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Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer |
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| Institution: | [1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China [2]Guangdong General Research Institute for Industrial Technology, Guangzhou 510650, China |
| Abstract: | light-emitting diodes, A1GaN/InGaN superlattice efficiency droop, numerical simulation |
| Keywords: | light-emitting diodes A1GaN/InGaN superlattice efficiency droop numerical simulation |
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