.5nm)和傅里叶红外(1064nm)拉曼(Raman)光谱以及扫描电镜和x射线能谱仪进行检测.实验结果表明低剂量注入可以增强PTFE晶体结构的取向和有序性;中等剂量时溅射损失效应明显,表面粗糙度加大:高剂量注入时微观结构强烈地变化并生成CC双键,导致表面碳化.另外温度对表面改性效果有很大的影响.刻蚀率和表面的微观结构的变化随着温度的升高而增强.离子注入前,用喷射技术使样品覆盖一层150nm的金膜,薄膜的黏结性和硬度用划痕和透明胶带测试配合扫描电镜进行分析.分析结果表明,黏结性在注入剂量为10\{14\}ions/cm2时明显增强,这个结果与表面亲水性测量结果是一致的.但表面硬度只在温度为180℃时才得到了增强.     

乙腈和氨水团簇的激光电离实验研究

在355nm激光波长下应用多光子电离和分子束技术研究了乙腈和氨水的混合团簇,所得的团簇离子以(CH3CN) n、(CH3CN)nNH 3和(CH3CN)n(NH3) 为主,中性团簇以二元团簇(CH3CN)n(NH3)m/(CH3CN)n(NH4OH)m为主.离子产物是来源于中性的二元团簇先吸收部分激光能量解离成稳定的小团簇和碎片,然后再发生分子蒸发和电离的过程,并未发生明显的质子转移反应.     

Nano hillock and complex crater formation by low-energy proton implantation with incident angle into lithium niobate single crystal

The formation of nano-size hillocks and simple and complex craters was observed as a result of ion–surface collisions with a lithium niobate single crystal on proton implantation. The low-energy ion implantation process is considered as a controllable and versatile tool for surface and near-surface modifications down to an atomic scale as an alternative to the swift heavy ion irradiation effect. Lithium niobate samples implanted by proton ions with a low energy of 120 keV at various fluences (10¹⁵ and 10¹⁶ protons/cm²) were studied using atomic force microscopy (AFM). The images of surface modification appear as simple and complex crater formation in the case of incident ions at normal to the surface. Varying the angle of incidence to θ=30° with respect to the normal to the surface, hillocks and multi-hillocks were observed. The complex craters with central uplifted, cone-shaped hillocks with a height of up to 4.3 nm are surrounded by low-height (1 nm) rims. The hillock height varies from a few nanometers to 16 nm with the basal diameter from 200 to 340 nm depending on the ion implantation conditions. The complex crater and hillock formation on the lithium niobate sample surface at the collision spot with the impact of incident angle is discussed.     

氮原子、分子与团簇离子注入Si(111)的特性研究

用椭偏仪、傅氏变换红外吸收谱(FTIR)、X射线光电子能谱(XPS)以及原子力显微镜(AFM)对N⁺₁,N⁺₂,N⁺₁₀离子高剂量(1.7×10¹⁷ions/cm²)注入Si(111)的表面进行测试分析,发现三种不同尺度的离子注入后,均使Si由复折射率变化为实折射率,表面出现含氮硅键的介质层.但其表面形貌各异:N^{+关键词： 氮团簇注入 表面特性}     

二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺,利用泰勒霍普森相关相干表面轮廓粗糙度仪,研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加,二氧化锆薄膜表面粗糙度呈现出先缓慢增加,当基底的粗糙度大于10nm后呈现快速增加的趋势;随着二氧化锆薄膜厚度的增加,其表面均方根粗糙度（RMS）先减小后增大;随着辅助沉积离子能量的增加,其表面粗糙度呈现出先减小后增加的趋势。     

Ion beam smoothing of indium-containing III-V compound semiconductors

2 has been used for smoothing of rough InAs, InP, and InSb surfaces, prepared by argon ion beam etching (IBE). The evolution of the surface roughness and morphology has been studied by atomic force microscopy (AFM) as a function of the N₂ RIBE process parameters (ion beam energy, ion beam angle of incidence, and ion dose). A drastic improvement of the surface roughness has been observed for ion beam angles near normal incidence and larger than 70° with increasing ion doses. By using this technique, the initial root-mean-square (rms) roughness of, e.g., InSb of about 40 nm could be decreased to about 1 nm. Received: 20 March 1998/Accepted: 24 March 1998     

二氧化钛薄膜表面粗糙度研究

为了探究二氧化钛(TiO₂)薄膜表面粗糙度的影响因素, 利用离子束辅助沉积电子束热蒸发技术对不同基底粗糙度以及相同基底粗糙度的K9玻璃完成二氧化钛(TiO₂)光学薄膜的沉积。采用TalySurf CCI非接触式表面轮廓仪分别对镀制前基底表面粗糙度和镀制后薄膜表面粗糙度进行测量。实验表明, TiO₂薄膜表面粗糙度随着基底表面的增大而增大, 但始终小于基底表面粗糙度, 说明TiO₂薄膜具有平滑基地表面粗糙的作用; 随着沉积速率的增大, 薄膜表面粗糙度先降低后趋于平缓; 对于粗糙度为2 nm的基底, 离子束能量大小的改变影响不大, 薄膜表面粗糙度均在1.5 nm左右; 随着膜层厚度的增大, 薄膜表面粗糙度先下降后升高。     

Sputtering of amorphous ice induced by C60 and Au3 clusters

Molecular dynamics simulations were performed to study the behavior of cluster SIMS. Two predominant cluster ion beam sources, C₆₀ and Au₃, were chosen for comparison. An amorphous water ice substrate was bombarded with incident energy of 5 keV. The C₆₀ cluster was observed to shatter upon impact creating a crater of damage approximately 8 nm deep. Although Au₃ was also found to both break apart and form a damage crater, it continued along its initial trajectory causing damage roughly 10 nm deep into the sample and becoming completely imbedded. It is suggested that this difference in behavior is due to the large mass of Au relative to the substrate water molecule.     

表面状态对强流脉冲电子束辐照诱发金属表面熔坑的影响

 为了考察材料晶体学特性对表面熔坑形成机制的影响,利用强流脉冲电子束（HCPEB）对喷丸前、后的304奥氏体不锈钢进行表面辐照处理,对HCPEB诱发的表面熔坑形貌进行了详细的表征。实验结果表明,HCPEB辐照后样品表面形成了大量的火山状熔坑,熔坑数密度和熔坑尺寸随电子束能量的增加而减小,材料表面的杂质或夹杂物容易成为熔坑的核心,并在熔坑形成的喷发过程中被清除,起到净化表面的作用。此外,喷丸前、后样品表面熔坑数密度遵循相似的分布规律,喷丸处理使熔坑数密度显著增大,表明材料的晶体学特性对表面熔坑形成有重要的影响,晶界、位错等结构缺陷是熔坑形核的择优位置。     

Depth profiling of taxol-loaded poly(styrene-b-isobutylene-b-styrene) using Ga and C60 ion beams

The surface of a triblock copolymer, containing a solid-phase drug, was investigated using 15 keV Ga⁺ and 20 keV C₆₀⁺ ion beams. Overall, the results illustrate the successful use of a cluster ion beam for greatly enhancing the molecular ion and high-mass fragment ion intensities from the surface and bulk of the polymer system. The use of C₆₀⁺ also established the ability to see through common overlayers like poly(dimethyl siloxane) which was not possible using atomic ion sources. Moreover, the use of C₆₀⁺ allowed depth profiles to be obtained using primary ion dose densities in excess of 6 × 10¹⁴ C₆₀⁺/cm². Resulting sputter craters possess relatively flat bottoms without the need for sample rotation and reached depths of ca. 2 μm. AFM results illustrate the more gentile removal of surface species using cluster ions. Specifically, phase contrast and topographic images suggest the relatively high ion doses do not significantly alter the phase distribution or surface topography of the polymer. However, a slight increase in rms roughness was noticed.     

Nanostructures produced by cluster beam lithography

2 clusters with about 1000 molecules per unit charge are accelerated to up to 120 keV kinetic energy for mask projective surface bombardment. Patterning is achieved via physical as well as chemical surface erosion. Very smooth eroded surfaces result for bulk natural diamond, silicon, and glass. Polycrystalline, strongly faceted CVD diamond films are effectively planarized. Submicron structures with various wall inclinations can be generated. Atomic force microscopy of individual impact structures reveals nanometer-sized hillocks instead of craters. The collective motion of the impacted surface material is considered crucial for the cluster impact-induced nanomodifications. Atomic ion beam lithography is considered for comparison. Received: 3 July 1998