| Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation |
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| 引用本文： | 张梦映,胡志远,毕大炜,戴丽华,张正选.Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation[J].中国物理 B,2018(2). |
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| 作者姓名： | 张梦映 胡志远 毕大炜 戴丽华 张正选 |
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| 摘 要： | Total ionizing dose responses of different transistor geometries after being irradiated by ~(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor(nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect(RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design(TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
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