Neutron powder diffraction and high-pressure synchrotron x-ray diffraction study of tantalum nitrides

Tantalum nitride(TaN) compact with a Vickers hardness of 26 GPa is prepared by a high-pressure and hightemperature(HPHT) method. The crystal structure and atom occupations of WC-type TaN have been investigated by neutron powder diffraction, and the compressibility of WC-type TaN has been investigated by using in-situ high-pressure synchrotron x-ray diffraction. The third-order Birch–Murnaghan equation of state fitted to the x-ray diffraction pressure–volume(P–V) sets of data, collected up to 41 GPa, yields ambient pressure isothermal bulk moduli of B'_0= 369(2) GPa with pressure derivatives of B 0= 4 for the WC-type TaN. The bulk modulus of WC-type TaN is not in good agreement with the previous result(B_0= 351 GPa), which is close to the recent theoretical calculation result(B_0= 378 GPa). An analysis of the experiment results shows that crystal structure of WC-type TaN can be viewed as alternate stacking of Ta and N layers along the c direction, and the covalent Ta–N bonds between Ta and N layers along the c axis in the crystal structure play an important role in the incompressibility and hardness of WC-type TaN.     

不同材料CMOS阵列电串扰特性的分析及比较

从传感器的响应及电子扩散原理分析了影响CMOS阵列串扰特性的几个主要因素。选择了锗、硅、砷化镓这几种常见的光电材料,分析并比较了材料特性对CMOS阵列串扰特性的影响。具体分析了三种光电材料在各自光谱响应峰值波长下,不同入射条件和结构参数对应电串扰的输出情况。结果表明:在相同条件下,锗材料制作的CMOS阵列具有最大的电串扰输出,在结构条件一致的前提下,入射光的功率在200μW时,锗材料CMOS阵列的串扰比硅和砷化镓材料分别高了58.97 mV、115.81 mV。结构参数对不同材料CMOS阵列具有相同的影响规律,但是锗材料CMOS的串扰变化最为显著,在其他参数不变的情况下,耗尽层宽度为1μm时,锗材料CMOS的串扰输出比硅和砷化镓材料的分别高了56.67mV、121.84 mV。分析结果为CMOS阵列材料的选择及串扰抑制技术提供了参考数据。     

Polycrystalline cubic boron nitride prepared with cubic-hexagonal boron nitride under high pressure and high temperature

Polycrystalline cubic boron nitride(Pc BN) compacts, using the mixture of submicron cubic boron nitride(c BN) powder and hexagonal BN(h BN) powder as starting materials, were sintered at pressures of 6.5–10.0 GPa and temperature of1750℃ without additives. In this paper, the sintering behavior and mechanical properties of samples were investigated.The XRD patterns of samples reveal that single cubic phase was observed when the sintering pressure exceeded 7.5 GPa and h BN contents ranged from 20 vol.% to 24 vol.%, which is ascribed to like-internal pressure generated at grain-to-grain contact under high pressure. Transmission electron microscopy(TEM) analysis shows that after high pressure and high temperature(HPHT) treatments, the submicron c BN grains abounded with high-density nanotwins and stacking faults, and this contributed to the outstanding mechanical properties of Pc BN. The pure bulk Pc BN that was obtained at 7.7 GPa/1750℃ possessed the outstanding properties, including a high Vickers hardness(～ 61.5 GPa), thermal stability(～ 1290℃ in air),and high density(～ 3.46 g/cm~3).     

立方聚合氮(cg-N)的高温高压合成

以共价N─N单键结合的三维网状聚合氮(cg-N)是一种理想的高能量密度材料。在室温下将分子态氮加压至135.6GPa,观测到了氮的一系列"固体分子态-固体分子态"转变(β-δ-ε-ζ-η);且在不引入任何激光吸收材料的情况下,直接对红色的非晶η氮进行双面金刚石压砧激光加热,在133.9GPa、2 000K的条件下成功地合成出透明cg-N,并测量得到cg-N在134GPa附近拉曼A模频率对压力的变化率为1.56cm~(-1)/GPa。     

Exploring the compression behavior of HP-BiNbO_4 under high pressure

In the present work, a third form, the so-called HP-BiNbO_4 synthesized at high pressure and high temperature is investigated with the in-situ angle-dispersive x-ray diffraction(ADXRD) measurements under high pressure. We explore the compression behavior and phase stability of HP-BiNbO_4. The structure of HP-BiNbO_4 is first determined. The x-ray diffraction data reveal that the structure HP-BiNbO_4 is stable under pressures up to 24.1 GPa. The ADXRD data yield a bulk modulus K_o = 185(7) GPa with a pressure derivative K_o'= 2.9(0.8). Furthermore, the data are compared with those of other ABO_4 compounds. The results show that the bulk modulus of HP-BiNbO_4(about 185 GPa) is slightly higher than that of tetragonal BiVO_4 and significantly greater than those of the tungstates and molybdates.