| Abstract: | A novel Ga N-based vertical heterostructure field effect transistor(HFET) with nonuniform doping superjunctions(non-SJ HFET) is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance(R_(on)A) at no expense of breakdown voltage(BV).The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions(un-SJ HFET).A physically intrinsic mechanism for the nonuniform doping superjunction(non-SJ) to further reduce R_(on)A at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the R_(on)A on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in R_(on)A depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in R_(on)A could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing R_(on)A and provide a useful reference for further developing the Ga N-based vertical HFETs. |
