In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(～30 nm) is much thinner than before(～100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-p...     

A New Superconductor Parent Compound NaMn6Bi5 with Quasi-One-Dimensional Structure and Lower Antiferromagnetic-Like Transition Temperatures

Mn-based superconductors are very rare and their superconductivity has only been reported in three-dimensional Mn P and quasi-one-dimensional KMn₆Bi₅ and Rb Mn₆Bi₅ with[Mn₆Bi₅]^-columns under high pressures.Here we report the synthesis,magnetism,electrical resistivity,and specific heat capacity of the newly discovered quasione-dimensional Na Mn₆Bi₅.Compared with other AMn₆Bi₅ （...     

Gatemon Qubit Based on a Thin InAs-Al Hybrid Nanowire

We study a gate-tunable superconducting qubit(gatemon) based on a thin InAs-Al hybrid nanowire.Using a gate voltage to control its Josephson energy,the gatemon can reach the strong coupling regime to a microwave cavity.In the dispersive regime,we extract the energy relaxation time T₁～0.56 μs and the dephasing time T₂*～0.38 μs.Since thin In As-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zer...