Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer

Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition reactor.By microwave photoconductivity decay lifetime measurements and photoluminescence measurements, the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59μs, while it is no more than 1.34μs near a triangle defect(TD). The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults.Compared with the as-grown stacking faults, the 3C-SiC polytype has a great impact on the lifetime. The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer.     

蓝宝石晶体的光谱精细结构、零场分裂参量及晶体结构

运用不可约张量算法和群理论构造了C3v对称晶场中3d5组念离子的252阶可完全对角化的微扰哈密顿矩阵.用此矩阵计算了Al2O3:Fe3 晶体的光谱精细结构、零场分裂参量(D,a-F)、品体结构,其理论计算值与实验值相符合,并研究了自旋四重态、自旋二重态分别对基态能级的影响,证明了自旋四重态对基态能级的贡献是主要的,自旋二重态对基态能级的贡献虽很小,但却是不可忽略的.进一步研究了SO梢合作用、SS耦合作用对Al2O3:Fe3-品体的光谱精细结构和零场分裂参量的影响,结果发现SO耦合作用是最主要的,SS耦合作用也是不可忽略的.     

H_2S_2的构型及其异构化的量子化学研究

采用量子化学中的二阶微扰(MP2)方法,在6-311+G(3df,2p)水平上,利用Gaussian软件优化反应物,过渡态和生成物的几何结构,在相同水平上对反应物,过渡态和生成物进行了频率分析,同时完成了内禀反应坐标(IRC)分析.进而利用过渡态理论,计算了温度在300K时的H迁移异构化反应的速率常数.研究结果表明,H2S2的构型有两种,分别为:线型和分叉型,其中线型HSSH的能量较低,为稳定结构;平衡常数很小,为2.2×10-20,不利于平衡从线型向分叉型异构体转化,反之,分叉型向线型转化较容易,因此分     

LiNbO3∶Fe3+晶体的光谱精细结构、零场分裂参量及Jahn-Teller效应

应用不可约张量方法和群的理论构造了三角对称晶场中3d5组态离子的252阶可完全对角化的微扰哈密顿矩阵,利用该矩阵计算了LiNbO3∶Fe3+晶体的光谱精细结构、零场分裂、晶体结构、Jahn-Teller(J-T)效应,其理论计算值与实验值相符合,并研究了自旋四重态、自旋二重态分别对基态能级的影响,证明了自旋四重态对基态能级的贡献是主要的,自旋二重态对基态能级的贡献虽很小,但却是不可忽略的.在此基础上,进一步研究了自旋-轨道耦合作用、自旋-自旋耦合作用对LiNbO3∶Fe3+晶体的光谱精细结构和零场分裂参量的影响,发现自旋-轨道耦合作用是最主要的,自旋-自旋耦合作用也是不可忽略的. 研究表明,该种物质的四重态光谱结构中含有J-T效应. 其产生原因是自旋-轨道耦合及三角畸变的共同作用的结果,两者缺一不可.     

4H-SiC同质外延生长Grove模型研究

本文通过对4H-SiC同质外延化学反应和生长条件的分析,建立了4H-SiC同质外延生长的Grove模型,并结合实验结果进行了分析和验证.通过理论分析和实验验证,得到了外延中氢气载气流量和生长温度对4H-SiC同质外延生长速率的影响.研究表明:外延生长速率在衬底直径上为碗型分布,中心的生长速率略低于边缘的生长速率;随着载气流量的增大,生长速率由输运控制转变为反应速率控制,生长速率先增大而后逐渐降低;载气流量的增加,会使高温区会发生漂移,生长速率的理论值和实验出现一定的偏移;随着外延生长温度的升高,化学反应速率和气相转移系数都会增大,提高了外延速率;温度对外延反应速率的影响远大于对生长质量输运的影响,当温度过分升高后,外延生长会进入质量控制区;但过高的生长温度导致源气体在生长区边缘发生反应,生成固体粒子,使实际参与外延生长的粒子数减少,降低了生长速率,且固体粒子会有一定的概率落在外延层上,严重影响外延层的质量.通过调节氢气流量,衬底旋转速度和生长温度,可以有效的控制外延的生长速度和厚度的均匀性.     

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

The effect of nitric oxide(NO) annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor(MOS) devices has been investigated using the time-dependent bias stress(TDBS),capacitance–voltage(C–V),and secondary ion mass spectroscopy(SIMS).It is revealed that two main categories of charge traps,near interface oxide traps(Nniot) and oxide traps(Not),have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.     

LiNbO3∶Fe3+晶体的光谱精细结构、零场分裂参量及Jahn-Teller效应

应用不可约张量方法和群的理论构造了三角对称晶场中3d⁵组态离子的252阶可完全对角化的微扰哈密顿矩阵，利用该矩阵计算了LiNbO₃∶Fe³⁺晶体的光谱精细结构、零场分裂、晶体结构、Jahn-Teller(J-T)效应，其理论计算值与实验值相符合，并研究了自旋四重态、自旋二重态分别对基态能级的影响，证明了自旋四重态对基态能级的贡献是主要的，自旋二重态对基态能级的贡献虽很小，但却是不可忽略的.在此基础上,进一步研究了自旋-轨道耦合作用、自旋-自旋耦合作用对LiNbO₃∶Fe³⁺晶体的光谱精细结构和零场分裂参量的影响，发现自旋-轨道耦合作用是最主要的，自旋-自旋耦合作用也是不可忽略的. 研究表明，该种物质的四重态光谱结构中含有J-T效应. 其产生原因是自旋-轨道耦合及三角畸变的共同作用的结果，两者缺一不可.