2MW中性束注入器抽气过程分析

一、引言 中性束注入器是要把离子源引出的高能离子转化成高能中性粒子,并输送到聚变装置中,既要提供足够的气体靶厚,以获得高效率的中性化,又要求主真空箱内的气压不超过一定的压强值,以减少再电离损失和对装置的气体负载。对于2MW这样特大的注入器,在设计过程中,不仅力图获得最大传输效率,而且要考虑到工程上的可行性和经济效益。因此,通过对抽气过程的分析计算来优化选择注入器进气方式、真空及抽气系统的各参数是必要的。     

Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.     

漂移管道中再电离损失实验

本文给出了无杂散磁场时,高能中性束经漂移管道传输途中再电离损失率的实验结果与理论值,并对有杂散磁场时的再电离率作了相应的计算。在本底气压为1.33×10~(-2)Pa情况下,能量在10—25keV范围内,测得损失率为3.3％～5.2％。