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Extrinsic Base Surface Passivation in High Speed "Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure 下载免费PDF全文
Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications. 相似文献
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研究了InP双异质结双极晶体管(DHBT)的能带结构对集电极电容的影响,解决了传统方法不能准确提取InP DHBT集电极电容的问题.考虑了基极-发射极和集电极-发射极引线间的交叠电容,并从物理上区分了InP DHBT的本征电阻、外部电阻与寄生电阻,建立了一个基于物理的InP基DHBT小信号模型.同时提出了一套直接提取模型参数的方法,该方法无需引入数学优化,具有清晰的物理意义.提取的结果在很宽的偏置范围内准确地拟合了器件特性,验证了模型的准确性与提取方法的有效性.
关键词:
InP双异质结双极晶体管
集电极电容
小信号模型
参数提取 相似文献
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Beam steering in implant defined coherently coupled vertical cavity surface emitting laser(VCSEL) arrays is simulated using the FDTD solution software. Angular deflection dependent on relative phase differences among elements, inter-element spacing, element size and emitted wavelength is analyzed detailedly and systematically.We design and fabricate 1×2 implant defined VCSEL arrays for optimum beam steering performance. Electronically controlled beam steering with a maximum deflection angle of 1.6° is successfully achieved in the 1×2 VCSEL arrays. The percentage of the power in the central lobe is above 39% when steering. The results show that the steering is controllable. Compared with other beam steering methods, the fabrication process is simple and of low cost. 相似文献
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