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Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer 下载免费PDF全文
Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition reactor.By microwave photoconductivity decay lifetime measurements and photoluminescence measurements, the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59μs, while it is no more than 1.34μs near a triangle defect(TD). The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults.Compared with the as-grown stacking faults, the 3C-SiC polytype has a great impact on the lifetime. The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer. 相似文献
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采用紫外固化法制备了基于丙烯酸酯类水凝胶的聚合物涂层(PC),并用X射线光电子能谱(XPS)、水接触角(WCA)和原子力显微镜(AFM)分别对PC进行了化学组成和表面性能的表征.在PC表面进行了人类脂肪干细胞(h ASC)的体外长期培养扩增,得到的第3代细胞的生物学表征结果表明,干细胞在PC表面能正常黏附生长,流式细胞仪检测发现干细胞对特征标记物CD49d,CD73,CD105的阳性显性比例较高,对HLA-DR和CD31几乎不显性,说明扩增的干细胞具有h ASC特征.对PC上扩增的干细胞进行诱导分化,并用油红O、茜素红和阿利新蓝分别进行染色分析,结果表明,该干细胞保留了h ASC的多能特性:能分化为成脂、成骨和成软骨细胞.含有单体甲基丙烯酰氧乙基三甲基氯化铵(DMC)、甲基丙烯酸环己酯(CHMA)和甲基丙烯酸-2-(二乙氨基)乙酯(DEAEMA)的PC2(质量比为3∶1∶2)在用于h ASC体外长期培养时,比其它PC和TCP更有利于细胞的黏附和增殖,纯化细胞,保持其多能性.实时荧光定量PCR(RT-q PCR)的分析表明PC2上得到的细胞更容易向成骨和成软骨细胞分化. 相似文献
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建立气相分子吸收光谱法快速测定土壤中亚硝酸盐氮的方法。土壤样品采样用200 mL 1 mol/L的氯化钾溶液浸提,于20℃恒温条件下震荡60 min,静置离心。在0.5 mol/L柠檬酸+30%乙醇介质中,用气相分子吸收光谱法测定亚硝酸盐氮含量。结果显示,在0~2.0 mg/L范围内亚硝酸盐氮质量浓度与吸光度呈良好的线性关系,线性相关系数为0.999 9,方法检出限为0.010 mg/L,相对标准偏差为1.32%(n=6),样品加标回收率为93.0%~97.0%。该方法具有操作简单、分析快速准确、干扰少等优点,适用于土壤中亚硝酸盐氮的测定。 相似文献
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中国电力需求的持续增长,给资源和环境带来了巨大的压力,而经济增长及其增长方式是电力需求发生变化的原因.中国从1995年以来GDP和全社会用电量时序统计结果具有明显的非线性变化特征,因而基于非线性回归模型的GDP、电力需求、资源和环境分析,可以为解决中国电力可持续发展问题提供一个理论依据. 相似文献
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Passivation effects of phosphorus on 4H-SiC(0001) Si dangling bonds: A first-principles study 下载免费PDF全文
The effect of phosphorus passivation on 4H-SiC(0001) silicon(Si) dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phosphorus atoms at high-symmetry coordinated sites. To determine the most stable structure during the passivation process of phosphorus, a surface phase diagram of phosphorus adsorption on SiC(0001) surface is constructed over a coverage range of 1/9–1 monolayer(ML). The calculated results indicate that the 1/3 ML configuration is most energetically favorable in a reasonable environment. At this coverage, the total electron density of states demonstrates that phosphorus may effectively reduce the interface state density near the conduction band by removing 4H-SiC(0001) Si dangling bonds. It provides an atomic level insight into how phosphorus is able to reduce the near interface traps. 相似文献
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