热膨胀系数和磁性可调的Mn_(0.983)CoGe/环氧树脂复合材料北大核心CSCD

为解决环氧树脂(Epoxy)热膨胀系数较大、热导率较低的问题,我们通过固相反应法制备了巨负膨胀材料Mn_(0.983)CoGe,并将不同体积分数的Mn_(0.983)CoGe粉末(平均颗粒直径~10μm)均匀分散至Epoxy中,制备成Mn_(0.983)CoGe/Epoxy复合材料.研究结果表明仅需加入体积分数为22.5vol.%的Mn_(0.983)CoGe,复合材料即在267 K^320K的温度区间内呈现近零的热膨胀系数.并且,Mn_(0.983)CoGe/Epoxy复合材料的热导率也随着Mn_(0.983)CoGe填充量的增加而显著提升.例如当复合材料中Mn_(0.983)CoGe填充量为30vol.%时,其150K处的热导率提升近3倍.此外,我们还发现,在与Epoxy复合之后,由于受到Epoxy基体产生的应力的影响,Mn_(0.983)CoGe磁结构相变温区展宽,同时六角相到正交相的转化率也显著降低.     

Epitaxial Bi2Sr2CuOy thin films as p-type transparent conductors

Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi₂Sr₂CaCu₂O_y thin films. In this study, epitaxial superconducting Bi₂Sr₂CuO_y and Bi₂Sr_1.8Nd_0.2CuO_y thin films with superior normal state conductivity are proposed as p-type transparent conductors. It is found that the Bi₂Sr_1.8Nd_0.2CuO_y thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.     

纳米脱溶相改善铋系2223银包套带材磁场下的输运性能

通过后期的氧气氛退火工艺,在Ｂｉ２２２３／Ａｇ 包套带材中引入纳米脱溶相,使得材料磁通钉扎能力显著提高,改善了输运性能．ＸＲＤ 和ＳＥＭ 分析表明退火过程中,从（Ｂｉ,Ｐｂ）２２２３ 基体晶粒内脱溶出的细小第二相粒子．钉扎力的标度表明这些细小的纳米脱溶相在材料中引入额外的钉扎中心,提高了材料的磁通钉扎能力     

纳米银掺杂对Bi(2223)超导体的影响

研究了不同含量纳米银掺杂的（Ｂｉ,Ｐｂ）２Ｓｒ２Ｃａ２Ｃｕ３Ｏｘ块材。ＤＴＡ分析表明纳米银掺杂使材料熔点降低,加速了高Ｔｃ相的形成。磁场下Ｒ－Ｔ展宽测试表明,纳米银掺杂大大提高了磁通蠕动激活能,其中最佳掺杂１５ｗｔ％Ａｇ时激活能提高５～６倍;掺杂样品的钉扎能Ｕ（Ｈ）随磁场降低比非掺杂样品要慢,改善了磁场下的传输性能。交流磁化率测量表明纳米银掺杂使晶间损耗峰向高温移动２０Ｋ,说明纳米银掺杂改善了晶界     

Deoxygenation Enhanced Double-Resistivity-Peak Properties in Polycrystalline La0.7Ca0.3Mn0.92Cr0.08O3-δ

Influences of deoxygenation on the resistivity and the magnetic properties of La0.7Ca0.3Mn0.92Cr0.08O3-δ(M =Al, Cr) are compared to understand the peculiar doping effect of chromium in the ferromagnetic manganites. It is found that the double resistivity bumps exhibited by the Cr-doped compounds can be tuned by the oxygen content. We have related the double-bump feature with the well-known inefficiency of Cr in lowering Tc, and interpreted both the features consistently in terms of large-scale phase separation. It is suggested that the largescale phase separation is a general characteristic of Cr-doped manganites, and many unusual phenomena exhibited by Cr doping are directly related to the large-scale phase separation.     

内耗测量在钙钛矿结构Mn基氧化物研究中的应用

运用内耗测量技术系统地研究了空穴型和电子型掺杂锰氧化物的相分离行为.对于La0.67Ca0.33MnO3样品,在铁磁金属区,内耗温度曲线Q-1(T)上观察到与电子相分离有关的内耗峰.此外,我们在顺磁区观察到与磁团簇形成有关的内耗峰.磁测量的结果也证明了在顺磁区Griffiths相的存在.采用内耗、电阻和杨氏模量原位测量的方法研究了La5/8-yPryCa3/8MnO3 (y=0.35) 中电流对电荷有序相的影响.较大的电流破坏了电荷有序态,导致电阻率降低,同时杨氏模量也有相应的变化.通过分析表明,在La5/8-yPryCa3/8MnO3 (y=0.35) 中存在相分离行为,即电荷有序相和铁磁金属相共存.对于电子型掺杂的Sr0.8Ce0.2MnO3和Bi0.4Ca0.6MnO3样品,通过内耗实验同样给出了相分离的证据.在外加磁场下的内耗实验表明,Sr0.8Ce0.2MnO3顺磁区的内耗峰起源于非关联的磁团簇的形成.对于电荷有序体系Bi0.4Ca0.6MnO3,由于电荷有序和电荷无序畴壁运动而导致的内耗峰被观测到.研究表明,对于空穴型和电子型掺杂锰氧化物,实验中观察到的相分离行为可能是由于MnO6八面体的Jahn-Teller畸变所导致.实验结果显示了内耗测量技术对研究强关联电子体系Mn基氧化物相分离行为是十分有效的工具.     

Nonvolatile Resistive Switching and Physical Mechanism in LaCrO_3 Thin Films

Polycrystalline LaCrO_3(LCO) thin films are deposited on Pt/Ti/SiO_2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching(RS) behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state(HRS) and low resistance state(LRS) and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current I_R and reset power P_R in the reset processes exhibit a scaling law with the resistance in LRS(R_0), which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.     

多晶Ba2FeMoO6的溶胶-凝胶制备及其结构、磁性和磁电阻效应研究

采用一种特殊的溶胶－凝胶方法制备出具有纳米尺寸晶粒的双钙钛矿结构Ba2FeMoO6多晶材料，样品的晶粒尺寸和相纯度可以通过改变烧结温度和不同的混合流动气体Ar/H2比例加以控制，对样品的电磁输运性质测量表明，在约316K处出现顺磁到铁磁的转变，并且样品从室温到低温的一个很宽的温区出现了低场磁电阻效应。     

Anomalous low-temperature heat capacity in antiperovskite compounds

The low-temperature heat capacities are studied for antiperovskite compounds AX M_3(A = Al, Ga, Cu, Ag, Sn, X = C,N, M = Mn, Fe, Co). A large peak in(C- γ T)/T~3 versus T is observed for each of a total of 18 compounds investigated,indicating an existence of low-energy phonon mode unexpected by Debye T~3 law. Such a peak is insensitive to the external magnetic field up to 80 k Oe(1 Oe = 79.5775 A·m-1). For compounds with smaller lattice constant, the peak shifts towards higher temperatures with a reduction of peak height. This abnormal peak in(C- γ T)/T~3 versus T of antiperovskite compound may result from the strongly dispersive acoustic branch due to the heavier A atoms and the optical-like mode from the dynamic rotation of X M_6 octahedron. Such a low-energy phonon mode may not contribute negatively to the normal thermal expansion in AX M_3 compounds, while it is usually concomitant with negative thermal expansion in open-structure material(e.g., ZrW_2O_8, Sc F_3).     

Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film

Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.